NE8500100 Search Results

UM 3842

Abstract: NE8500100 NE8500199 76600 FS S12 2 23178
Contextual Info: PRELIMINARY DATA SHEET C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199 ABSOLUTE MAXIMUM RATINGS1 FEATURES TC = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 1 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 9.0 dB VDS Drain to Source Voltage

NE8500100

Abstract: NE8500199 UM 3842 7486 gate
Contextual Info: C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199 ABSOLUTE MAXIMUM RATINGS1 FEATURES TC = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 1 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 9.0 dB VDS Drain to Source Voltage • HIGH EFFICIENCY: 37% (PAE)

Nec K 872

Abstract: NE85001 NE8500100 NE8500100-RG NE8500100-WB NE8500199
Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE85001 SERIES 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package.

NEC 1357

Abstract: Nec K 872
Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE85001 SERIES 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package.

Contextual Info: PRELIMINARY DATASHEET C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199 ABSOLUTE MAXIMUM RATINGS1 FEATURES_ Tc = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 1 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 9.0 dB V ds

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE85001 SERIES 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET D E S C R IP T IO N The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package.

Contextual Info: PRELIMINARY DATA SHEET C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199 FEATURES_ ABSOLUTE MAXIMUM RATINGS1 Tc = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 1 W SYMBOLS • HIGH LINEAR GAIN: 9.0 dB PARAMETERS UNITS RATINGS

ne900075

Abstract: NE9000
Contextual Info: X and Ku-Band Internally Matched GaAs Devices Typical Specifications @ Tc = 25°C Uiwartty Linear Power Added PidB Gain Efficiency1 V d s dBm (dB) (% ) (V) Pmt P out e w w m tf Dootm^ni (A) IMS (dBc) (V) (A) Package Style NEZ1414-2E 14 to 14.5 34.0 7,5 27

NE85001

Abstract: NE8500100 NE8500100-RG NE8500100-WB NE8500199
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Contextual Info: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17

NE8500100

Abstract: NE850R599
Contextual Info: PRELIMINARY DATA SHEET C-BAND MEDIUM POWER GaAs MESFET NE850R599 ABSOLUTE MAXIMUM RATINGS1 FEATURES TC= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 0.5 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 9.5 dB VDSX Drain to Source Voltage

NEC Microwave Semiconductors

Contextual Info: PRELIMINARY DATA SHEET C-BAND MEDIUM POWER GaAs MESFET NE850R599A FEATURES_ OUTLINE DIMENSIONS • HIGH O U T P U T POW ER: 0.5 W Units in mm PACKAGE OUTLINE 99 • HIGH LINEAR GAIN: 9.5 dB • HIG H EFFICIENC Y (PAE): 38% • SU PER IO R IN TER M O D U LA TIO N DISTORTIO N

nec microwave

Abstract: MESFET NE850R599A NEC Microwave Semiconductors NE8500100
Contextual Info: C-BAND MEDIUM POWER GaAs MESFET NE850R599A OUTLINE DIMENSIONS Units in mm FEATURES • HIGH OUTPUT POWER: 0.5 W PACKAGE OUTLINE 99 • HIGH LINEAR GAIN: 9.5 dB 5.2±0.3 • HIGH EFFICIENCY (PAE): 38% 1.0±0.1 • SUPERIOR INTERMODULATION DISTORTION 4.0 MIN BOTH LEADS

NEM0899F01-30

Contextual Info: Discrete Power Devices Selection Guide, 2-2 Power Devices Selection Guide US BAND INTERNALLY MATCHED GaAs DEVICES Typical Specifications @ Ta = 25'C » r u-v w i JL ct Ruawini i Part Number Frequency Range PidB GHz (dBm) Linearity Linear Power Added

850R599

Contextual Info: PRELIMINARY DATASHEET C-BAND MEDIUM POWER GaAs MESFET NE850R599 ABSOLUTE MAXIMUM RATINGS1 FEATURES Tc= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 0.5 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 9.5 dB V dsx Drain to Source Voltage