LH5116N Search Results

LH5116NA-10F

Abstract: 13B1 LH5116NA
Contextual Info: PRODUCT SPECIFICATION Integrated Circuits Group LH5116NA-10F 16K SRAM Model Number: LH5116NC Spec. Issue Date: Oct. 22, 2004 Spec No: EL16X148 SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE. Suggested applications (if any) are for standard use; See Important Restrictions for limitations on special applications. See Limited

lh5116na

Abstract: 13B1
Contextual Info: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH5116NA-10FE 16K Static RAM Model Number: LH5116N9 Spec. Issue Date: October 8, 2004 Spec No: EL16X048 SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE. Suggested applications (if any) are for standard use; See Important Restrictions for limitations on special applications. See Limited

7326

Abstract: 13B1 LH5116NA SHARP
Contextual Info: LH5116NA sharp 2 LH5116NA sharp 3 LH5116NA sharp 4 LH5116NA sharp 5 LH5116NA sharp 6 LH5116NA sharp 7 LH5116NA sharp 8 LH5116NA sharp 9 LH5116NA sharp 10 LH5116NA 11 LH5116NA 12 LH5116NA sharp 13 SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE. Suggested applications if any are for standard use; See Important Restrictions for limitations on special applications. See Limited

Contextual Info: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH5116NA-10FE Flash Memory 16K Static RAM Model Number: LH5116N9 Spec. Issue Date: October 8, 2004 Spec No: EL16X048 SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE. Suggested applications (if any) are for standard use; See Important Restrictions for limitations on special applications. See Limited

24S0P

Contextual Info: Search Europe SME SHARP Microelectronics Europe LH5116NA - 10F Sales and Technical Information Product Groups System Solutions Support Product Overview 5V SRAM Product Discontinued, refer to Where to Buy PCN Press Room PRODUCT DETAIL INFORMATION Jobs About Us

LH5116H

Contextual Info: LH5116/H C M O S 16K 2 K x 8 S tatic RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5116/H are static RAMs organized a s 2 ,0 4 8 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode

Contextual Info: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5116/H are static RAMs organized as2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tee).

LH28F640BFHE-PBTLDY

Abstract: lh28f320s5hns-zp LH28F160S5T-L70A LH28F016 LH28F008SAT-ZW lh5116na-10 LH28F640BFHE-PBTL90 LH5164A-10L LH5164AN-80L lh5116-10
Contextual Info: Product Change Notice PCN : Lead (Pb)–free Packages October 15, 2004 This document updates PCN: ST-03-Z-06E issued January 23, 2004. Objective: Existing Memory ICs are changing from a lead (Pb) process to a lead-free process. Process Change Key Points 1) SHARP is changing the lead plating process from lead (Pb) to lead-free to meet the demands

Contextual Info: LH5116 FEATURES • 2,048 x 8 bit organization • Access time: 100 ns MAX. • Power consumption: Operating: 220 mW (MAX.) Standby: 5.5 nW (MAX.) CMOS 16K (2K x 8) Static RAM DESCRIPTION The LH5116 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process

5116 ram

Abstract: LH5116H DIP024-P-0600 SOP024-P-0450B 0450b
Contextual Info: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 × 8 bit organization The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE).

LH5160N

Abstract: LH5115 LH5118D LH5160 LH5160D LH521000 LH5167 LH52252A LH5114H LH5911-55
Contextual Info: NOV 0 5 1990 L H 5 9 1 1 /L H 5 9 1 2 /L H 5 9 1 4 2K x 8 CMOS Dual Port RAM Preliminary Data Sheet Features Functional Description The IH 5911, LH5912 and LH5914are dual port static RAMs that use true dual port memory cells to allow each port to independently access any location in memory.

LH5116H

Contextual Info: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 × 8 bit organization The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE).

Contextual Info: LH5116 FEATURES • 2,048 x 8 bit organization • Access time: 100 ns MAX. • Power consumption: CMOS 16K (2K x 8) Static RAM DESCRIPTION The LH5116 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode

lh5116na-10

Abstract: LH5116N
Contextual Info: SHARP CORP blE D m LH5116 ÜOOtî t 7fl b3b «SRPJ CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization • Access time: 100 ns (MAX.) The LH5116 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process

0450B

Abstract: 5116d
Contextual Info: LH5116/H CMOS 16K 2K X 8 Static RAM FEATURES DESCRIPTION • 2,048 The LH5116/H are static RAMs organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (t0E).

lh5116na-10

Contextual Info: LH5116 CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5116 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate C M O S process technology. It features high speed access in read mode using output enable (toe).

5116 ram

Abstract: LH5116H LH5116HN
Contextual Info: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 × 8 bit organization The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE).

LH5116N

Contextual Info: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 The LH5116/H are static RAMs organized as2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tee).

Contextual Info: L H 5 1 1 6 / H CMOS 16K 2K x 8 S ta tic RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5116/H are static RAMs organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode

lh28f800bvhe-tv85

Abstract: LH28F128BFHED LH28F128BFHED-PWTL90 LH28F160S5HNS-L70 LH5116H-10 LH28F160S3HNS-L10 lh28f128bfht-pw LH28F320S5HNS-L90 LH28F008BJT-BTLZ1 Product Selector Guide
Contextual Info: Memory Product Selector Guide SYMMETRICAL FLASH DENSITY PRODUCT FAMILY ORG. PART NUMBER PACKAGE READ VOLTAGE PROGRAM VOLTAGE LH28F008SCT-L85 LH28F008SCHT-L85 LH28F008SCT-L12 3 V or 5 V 40TSOP LH28F008SAT-85 5V LH28F008SAHT-85 8M Cobra x8 3 V, 5 V or 12 V

Contextual Info: LH5116 FEATURES CMOS 16K 2K x 8 Static RAM DESCRIPTION • 2,048 • Access time: 100 ns (M AX.) The LH5116 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode

LH28F128SPHTD-PTL12

Abstract: 56TSOP lh28f800bvhe-tv85 lh5116h10 LH28F320SKTD-L70 LRS1826A TV85 LH28F008SC LH28F160S5T-L70A LH52256CHN-70LL
Contextual Info: Memory Product Selector Guide 8M AND 16M SYMMETRICAL FLASH DENSITY ORG. PART NUMBER PACKAGE READ VOLTAGE PROGRAM VOLTAGE LH28F008SCT-L85 LH28F008SCHT-L85 LH28F008SCT-L12 3 V or 5 V 40TSOP LH28F008SAT-85 x8 85 I 120 C 85 C 85 I 85 C 120 C 12 V LH28F008SCN-L85

LH5116NA-10F

Abstract: LH5116D-10F LH5116H-10F
Contextual Info: Product Change Notification Type of Notification: Product Discontinuation ISSUE DATE LAST BUY DATE NOTIFICATION NO. LAST SHIP DATE June 15, 2005 Dec 30, 2005 20050615-1 March 31, 2006 This notification advises you that the following product s have been discontinued.