7TBM42 Search Results

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7Tbm42 GD12174 71b «SflG K N-CHANNEL POWER MOSFETS IRF620/621/622/623 FEATURES • • • • • • • Lower R d s ON Improved Inductive ruggedness Fast switching times R ugged polysilicon gate cell structure Lower input capacitance

km41c1001

Contextual Info: SAMSUNG SEMICONDUCTOR INC S3E D • 7Tbm42 KM41C1001A CMOS DRAM T '4 -6 '5 1 3 - 1 M x 1 Bit Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: tcAc tnc 70ns 20ns 130ns KM41C1001A- 8 80ns 20ns 150ns KM41C1001A-10 100ns 25ns 180ns

R0310

Abstract: 64KX4 samsung CMOS SRAM 28-pin SOJ SRAM
Contextual Info: I SAMSUNG ELECTRONICS INC b?E D m 7Tbm42 KM 64258B 00175fc.b Ö2T SI1GK CM OS SRAM 6 4 K X 4 Bit High-Speed CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast Access Tim e: 15, 20, 25ns (max.) • Low Power Dissipation Standby (TTL) : 40m A (m ax.)

ka7309

Abstract: TI 81W CAMERA 803 CMOS sync timing generator T3D 77 KS7214 78235 T3D 91 oil temperature sensor generator
Contextual Info: KS7214 Timing & SYNC. Generator for B/W CCD GENERAL DESCRIPTION KS7214 is Timing control IC for generating timing signal & sync signal which required camera system using monochrome CCD Image sensor. FUNCTIONS - EIA/CCIR STANDARDS TIMING MODE - HI-BAND/ NORMAL TIMING MODE

250M

Abstract: IRFS820 IRFS821
Contextual Info: N-CHANNEL POWER MOSFETS IRFS820/821 FEATURES TQ-220F • Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

Contextual Info: KM641001A CMOS SRAM 256K x 4 Bit With ÜE High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES The KM641001A is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words • Fast Access Time 15,17,20 ns(Max.) • Low Power Dissipation

Contextual Info: SAMSUNG ELECTRONICS INC m 4SE D 7 % H 1 4 2 000=1011 b • " T V'?>1 - VS> MJD30/30C PHP EPITAXIAL SILICON TRANSÌSTOR GENERAL PURPOSE AMPLIFIER. LOW SPEED SWITCHING APPLICATIONS. D-PACK FOR SURFACE MOUNT APPLICATIONS • Lead Formed or Surface Mount Applications (No Suffix

Contextual Info: S A MS UN G E L E C T R O N I C S INC b?E ]> 7^142 CMOS VIDEO RAM KM428C128 1 2 8 K X 8 Bit CMOS Video RAM FEATURES • Dual port A rchitecture 128K X 8 bits RAM port 256 X 8 bits SAM port • Performance RAM access tim e tRAC • • • • • • •

Contextual Info: DRAM MODULE KMM364E213BK/BS KMM364E213BK/BS Fast Page with EDO Mode 2Mx64 DRAM DIMM based on 2Mx8, 2K Refresh, 5V G ENERAL DESCRIPTION FEATURES The Samsung KMM364E213B is a 2M bit x 64 Dynamic RAM high density memory module. The • Part Identification Samsung KMM364E213B consists of eight CMOS

SSH60N06

Contextual Info: SA M S UN G E L E C T R O N I C S INC b4E ]> 7^4142 SSH60N06/60N10 FEATURES • • • • • • • • GG 15 4b S 45b « S M Ò K N-CHANNEL POWER MOSFETS TO-3P Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

Contextual Info: DRAM MODULE KMM372F213BK/BS KMM372F213BK/BS Fast Page with EDO Mode 2Mx72 DRAM DIMM with ECC, 2K Refresh, 3.3V G E N E R A L DESCRIPTION FEA T U R ES The Samsung KMM372F213B is a 2M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372F213B consists of nine CMOS

ADC CCIR 601

Abstract: Solid state CCIR ca 151 KS0122-S aexo chroma 175 ic CCIR601 KS0119 KS0122 multi S-Video Input
Contextual Info: KS0122 Data Sheet MULTIMEDIA VIDEO MULTISTANDARD VIDEO DECODER The KS0122 converts analog NTSC or PAL video in composite or S-video format to digitized component video. Output data can be selected for CCIR 601 or square pixel sample rates in either YUV or RGB formats. All required

U420

Abstract: ic 74148 74148 IC IRFR420 16-4 74148 IRFR422 irfr520 74148 free irfu420 of ic 74148
Contextual Info: SAM S UN G E L E C T R O N I C S INC b7E ]> • 7Tbm4B IRFR420/422 IRFU420/422 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • DD17Pbfi TST ■ SMGK D-PACK Lower R d s o n Improved inductive ruggedness Fast switching times Rugged poiysilicon gate cell structure

HMR-11000

Abstract: HMR11000
Contextual Info: SAMSUNG ELECTRONICS INC O HARRIS bOE D 7^4145 OGlliaO ^ 05 HMR-11000 GaAs MMIC Attenuator DC-18 GHz PRODUCT DATA Features Applications * Low VSWR • Gain Control * Ultra Low Power Consumption • Temperature Compensation * Voltage Controlled Impedence • SPST Switching

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 DDlSSSfl 171 I KM41C4000B SUGK CMOS DRAM 4 M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4000B is a high speed CMOS 4,194,304 x 1 Dynamic Random Access Memory. Its de­

Contextual Info: KM64BV4002 CMOS SRAM 1Mx4Bit With /OE High-Speed BiCMOS Static RAM (3.3V Operating) FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max) • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS): 30 mA(Max.) Operating KM64BV4002J-12:160mA(Max.)

Contextual Info: KSR2105 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching Circuit, Inverter, Interlace circuit Driver circuit • Built in bias Resistor (R,=4.7K1), R2=10Kfl) • Complement to KSR1105 ABSOLUTE MAXIMUM RATINGS (Ta=25°C )

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7TL,4m2 DDlbSSb TT3 « S M C K KM424C257 CMOS VIDEO RAM 256K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port * Perform ance The Samsung K M 4 2 4 C 2 5 7 is a CMOS 2 5 6 K X 4 bit Dual

Contextual Info: KM44C1003C/CL/CSL CMOS DRAM 1M x4B it CMOS Quad CAS RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tR A C tC A C tR C KM44C1003C/CIVCSL-5 50ns 13ns 90ns KM44Ú1003C/CL/CSL-6 60ns 15ns 110ns KM44C1003C/CL/CSL-7 70ns 20ns 130ns KM44C1003C/CL/CSL-8

Contextual Info: KM416C1000BJ CMOS DRAM ELECTRONICS 1Mx16Bit CMOS Dynamic RAM with Fast Page Mode D ESC R IPT IO N This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

Contextual Info: KM44C4005BS CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Extended Data Out Mode DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.

44C160

Contextual Info: KM44C16004A, KM44C16104A CMOS DRAM 1 6 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 16,777,216 x 4 bit Extended Data Out M ode CM O S DRAMs. Extended Data O ut Mode offers high speed random access of m em ory cells w ithin the sam e row. Refresh cycle 4K Ref. o r 8K Ref. ,

KS57C5016

Contextual Info: K S57C 5016 4-BIT CMOS Microcontroller ELECTRONICS Product Specification OVERVIEW The KS57C5016 single-chip CMOS microcontroller is designed for high performance using Samsung's newest 4-bit CPU core and the SAM4 product development approach Samsung Arrangeable Microcontrollers . With its

Jzc 40F

Contextual Info: CMOS DIGITAL INTEGRATED CIRCUIT KS0066 DOT MATRIX LCD CONTROLLER & DRIVER The K S0066 is a dot matrix LCD driver & controller LSI which is fabricated by low power CMOS technology FUNCTION • Character type dot matrix LCD driver & controller • Internal driver: 16 common and 40 segment signal output.