KMM5361000B Search Results
KMM5361000B Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: KM M5361000B1 /B1G DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5361000B1 is a 1M bits x 36 Dynamic RAM KMM5361000B1-6 tR A C tcA c tn c 60ns 15ns 110ns high density memory module. The Sam sung |
OCR Scan |
M5361000B1 KMM5361000B1 KMM5361000B1 KMM5361000B1-6 KMM5361000B1-7 KMM5361000B1-8 110ns 130ns 150ns 20-pin | |
Contextual Info: S A M S U N G E L E C T R O N I C S INC b7 E D • 7 Tb4142 KMM5361000B/BG 0015150 SGÖ H i S M G K DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KMM5361000B is a 1M bits x 36 Dynam ic RAM high density memory module. The Samsung |
OCR Scan |
Tb4142 KMM5361000B/BG KMM5361000B 20-pin 72-pin 110ns KMM5361000B-7 130ns | |
Contextual Info: b7E D SAMSUNG ELECTRONICS INC • 7^143 KMM5361000BH G G 1 5 1 3 4 ADI I SMGK DRAM MODULES 1Mx36 DRAM SIMM Memory Module This SIMM is the x 36 built on x 40 board FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5361000BH is a 1M b itsx3 6 Dynamic |
OCR Scan |
KMM5361000BH 1Mx36 KMM5361000BH 20-pin 72-pin 22jiF KMM5361000BH-6 110ns KMM5361000BH-7 | |
0015142Contextual Info: SAMSUNG ELECTRONICS INC b 7 E ]> • DDS I SHGK 7 *b4 1 4 E D 0 1 5 1 4 0 KMM5361000B2/B2G DRAM MODULES 1M x36 DRAM SIM M Memory Module FEATURES GENERAL DESCRIPTION Perform ance range: tRAC tcAC tRC KM M5361000B2-6 60ns 15ns 110ns KMM5361000B2-7 70ns 20ns |
OCR Scan |
KMM5361000B2/B2G M5361000B2-6 110ns KMM5361000B2-7 130ns M5361000B2-8 150ns M5361000B2 5361000B2 20-pin 0015142 | |
Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7Sb4142 0014517 721 KMM5361000B1/B1G DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: • • • • • • • tRAC tcAC tra KMM5361000B1-6 60ns 15ns 110ns KMM5361000B1-7 |
OCR Scan |
7Sb4142 KMM5361000B1/B1G 110ns KMM5361000B1-7 130ns KMM5361000B1-8 KMM5361000B1 20-pin | |
Contextual Info: SAMSUNG ELECTRONICS INC b?E T> WM T T b m M E KMM5361OOOBV/BVG 0015122 GTT • SMGK DRAM MODULES 1Mx36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KMM5361000BV is a 1M bitsx36 Dynamic RA M high density memory module. The Samsung |
OCR Scan |
KMM5361OOOBV/BVG 1Mx36 KMM5361000BV bitsx36 20-pin 72-pin KMM5361000BV-7 130ns 5361OOOBV-8 | |
KMM5361000B-7
Abstract: kmm5361000b7 Q334
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OCR Scan |
KMM5361000B/BG KMM5361000B-6 KMM5361000B-7 KMM5361000B-8 130ns 150ns KMM5361000B 20-pin kmm5361000b7 Q334 | |
30 pin simm
Abstract: 30-pin SIMM RAM 30 pin simm memory 256KX8 SIMM 512KX40 1 x 32 72-pin SIMM KMM581020BN 72 simm function KMM5362000 30-pin SIMM
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OCR Scan |
KMM58256CN KMM59256CN KMM532256CV/CVG KMM536256C/CG KMM32512CV/CVG KMM536512C/CG KMM536512CH KMM540512C/CG' KMM540512CM KMM581000C 30 pin simm 30-pin SIMM RAM 30 pin simm memory 256KX8 SIMM 512KX40 1 x 32 72-pin SIMM KMM581020BN 72 simm function KMM5362000 30-pin SIMM | |
KM424C256Z
Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
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OCR Scan |
KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C464P KM424C256Z KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ | |
KMM591000AN
Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
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OCR Scan |
KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P KMM591000AN KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble | |
AG10
Abstract: km416c256 1m maskrom KM68B1002-10
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OCR Scan |
KM41C4000A-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-7 KM41C4000AL-8 KM41C4000AL-10 KM41C4000ASL-7 KM41C4000ASL-8 KM41C4000ASL-10 KM41C4001A-7 AG10 km416c256 1m maskrom KM68B1002-10 |