LH5116HN Search Results

LH5116H

Contextual Info: LH5116/H C M O S 16K 2 K x 8 S tatic RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5116/H are static RAMs organized a s 2 ,0 4 8 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode

Contextual Info: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5116/H are static RAMs organized as2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tee).

Contextual Info: LH5116 FEATURES • 2,048 x 8 bit organization • Access time: 100 ns MAX. • Power consumption: Operating: 220 mW (MAX.) Standby: 5.5 nW (MAX.) CMOS 16K (2K x 8) Static RAM DESCRIPTION The LH5116 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process

5116 ram

Abstract: LH5116H DIP024-P-0600 SOP024-P-0450B 0450b
Contextual Info: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 × 8 bit organization The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE).

LH5116H

Contextual Info: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 × 8 bit organization The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE).

Contextual Info: LH5116 FEATURES • 2,048 x 8 bit organization • Access time: 100 ns MAX. • Power consumption: CMOS 16K (2K x 8) Static RAM DESCRIPTION The LH5116 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode

lh5116na-10

Abstract: LH5116N
Contextual Info: SHARP CORP blE D m LH5116 ÜOOtî t 7fl b3b «SRPJ CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization • Access time: 100 ns (MAX.) The LH5116 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process

0450B

Abstract: 5116d
Contextual Info: LH5116/H CMOS 16K 2K X 8 Static RAM FEATURES DESCRIPTION • 2,048 The LH5116/H are static RAMs organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (t0E).

lh5116na-10

Contextual Info: LH5116 CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5116 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate C M O S process technology. It features high speed access in read mode using output enable (toe).

5116 ram

Abstract: LH5116H LH5116HN
Contextual Info: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 × 8 bit organization The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE).

LH5116N

Contextual Info: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 The LH5116/H are static RAMs organized as2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tee).

Contextual Info: L H 5 1 1 6 / H CMOS 16K 2K x 8 S ta tic RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5116/H are static RAMs organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode

lh28f800bvhe-tv85

Abstract: LH28F128BFHED LH28F128BFHED-PWTL90 LH28F160S5HNS-L70 LH5116H-10 LH28F160S3HNS-L10 lh28f128bfht-pw LH28F320S5HNS-L90 LH28F008BJT-BTLZ1 Product Selector Guide
Contextual Info: Memory Product Selector Guide SYMMETRICAL FLASH DENSITY PRODUCT FAMILY ORG. PART NUMBER PACKAGE READ VOLTAGE PROGRAM VOLTAGE LH28F008SCT-L85 LH28F008SCHT-L85 LH28F008SCT-L12 3 V or 5 V 40TSOP LH28F008SAT-85 5V LH28F008SAHT-85 8M Cobra x8 3 V, 5 V or 12 V

Contextual Info: LH5116 FEATURES CMOS 16K 2K x 8 Static RAM DESCRIPTION • 2,048 • Access time: 100 ns (M AX.) The LH5116 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode