MGFK25V4045 Search Results

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK25V4045 1 4 .0 — 14.5G H z BAND 0 .3 W INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F K 2 5 V 4 0 4 5 is an in te rn a lly im pedance m atched GaA s p o w e r F E T especially designed fo r use in 1 4 .0 ~ 1 4 .5

Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK25V4045 14.0 – 14.5 GHz BAND / 0.3W DESCRIPTION The MGFK25V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: Ku B A N D IN T ERN A LLY M A T C H E D G aA s FET MGFKxxVxxxx Series T y p ic a l C h a ra c te ristic s Type M G FK35V2228 MGFK3SV2732 MGFK38V2228 MGFK38V2732 MGFK25V4045 MGFK30V404S MGFK33V4045 MGFK35V4045 MGFK37V4045 MGFK41V404S PidB dBm GlP f (dB) (GH z )

MGFK25V4045

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK25V4045 14.0 ~ 14.5GHz BAND 0.3W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC

MGFK25V4045

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> IVIGFK25V404514.0-14.5GHz BAND 0.3W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFK25V4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0-14.5 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK25V4045 14.0 – 14.5 GHz BAND / 0.3W DESCRIPTION The MGFK25V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic

MGFK37V4045

Contextual Info: Ku BAND INTERNALLY MATCHED GaAs FET MGFKxxVxxxx Series Typical Characteristics P ld i dBm G lp (dB) f (GHz) MGFK35V2228 3 5 .5 7 .0 1 2 .2 - 1 2 .8 •'nBQ« 3 5 .5 7 .0 1 2 .7 - 1 3 .2 3 8 .0 6 .0 3 8 .0 Type 3*» M Q fK a n r^ S MGFK38V2732 MGFK25V4045 *

MGF2430A

Abstract: MGF4714AP MGF4914D MGF4919 MGF1402B MGF2430 MGF1923 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> APPLICATION NOTE RECOMMENDED LINE-UP FOR LOW NOISE DEVICES APPLICATION NOTE 1. Recommended Line-Up 1.1 Line-up for 12G Hz Band Converter W G - M IC CO NVERTER RF AM P 1ST STAGE M IX E R 2N D S T A G E IF A M P 3R D S T A G E

C42V5964

Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
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