7C172 Search Results

cy3341

Abstract: 64K X 4 CACHE SRAM CY7C190 pasic380 cy7c189 palce22v10 programming guide palce16v8 programming algorithm STATIC RAM 6264 vhdl code for 8-bit parity checker 64x18 synchronous sram
Contextual Info: Product Selector Guide Static RAMs Organization/Density Density X1 X4 X4 SIO 7C147 2147 7C123 7C148 7C149 7C150 7C189 7C190 2148 2149 7C122 9122 93422 7C167A 7C168A 7C169A 7C170A 7C171A 7C172A 7C128A 7C187 7C164 7C166 7C161 7C162 7C185 6264 7C182 7C197 7C194

CY7C171-45VC

Abstract: 7C172-35 CY7C171-35PC CY7C171-45DMB A10C CY7C171 CY7C172 7C171-25 CY7C172-35PC 2272 aq
Contextual Info: 4 bE D • 23 3 *^ 2 QDOtSBB =5 E ICYP *0VH <O -V?<y& s? CYPRESS SEMICONDUCTOR CY7C171 7C172 4096 x 4 Static R/W RAM Separate I/O R eading th e device is accom plishedby tak­ ing chip enable CE LOW, while write en­ able (W E) remains H IG H . U nder these con­

Contextual Info: CY7C171A 7C172A r^ y p p p cc Features F unctional D escription • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — tAA = 15 ns • Transparent write 7C171A • Low active power — 375 mW • Low standby power

CY7C171A

Abstract: CY7C172A
Contextual Info: CYPRESS SEMICONDUCTOR bSE J> SSÖ'ibbB GOD'iöflL» TQM CYP CY7C171A 7C172A 4K x 4 Static R/W RAM Separate I/O Features Functional Description • Automatic power-down when deselected The CY7C171A and 7C172A are highperformance CMOS static RAMs orga­

CY7C171A

Abstract: CY7C172A CY7C171A-25PC
Contextual Info: CY7C171A 7C172A CYPRESS 4K x 4 Static RAM with Separate I/O Features w ritten into the m em ory location specified on the address pins Ao through A n . Functional Description • Automatic power* down when deselected • CMOS for optimum speed/power • High speed

7C172

Contextual Info: CY7C171 7C172 CYPRESS SEMICONDUCTOR 4096 x 4 Static R/W RAM Separate I/O Features Functional Description • A u tom atic pow er-dow n w hen d esele cted T h e C Y 7C 171 and C Y 7C 1 7 2 are high-per­ form an ce C M O S static R A M s organ ized as 4096 by 4 bits w ith sep arate I/O . E asy

81c78

Abstract: 7C291 5962-8515505RX 27PC256-12 PAL164A 8464C 5C6408 72018 39C10B MACH110 cross reference
Contextual Info: Product Line Cross Reference CYPRESS 2147-35C 2147-45C 2147-45C 2147-45M+ 2147-55C 2147-55M 2148-35C 2148-35C 2148-35M 2148-45C 2148-45C 2148-45M 2148-45M+ 2148-55C 2148-55C 2148-55M 2149-35C 2149-35C 2149-35M 2149-45C 2149-45M 2149-45M 2149-55C 2149-55C 2149-55M

SOJ 24

Contextual Info: CY7C171A 7C172A r^y p p rc c SEMICONDUCTOR Features 4Kx 4 Static RAV RAM Separate I/O Reading the device is accomplished by taking chip enable CE LOW, while write enable The CY7C171A and 7C172A are high- (WE) remains HIGH. Under these condi­ performance CMOS static RAMs orga­ tions the contents of the memory location

Contextual Info: CY7C171A 7C172A CYPRESS SEMICONDUCTOR 4096 x 4 Static R/W RAM Separate I/O Features Functional Description • Autom atic power-down when deselected • CMOS for optim um speed/power • High speed T he CY7C171A and 7C172A are highperformance CMOS static RAMs orga­

MSM 6290

Abstract: msm 5562 27c256 intel 62c512 AP 2068 27C512 microchip 62256 57C256 27C512 SGS-THOMSON 27C512-150
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+

Contextual Info: CY7C171A 7C172A f^YPPF^q SEMICONDUCTOR Features Functional Description • Automatic power-down when deselected T h e C Y 7 C 1 7 1 A a n d C Y 7 C 1 7 2 A a r e hig h p e rfo rm a n c e C M O S s ta tic R A M s o r g a ­ n iz e d a s 4096 by 4 b its w ith s e p a r a te I/O .

Contextual Info: CY7C171 7C172 CYPRESS ,.= ^ = SEMICONDUCTOR Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed T he CY7C171 and 7C172 are highperform ance CM OS static RAM s orga­ nized as 4096 by 4 bits with separate I/O.

TAA 981

Abstract: CY7C171A CY7C172A
Contextual Info: CY7C171A 7C172A CYPRESS Features 4K x 4 Static RAM with Separate I/O w ritten into the m em ory location specified on the address pins Ao through A n . Functional Description • Automatic power* down when deselected • CMOS for optimum speed/power • High speed

Contextual Info: CY7C171A 7C172A CYPRESS SEMICONDUCTOR 4096 x 4 Static R/W RAM Separate I/O Features Functional Description • Automatic power-down when deselected T h e CY7C171A and 7C172A are highperform ance C M O S static R A M s orga­ nized as 4096 by 4 bits with separate I/O .

CY7C171-45VC

Abstract: CY7C171-35PC 7c172
Contextual Info: CY7C171 7C172 CYPRESS SEMICONDUCTOR Features Functional Description • Automatic power-down when deselected T h e CY7C171 and 7C172 are highperform ance CM OS static RAM s orga­ nized as 4096 by 4 hits with separate I/O. Easy memory expansion is provided by an

27HC642

Abstract: 39C10B PAL22V10APC CY2254SC-1 7132SA70 93L422AM 7024S15 7130SA25 7C198-45C 7006S
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+

P13AB

Abstract: 7C171A
Contextual Info: Features • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — tAA = 15 ns • Transparent write 7C171A • Low active power — 375 mW • Low standby power — 93 mW • TTL-eompatible inputs and outputs • Capable of withstanding greater than

Contextual Info: CY7C171A 7C172A 0CYPRESS Features 4K x 4 Static RAM with Separate I/O w ritten into the m em ory location specified on the address pins Ao through A n . Functional Description • Automatic power-down when deselected T he CY7C171A and 7C172A are highperform ance CM OS static RAM s orga­

CY7C171A

Abstract: CY7C172A
Contextual Info: CY7C171A 7C172A 4K x 4 Static RAM with Separate I/O Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — tAA = 15 ns • Transparent write 7C171A • Low active power — 375 mW • Low standby power

Contextual Info: CY7C171A 7C172A CYPRESS SEMICONDUCTOR Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed —- tAA = IS ns • Itansparent write 7C171A • Low active power — 375 mW • Low standby power

CY7C171A

Abstract: CY7C172A K73 Package
Contextual Info: 4bE D 256=1^2 GGGbSBT T ESCYP ' CYPRESS SEMICONDUCTOR T 7 c f f a l 5 - G CY7C171A 7C172A 8 4096 x 4 Static R/W RAM Separate I/O Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • Highspeed — tAl\ = 15 ns

7c17

Abstract: CY7C171A CY7C172A C171A
Contextual Info: 1CY 7C17 2A CY7C171A 7C172A 4K x 4 Static RAM with Separate I/O Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — tAA = 15 ns • Transparent write 7C171A • Low active power — 375 mW

Contextual Info: CY7C171A 7C172A CYPRESS F e a tu re s 4K x 4 Static RAM with Separate I/O written into the m emory location specified on the address pins A<> through A n . F u n c tio n a l D escrip tio n • Automatic power-down when deselected • CMOS for optimum speed/power

CY7C171-45DMB

Abstract: CY7C171-45LC
Contextual Info: CY7C171 7C172 CYPRESS SEMICONDUCTOR 4096 x 4 Static R/W RAM Separate I/O Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power The CY7C171 and 7C172 are high-performance CMOS static RAMs organized as