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    Bourns Inc BDT61C-S

    TRANS DARLINGTON NPN 120V 4A 3PIN TO-220 - Tape and Reel (Alt: BDT61C-S)
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    Avnet Americas BDT61C-S Reel 30,000
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    pi BDT61C

    NPN SILICON POWER DARLINGTON Power Bipolar Transistor, 4A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
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    ComSIT USA BDT61C 45
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    BDT61C Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BDT61C Bourns NPN SILICON POWER DARLINGTONS Original PDF
    BDT61C Philips Semiconductors Silicon Darlington Power Transistor Original PDF
    BDT61C Power Innovations NPN SILICON POWER DARLINGTONS Original PDF
    BDT61C Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    BDT61C Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDT61C Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDT61C Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BDT61C Philips Semiconductors SILICON DARLINGTON POWER TRANSISTORS Scan PDF
    BDT61CF Philips Semiconductors Silicon Darlington Power Transistor Original PDF
    BDT61CF Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDT61CF Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BDT61CF Philips Semiconductors SILICON DARLINGTON POWER TRANSISTORS Scan PDF
    BDT61C-S Bourns NPN DARLINGTON 120V 4A Original PDF

    BDT61C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BDT60

    Abstract: BDT60C BDT60A BDT60B BDT61 BDT61A BDT61B BDT61C
    Text: BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● AUGUST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C TO-220 PACKAGE TOP VIEW ● 50 W at 25°C Case Temperature


    Original     		PDF BDT60, BDT60A, BDT60B, BDT60C BDT61, BDT61A, BDT61B BDT61C O-220 BDT60 BDT60 BDT60C BDT60A BDT60B BDT61 BDT61A BDT61C

    BDT60C

    Abstract: BDT61A BDT60 BDT60A BDT60B BDT61 BDT61B BDT61C
    Text: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A TO-220 PACKAGE


    Original     		PDF BDT61, BDT61A, BDT61B, BDT61C BDT60, BDT60A, BDT60B BDT60C O-220 BDT61B BDT60C BDT61A BDT60 BDT60A BDT61 BDT61B BDT61C

    Untitled

    Abstract: No abstract text available
    Text: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A This series is obsolete and


    Original     		PDF BDT61, BDT61A, BDT61B, BDT61C BDT60, BDT60A, BDT60B BDT60C O-220 BDT61

    Untitled

    Abstract: No abstract text available
    Text: BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A This series is currently available, but


    Original     		PDF BDT60, BDT60A, BDT60B, BDT60C BDT61, BDT61A, BDT61B BDT61C O-220 BDT60

    TCS-11

    Abstract: BDT60 BDT60A BDT60B BDT60C BDT61 BDT61A BDT61B BDT61C
    Text: BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A TO-220 PACKAGE


    Original     		PDF BDT60, BDT60A, BDT60B, BDT60C BDT61, BDT61A, BDT61B BDT61C O-220 BDT60B TCS-11 BDT60 BDT60A BDT60B BDT60C BDT61 BDT61A BDT61C

    Untitled

    Abstract: No abstract text available
    Text: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A TO-220 PACKAGE


    Original     		PDF BDT61, BDT61A, BDT61B, BDT61C BDT60, BDT60A, BDT60B BDT60C O-220 BDT61

    Untitled

    Abstract: No abstract text available
    Text: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A This series is currently available, but


    Original     		PDF BDT61, BDT61A, BDT61B, BDT61C BDT60, BDT60A, BDT60B BDT60C O-220 BDT61

    Untitled

    Abstract: No abstract text available
    Text: BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A This series is obsolete and


    Original     		PDF BDT60, BDT60A, BDT60B, BDT60C BDT61, BDT61A, BDT61B BDT61C O-220 BDT60

    BDT60C

    Abstract: BDT60 BDT60A BDT60B BDT61 BDT61A BDT61B BDT61C
    Text: BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A TO-220 PACKAGE


    Original     		PDF BDT60, BDT60A, BDT60B, BDT60C BDT61, BDT61A, BDT61B BDT61C O-220 BDT60B BDT60C BDT60 BDT60A BDT60B BDT61 BDT61A BDT61C

    sas110

    Abstract: 750-AT-1 BDT60 BDT60A BDT60B BDT60C BDT61 BDT61A BDT61B BDT61C
    Text: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● AUGUST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C TO-220 PACKAGE TOP VIEW ● 50 W at 25°C Case Temperature


    Original     		PDF BDT61, BDT61A, BDT61B, BDT61C BDT60, BDT60A, BDT60B BDT60C O-220 BDT61 sas110 750-AT-1 BDT60 BDT60A BDT60C BDT61 BDT61A BDT61B BDT61C

    BDT61

    Abstract: BDT60C BDT61C BDT60 BDT60A BDT60B BDT61A BDT61B
    Text: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A TO-220 PACKAGE


    Original     		PDF BDT61, BDT61A, BDT61B, BDT61C BDT60, BDT60A, BDT60B BDT60C O-220 BDT61B BDT61 BDT60C BDT61C BDT60 BDT60A BDT61A BDT61B

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original     		PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


    Original     		PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original     		PDF MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar

    T2D 22 diode

    Abstract: T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode
    Text: BDT60;60A BDT60B;60C y v SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit fo r audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. QUICK REFERENCE DATA


    OCR Scan     		PDF BDT60 BDT60B BDT61, BDT61A, BDT61B BDT61C. BDT60 T2D 22 diode T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode

    BDT60

    Abstract: kia 494 BDT60B BDT61 BDT61A BDT61B BDT61C transistor 2TH transistor d 1991 ar
    Text: BDT60;60A BDT60B;60C J ^ SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. QUICK REFERENCE DATA


    OCR Scan     		PDF BDT60 BDT60B BDT61, BDT61A, BDT61B BDT61C. O-220. 0D34bb7 kia 494 BDT61 BDT61A BDT61C transistor 2TH transistor d 1991 ar

    Untitled

    Abstract: No abstract text available
    Text: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • AUG UST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C T0-220 PACKAGE TOP VIEW • 50 W at 25°C Case Temperature


    OCR Scan     		PDF BDT61, BDT61A, BDT61B, BDT61C BDT60, BDT60A, BDT60B BDT60C T0-220 BDT61

    BDT618

    Abstract: BDT60C ST BDT60C BOT61
    Text: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK_ • Designed for Complementary Use with BDT60, BOT6OA, BDT60B and BDT60C • 50 W at 2S°C Case Temperature • 4 A Continuous Collector Current


    OCR Scan     		PDF BDT61, BDT61A, BDT61B, BDT61C BDT60, BDT60B BDT60C O-220 8DT61 BDT61A BDT618 BDT60C ST BOT61

    Untitled

    Abstract: No abstract text available
    Text: BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • AUG UST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C T 0 -2 2 0 PACKAGE TOP VIEW • 50 W at 25°C Case Temperature


    OCR Scan     		PDF BDT60, BDT60A, BDT60B, BDT60C BDT61, BDT61A, BDT61B BDT61C BDT60 BDT60A

    3DT60

    Abstract: BDT61 BDT60 BDT60A BDT60B BDT60C BDT61B BDT61C BDV64
    Text: c 2S5SS12 BDT60 , BDT60 A, BDT60 B, BDT60 C PNP SILICON POWER DARLINGTONS r f ï ï i ïI it ui • .IM I TO-220 PACKAGE TOP VIEW Designed for Complementary Use with BDT61, BDT61 A, BDT61B and BDT61C o B C 50 W at 25°C Case Temperature 4 A Continuous Collector Current


    OCR Scan     		PDF T0-220 BDT61, BDT61 BDT61B BDT61C BDT60, BDT60A, BDT60B, BDT60C BDT60 3DT60 BDT60A BDT60B BDT60C BDT61C BDV64

    BDT60C ST

    Abstract: BDT60C
    Text: BDTBO, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARUNGTONS Copyright 1997, Powet Innovations Limited, UK_ A U G U S T 1993 - R E V IS E D M A R C H 1997 • Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C • 50 W at 25°C Case Temperature


    OCR Scan     		PDF BDT60A, BDT60B, BDT60C BDT61, BDT61A, BDT61B BDT61C T0-220 BDT60 BDT60A BDT60C ST

    Untitled

    Abstract: No abstract text available
    Text: BDT60F; BDT60AF BDT60BF; BDT60CF _z PHILIPS INTERNATIONAL SbE D • 7110flSb 0043212 77fl ■ P H I N SILICON DARLINGTON POWER TRANSISTORS T~3 PNP silicon power transistors in a monolithic Darlington circuit and housed in a SOT186 envelope with an electrically insulated mounting base.


    OCR Scan     		PDF BDT60F; BDT60AF BDT60BF; BDT60CF 7110flSb OT186 BDT61F, BDT61AF, BDT61BF BDT61CF.

    BF 331 TRANSISTORS

    Abstract: bdt60bf
    Text: BDT60F; BDT60AF BDT60BF; BDT60CF SILICON DARLINGTON POWER TRANSISTORS PNP silicon power transistors in a monolithic Darlington circuit and housed in a SOT 186 envelope with an electrically insulated mounting base. They are recommended for applications such as audio output stages and general purpose amplifiers.


    OCR Scan     		PDF BDT60F; BDT60AF BDT60BF; BDT60CF BDT61F, BDT61AF, BDT61BF BDT61CF. BDT60F BF 331 TRANSISTORS bdt60bf