SMD16A Search Results

SMD16AGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SMD16AGP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 60 Volts CURRENT 1.0 Ampere FEATURES * * * * * * For surface mounted applications Metal silicon junction, majority carrier conduction Low power loss, high efficiency

marking 255

Abstract: SMD16APT SOD-123S
Contextual Info: CHENMKO ENTERPRISE CO.,LTD SMD16APT SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 60 Volts CURRENT 1.0 Ampere FEATURES * * * * * * For surface mounted applications Metal silicon junction, majority carrier conduction Low power loss, high efficiency

SMD-16A

Abstract: SDC09 SMD16A TRANSISTOR SMD 1a 9 power transistor array
Contextual Info: Surface-mount Power Transistor Array SDC09 ICBO IEBO VCEO hFE VCE sat VFEC Es/b Test Conditions VCB = 60V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA IFEC = 6A L = 10mH, single pulse Ratings 10max 10max 60 to 70 400 to 1500 0.15max 1.5max 80min

SDK06

Abstract: SMD-16A 3602 equivalent
Contextual Info: Surface-mount MOS FET Array SDK06 under development Ciss Coss Crss t d (on) tr t d (off) tf VSD VDS = 10V f = 1.0MHz VGS = 0V ID = 1A VDD 12V RL = 12Ω VGS = 5V RG1 = 50Ω, RG2 = 10kΩ ISD = 1A, VGS = 0V 52 1.0 1.0 1.8 0.2 0.25 200 120 20 2.0 7.4 3.3

MN638S

Abstract: STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M
Contextual Info: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein

SMA2409M

Abstract: MN638S SSD103 SPF3004 sta464c spf0001 spf7211 relay Re 04501 sta509a SLA2402M
Contextual Info: 注意 ●本書に記載されている内容は改良などにより予告なく変更することがあります。 ご使用の際には最新の情報であることをご確認ください。 ●本書に記載されている動作例及び回路例は、使用上の参考として示したもので、

alternator rectifier diode 50a

Abstract: EL 14v 4c STA509A equivalent sta509a smd diode marking A05 CTB-34M HALL SENSOR A 22L GENERAL SEMICONDUCTOR MARKING mJ SMA ED TRANSISTOR SMD MARKING CODE 12w Zener diode smd marking code 22h
Contextual Info: Bulletin No C01EA0 Jun., 1999 DEVICES for AUTOMOTIVE CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein

SDK06

Contextual Info: Surface-mount MOS FET Array SDK06 RDS ON Ciss Coss Crss t d (on) tr t d (off) tf VSD • ID — VDS Characteristics 52 1.0 1.0 57 ±1.0 100 2.5 1.8 0.2 0.25 200 120 20 VDS = 10V f = 1.0MHz VGS = 0V ID = 1A VDD 12V RL = 12Ω VGS = 5V RG1 = 50Ω, RG2 = 10kΩ

SDK08

Contextual Info: Surface-mount MOS FET Array SDK08 RDS ON Ciss Coss Crss t d (on) tr t d (off) tf VSD VDS = 10V f = 1.0MHz VGS = 0V ID = 4A VDD 12V RL = 3Ω VGS = 5V RG = 50Ω ISD = 6A, VGS = 0V 1.3 5.0 1.8 9.0 0.07 0.09 700 300 90 50 80 60 40 1.0 ±100 100 2.3 13.0 0.08

SDA03

Contextual Info: Surface-mount Power Transistor Array SDA03 External Dimensions SMD-16A VBB1 V 10 VBB2 (V) –5 IB1 (mA) –50 IB2 (mA) 50 t on (µs) 0.4 t stg (µs) 1.75 9 a b Pin 1 tf (µs) 0.22 8 20.0max ±0.2 19.56 1.4±0.2 IC (A) 1 +0.15 0.3 –0.05 4.0max RL (Ω)

SDA04

Abstract: 632 ic
Contextual Info: Surface-mount Power Transistor Array SDA04 Electrical Characteristics External Dimensions SMD-16A VBB1 V 10 VBB2 (V) –5 IB1 (mA) –50 IB2 (mA) 50 t on (µs) 0.4 t stg (µs) 1.75 tf (µs) 0.22 9 a b Pin 1 8 20.0max 19.56±0.2 1.4±0.2 IC (A) 1 +0.15 0.3 –0.05

SMD16A

Abstract: SDK06
Contextual Info: Surface-mount MOS FET Array SDK06 under development RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD VDS = 10V f = 1.0MHz VGS = 0V ID = 1A VDD 12V RL = 12Ω VGS = 5V RG1 = 50Ω, RG2 = 10kΩ ISD = 1A, VGS = 0V 47 52 1.0 1.0 1.8 0.2 0.25 200 120 20

overcurrent circuit protection

Abstract: SDH04 smd vb VB 6 PIN SMD PZ SMD transistor
Contextual Info: Surface-mount Dual Circuit High-side Power Switch Array SDH04 +0.15 0.75 –0.05 +0.15 a b Pin 1 Power supply voltage VB –13 to +40 V Drive terminal applied voltage VD –0.3 to VB V Input terminal voltage VIN –0.3 to +7.0 V DIAG output applied voltage

TRANSISTOR SMD 1a 9

Abstract: SDC09 smd transistor 142 SMD-16A
Contextual Info: Surface-mount Power Transistor Array SDC09 ICBO IEBO VCEO hFE VCE sat VFEC Es/b Test Conditions VCB = 60V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA IFEC = 6A L = 10mH, single pulse Ratings 10max 10max 60 to 70 400 to 1500 0.15max 1.5max 80min

SDK08

Abstract: MOS FET Array
Contextual Info: Surface-mount MOS FET Array SDK08 VDS = 10V f = 1.0MHz VGS = 0V ID = 4A VDD 12V RL = 3Ω VGS = 5V RG = 50Ω ISD = 6A, VGS = 0V 50 80 60 40 1.0 1.5 2.54±0.25 0.89±0.15 0.25 +0.15 0.75 –0.05 16 9 a 6.8max 1.8 9.0 0.07 0.09 700 300 90 V nA µA V S Ω Ω

Contextual Info: Surface-mount Power Transistor Array SDA04 External Dimensions SMD-16A VBB1 V –10 VBB2 (V) 5 IB1 (mA) –50 +0.15 0.3 –0.05 IB2 (mA) 50 t on (µs) 0.4 t stg (µs) 1.75 tf (µs) 0.22 b Pin 1 8 20.0max ±0.2 19.56 1.4±0.2 IC (A) –1 9 a 6.8max V 4.0max

w342

Abstract: SDC09
Contextual Info: Surface-mount Power Transistor Array SDC09 External Dimensions SMD-16A 0.89±0.15 0.25 2.54±0.25 +0.15 0.75 –0.05 16 V V mJ 9 a 6.8max ICBO IEBO VCEO hFE VCE sat VFEC Es/b (Ta=25ºC) Unit µA µA V Ratings 10max 10max 60 to 70 400 to 1500 0.15max 1.5max

Transistor Vb

Abstract: SDH04
Contextual Info: High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SDH04 External Dimensions unit: mm Features 1.0 ±0.3 ● Built-in diagnostic function to detect short and open circuiting of loads and output status signals ● Low saturation PNP transistor use

2am smd transistor

Abstract: transistor smd 4z HALL SENSOR A 22L 78Mos EL 14v 4c 78 MOS GENERAL SEMICONDUCTOR MARKING mJ SMA ED smd transistor marking 12W TRANSISTOR SMD MARKING CODE 1P TRANSISTOR SMD MARK CODE 7a
Contextual Info: High-side Power Switch with Diagnostic Function SI-5155S External Dimensions unit: mm ● Built-in diagnostic function to detect short and open circuiting of loads and output status signals ● Low saturation PNP transistor use ● Allows direct driving using LS-TTL and C-MOS logic levels

s10p40

Abstract: C53l SS34 sma SS54 smb K4 SOD SK24 equivalent SK34 smc diode s14L SSM14APT SSM5819SLPT
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking PLASTIC MATERIAL USED CARRIES UL 94V-0 Maximum Maximum Maximum Reverse Forward Forward Peak Equivalent Current Voltage Surge Current Outline Circuit @ 25°C TA @ 25°C TA @ 8.3mS NO. Diagram IR IFM Surge

SDH04

Contextual Info: High-side Power Switch ICs [Surface-mount 2-circuits] SDH04 +0.15 0.75 –0.05 +0.15 b Power supply voltage VB –13 to +40 V Drive terminal applied voltage VD –0.3 to VB V VIN –0.3 to +7.0 V DIAG output applied voltage VDIAG –0.3 to +7.0 V DIAG output source current

SDK09

Contextual Info: Surface-mount MOS FET Array SDK09 under development • ID — VDS Characteristics 0.15 0.2 400 130 30 VDS=10V f=1.0MHz VGS=0V ID=4A VDD=12V RL=3Ω VGS=5V RG=50Ω 100 300 250 200 1.0 ISD=6A, VGS=0V V µA µA V S 0.2 0.25 Ω ■ ID — VGS Characteristics

SMA2409M

Abstract: spf 9001 sanken mn638s SPF0001 SPF3004 SPF3006 relay Re 04501 Ignition ICs SPF7211 ssd103
Contextual Info: SANKEN ELECTRIC CO.,LTD. CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein

SDK08

Abstract: 12v 16A diagram
Contextual Info: Surface-mount MOS FET Array SDK08 RDS ON Ciss Coss Crss t d (on) tr t d (off) tf VSD VDS = 10V f = 1.0MHz VGS = 0V ID = 4A VDD 12V RL = 3Ω VGS = 5V RG = 50Ω ISD = 6A, VGS = 0V 1.3 5.0 1.8 9.0 0.07 0.09 700 300 90 50 80 60 40 1.0 ±100 100 2.3 13.0 0.08