7C169 Search Results

C1663

Abstract: ci685 7C168 CY7C169 016A6 CY7C168 c16s1 cypress jib 4096X4
Contextual Info: MbE D ssfl^bbs Doobso? a cacYP CY7C168 7C169 ^ L / 4- i V O â •*î ^ Features a ’c y pr e ss SEMICONDUCTOR Functional Description Automatic power-down when dese­ lected 7C168 CMOS for optimum speed/power High speed — tAA = 25 ns — tACE = lSns(7C169)

7C168A

Abstract: CY7C168A CY7C169A 7C168 CY7C168A-25LMB
Contextual Info: CYPRESS SEM ICOND UC TO R MhE D ^ B 250^2 GODbSlM 5 O C V P ,7 ^ CY7C168A 7C169A <VH 'V? -O 2> CYPRESS SEMICONDUCTOR Features Automatic pow er-dow n when dese­ lected 7C168A CMOS for optimum speed/power High speed — U a = 15 n s — tACE = 10ns(7C169A)

7c169A

Contextual Info: CY7C168A 7C169A CYPRESS SEMICONDUCTOR Features • Automatic power—down when dese­ lected 7C168A • CMOS for optimum speed/power • Highspeed — tAA = 15 ns — tACE = l« n s (7C169A) • Low active power — 385 mW • Low standby power (7C168)

7C168A

Abstract: CY7C168A CY7C169A 7C169
Contextual Info: CY7C168A 7C169A 4Kx4 RAM Features Functional Description • Automatic power-down when deselected 7C168A • CMOS for optimum speed/power • High speed — tAA = 15 ns — tACE = 10 ns (7C169A) • Low active power — 385 mW • Low standby power (7C168A)

Contextual Info: 02547^3 DODQQSb 5 • 1SE D ADVANCED ELECTRONIC ~ Z $ -O S. CY7C168 7C169 CYPRESS SEMICONDUCTOR 4096 x 4 Static R/W RAM Features • Automatic power-down when deselected 7C16S • CM OS for optimum speed/ power • High Speed — 25 n* Iaa — 15 ns tACE (7C169)

Contextual Info: CY7C168 7C169 CYPRESS SEMICONDUCTOR Features Functional Description • Automatic power-down when dese­ lected 7C16S • CMOS for optimum speed/power • Highspeed — tAA = 25 ns — tACE = IS ns (7C169) • Low active power — 385 mW • Low standby power (7C168)

CY7C168A-45DMB

Abstract: 7C168A CY7C168A CY7C169A
Contextual Info: 1CY 7C16 9A CY7C168A 7C169A 4Kx4 RAM Features Functional Description • Automatic power-down when deselected 7C168A • CMOS for optimum speed/power • High speed — tAA = 15 ns — tACE = 10 ns (7C169A) • Low active power — 385 mW • Low standby power (7C168A)

cy3341

Abstract: 64K X 4 CACHE SRAM CY7C190 pasic380 cy7c189 palce22v10 programming guide palce16v8 programming algorithm STATIC RAM 6264 vhdl code for 8-bit parity checker 64x18 synchronous sram
Contextual Info: Product Selector Guide Static RAMs Organization/Density Density X1 X4 X4 SIO 7C147 2147 7C123 7C148 7C149 7C150 7C189 7C190 2148 2149 7C122 9122 93422 7C167A 7C168A 7C169A 7C170A 7C171A 7C172A 7C128A 7C187 7C164 7C166 7C161 7C162 7C185 6264 7C182 7C197 7C194

CY7C168-35PC

Abstract: 7C169 7C169-25 7C168 CY7C168-45DMB
Contextual Info: CY7C168 7C169 s? r/ SEMICONDUCTOR 4096 x 4 Static RAM Features Functional Description • Automatic power-down when dese­ lected 7C168 • CMOS for optimum speed/power • High speed — ìaa = 25 ns - t ACE = 15 ns (7C169) The CY7C168 and 7C169 arc high-per­

CY7C

Abstract: LED1014 168A4
Contextual Info: CY7C168A 7C169A 4Kx4 RAM Features Functional Description • A utom atic power-down when deselected 7C168A • CMOS fo r optim um speed/power • High speed — tAA = 1 5 n s — tACE = 10 ns (7C169A) • Low active power — 385 mW The CY7C168A and 7C169A are high-performance CMOS

Contextual Info: CY7C168 7C169 r CYPRESS SEMICONDUCTOR Functional Description Automatic power-down when dese­ lected 7C168 CMOS for optimum speed/power High speed — t*A = 25 ns — *a c e = 15 ns (7C169) Low active power — 385 mW Low standby power (7C168) — 83 mW

CY7C

Contextual Info: CY7C168A 7C169A CYPRESS SEMICONDUCTOR Features A u to m atic pow er-dow n w hen dese­ lected 7C168A C M O S fo r o p tim u m speed/pow er H igh speed — 15 n s t*A — 10 n s U c e (7C169A) low active pow er — 385 m W Low stan d b y pow er (7C168)

81c78

Abstract: 7C291 5962-8515505RX 27PC256-12 PAL164A 8464C 5C6408 72018 39C10B MACH110 cross reference
Contextual Info: Product Line Cross Reference CYPRESS 2147-35C 2147-45C 2147-45C 2147-45M+ 2147-55C 2147-55M 2148-35C 2148-35C 2148-35M 2148-45C 2148-45C 2148-45M 2148-45M+ 2148-55C 2148-55C 2148-55M 2149-35C 2149-35C 2149-35M 2149-45C 2149-45M 2149-45M 2149-55C 2149-55C 2149-55M

CY7C169

Contextual Info: CY7C168 7C169 CYPRESS SEMICONDUCTOR 4096 x 4 Static RAM Features Functional D escription • A u to m atic pow er-dow n w hen dese­ lected 7C168 T he CY7C168 and 7C169 are high-performance CMOS static RAM s organized as 4096 by 4 bits. Easy memory expansion

Contextual Info: CY7C168A 7C169A CYPRESS SEMICONDUCTOR Features • Automatic power—down when dese­ lected 7C168A • CMOS for optimum speed/power • H ighspeed — 1 \ \ = 15 ns — t A C E = 10ns(7C 169A ) • Low active power — 385 mW • Low standby power (7C168)

Contextual Info: CY7C168A 7C169A CYPRESS 4K x 4 Static RAM specified on the address pins Ao through Features Functional D escription • Automatic power-down when dese­ lected (CY7C168A The CY7C168A and 7C169A are highperform ance CM OS static RAM s orga­ nized as 4096 by 4 bits. Easy memory ex­

7C168A

Abstract: CY7C168A CY7C169A
Contextual Info: CY7C168A 7C169A ’= C Y P R ESS 4K x 4 Static RAM specified on the address pins Ao through Features Functional Description • Automatic power-down when dese­ lected (CY7C168A • CMOS for optimum speed/power • High speed The CY7C168A and 7C169A are high­

Contextual Info: ìf CY7C168A 7C169A CYPRESS 4K x 4 Static RAM Features Functional Description • Automatic power-down when dese­ lected CY7C168A T he CY7C168A and 7C169A are highperform ance CM O S static RA M s orga­ nized as 4096 by 4 bits. Easy m em ory ex­ pansion isprovidedby an active LO W chip

7C168A

Abstract: CY7C168A CY7C169A
Contextual Info: CY7C168A 7C169A ’= CYPRESS 4K x 4 Static RAM specified on the address pins Ao through Features Functional Description • Automatic power-down when dese­ lected (CY7C168A • CMOS for optimum speed/power • High speed The CY7C168A and 7C169A are highperformance CMOS static RAMs orga­

CY7C189

Abstract: CY7C190 CY7C190-25PC CY7C190-15PC CY7C189-25PC CY7C190-25DMB C1893 64-bit 16x4 ram with inverting three-state CY7C189-15DC CY7C189-15PC
Contextual Info: CY7C189 CY7C190 -F ' CYPRESS SEMICONDUCTOR Features • Fully decoded, 16 word x 4-bit high­ speed CM OS RAMs • Inverting outputs CY7C189 • Non-inverting outputs CY7C190 • High speed — 15 ns and 25 ns commercial — 25 ns (military) • Low power

27HC642

Abstract: 39C10B PAL22V10APC CY2254SC-1 7132SA70 93L422AM 7024S15 7130SA25 7C198-45C 7006S
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+

4SCE

Contextual Info: CY7C168A 7C169A CYPRESS SEMICONDUCTOR Features Automatic power-down when dese­ lected 7C168A CMOS for optimum speed/power High speed — ìaa = 15 ns — »ACE = 10 ns (7CI69A) Low active power — 385 mW Low standby power (7C168) — 83 mW TTL-compatible inputs and outputs

7C168A

Abstract: CY7C168A CY7C169A
Contextual Info: CY7C168A 7C169A 4K x 4 RAM Features D The CY7C168A and 7C169A are highĆ performance CMOS static RAMs orgaĆ nized as 4096 by 4 bits. Easy memory exĆ pansion is provided by an active LOW chip enable CE and threeĆstate drivers. The CY7C168A has an automatic powerĆdown

Contextual Info: CY7C168A 7C169A f^ Y P D T T C C 4K x 4 R/W RAM SEMICONDUCTOR Features • Automatic power-down when dese­ lected 7C168A • Capable o f w ithstanding greater than 2001V electrostatic discharge is w ritten into the m em ory location speci­ fied on the address pins (Ao through A n ).