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    NTE253 Search Results

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    NTE253 Price and Stock

    NTE Electronics Inc NTE2539

    Transistor, bjt, npn,400V V(Br)Ceo,25A I(C),to-247Var Rohs Compliant: Yes |Nte Electronics NTE2539
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark NTE2539 Bulk 1
    • 1 -
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    Onlinecomponents.com NTE2539 33
    • 1 -
    • 10 $13.48
    • 100 $10.5
    • 1000 $9.4
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    Bristol Electronics NTE2539 1
    • 1 -
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    Quest Components NTE2539 1
    • 1 $12
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    NTE Electronics Inc NTE2530

    Transistor NPN Silicon 400V IC=2A TO-126N Case Tf=0.6us High Voltage Driver Compl To NTE2531
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com NTE2530 80
    • 1 -
    • 10 $3.35
    • 100 $2.67
    • 1000 $2.37
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    Bristol Electronics NTE2530 2
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    Quest Components NTE2530 1
    • 1 $6
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    NTE Electronics Inc NTE2532

    EPROM - NMOS Memory - 32K - 300ns - UV Erasable - 24-lead DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com NTE2532 2
    • 1 $32.61
    • 10 $26.35
    • 100 $23.32
    • 1000 $22.05
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    Bristol Electronics NTE2532 1
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    Quest Components NTE2532 4
    • 1 $21.4403
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    NTE2532 1
    • 1 $20.8
    • 10 $20.8
    • 100 $20.8
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    NTE Electronics Inc NTE253MCP

    Matched Complementary Pair Of NTE253 And NTE254
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com NTE253MCP 2
    • 1 $5.46
    • 10 $4.96
    • 100 $3.84
    • 1000 $3.4
    • 10000 $3.31
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    NTE Electronics Inc NTE253

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics NTE253 10
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    NTE253 5 2
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    • 10 $3
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    Quest Components NTE253 10
    • 1 $2.2115
    • 10 $2.0346
    • 100 $2.0346
    • 1000 $2.0346
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    NTE253 8
    • 1 $2.52
    • 10 $1.89
    • 100 $1.89
    • 1000 $1.89
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    NTE253 4
    • 1 $4
    • 10 $3
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    Find more NTE253 price and stock on Findchips.com

    NTE253 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTE253 NTE Electronics Silicon Complementary Transistor Darlington Power Amplifier Original PDF
    NTE253 NTE Electronics Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor NPN, Si, Darlington Power Amp, Pkg Style TO126 Scan PDF
    NTE2530 NTE Electronics Silicon Complementary Transistor High Voltage Switch Original PDF
    NTE2531 NTE Electronics Silicon Complementary Transistor High Voltage Switch Original PDF
    NTE2532 NTE Electronics Integrated Circuit NMOS, 32K EPROM, 300ns Original PDF
    NTE2533 NTE Electronics Silicon NPN Transistor High-Definition Color Display Horizontal Deflection Output Original PDF
    NTE2534 NTE Electronics Silicon Complementary Transistor High Current Switch Original PDF
    NTE2535 NTE Electronics Silicon Complementary Transistor High Current Switch Original PDF
    NTE2536 NTE Electronics Silicon Complementary Transistor High Current Switch Original PDF
    NTE2537 NTE Electronics Silicon Complementary Transistor High Current Switch Original PDF
    NTE2538 NTE Electronics Silicon NPN Transistor High Voltage, High Current Switch Original PDF
    NTE2539 NTE Electronics Silicon NPN Transistor High Voltage, High Speed Switch Original PDF
    NTE253MCP NTE Electronics TRANS NPN DARL 80V 4A TO126 Original PDF

    NTE253 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTE2534

    Abstract: NTE2535
    Text: NTE2534 NPN & NTE2535 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Collector Emitter Saturation Voltage Applications: D Relay Drivers D High Speed Inverters D Converters Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)


    Original     		PDF NTE2534 NTE2535 10IB1 10IB2 NTE2535, NTE2534 NTE2535

    NTE2539

    Abstract: No abstract text available
    Text: NTE2539 Silicon NPN Transistor High Voltage, High Speed Switch Features: D High Breakdown Voltage and Reliability D Fast Switching Speed D Wide ASO Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V


    Original     		PDF NTE2539 NTE2539

    PNP Monolithic Transistor Pair

    Abstract: NTE253MCP DSA0013913 SILICON COMPLEMENTARY transistors darlington
    Text: NTE253 NPN & NTE254 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications.


    Original     		PDF NTE253 NTE254 NTE253MCP PNP Monolithic Transistor Pair DSA0013913 SILICON COMPLEMENTARY transistors darlington

    NPN VCEO 800V

    Abstract: NTE2533 NPN Transistor 1500V 20a
    Text: NTE2533 Silicon NPN Transistor High−Definition Color Display Horizontal Deflection Output TO3PBL Type Package Features: D High Speed: tf = 100ns Typ D High Breakdown Voltage: VCBO = 1500V D High Reliability Absolute Maximum Ratings: TA = +25°C unless otherwise specified


    Original     		PDF NTE2533 100ns 100mA, NPN VCEO 800V NTE2533 NPN Transistor 1500V 20a

    Untitled

    Abstract: No abstract text available
    Text: NTE2536 NPN & NTE2537 (PNP) Silicon Complementary Transistors High Current Switch Features: D High Current Capacity D Wide ASO Range D Low Saturation Voltage Applications: D Motor Drivers D Relay Drivers D Converters Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)


    Original     		PDF NTE2536 NTE2537

    Untitled

    Abstract: No abstract text available
    Text: NTE2530 NPN & NTE2531 (PNP) Silicon Complementary Transistors High Voltage Driver Features: D High Current Capacity: IC = 2A D High Breakdown Voltage: VCEO = 400V Min Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V


    Original     		PDF NTE2530 NTE2531 10IB1 10IB2 500mA,

    NPN VCEO 800V

    Abstract: NTE2533
    Text: NTE2533 Silicon NPN Transistor High–Definition Color Display Horizontal Deflection Output Features: D High Speed: tf = 100ns Typ D High Breakdown Voltage: VCBO = 1500V D High Reliability Absolute Maximum Ratings: TA = +25°C unless otherwise specified


    Original     		PDF NTE2533 100ns 100mA, NPN VCEO 800V NTE2533

    NTE2538

    Abstract: No abstract text available
    Text: NTE2538 Silicon NPN Transistor High Voltage, High Current Switch Features: D High Breakdown Voltage and Reliability D Fast Switching Speed D Wide ASO Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V


    Original     		PDF NTE2538 NTE2538

    NTE2531

    Abstract: pnp 400v 4a to251 transistor pnp 30V 2A 1W NTE2530
    Text: NTE2530 NPN & NTE2531 (PNP) Silicon Complementary Transistors High Voltage Driver TO251 Features: D High Current Capacity: IC = 2A D High Breakdown Voltage: VCEO = 400V Min D TO251 Type Package Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)


    Original     		PDF NTE2530 NTE2531 10IB1 -10IB2 500mA, NTE2531 pnp 400v 4a to251 transistor pnp 30V 2A 1W NTE2530

    pnp 400v 4a

    Abstract: PNP 400V NTE2530 NTE2531 POWER TRANSISTORS 10A 400v pnp NTE253
    Text: NTE2530 NPN & NTE2531 (PNP) Silicon Complementary Transistors High Voltage Driver Features: D High Current Capacity: IC = 2A D High Breakdown Voltage: VCEO = 400V Min Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V


    Original     		PDF NTE2530 NTE2531 10IB1 -10IB2 500mA, pnp 400v 4a PNP 400V NTE2530 NTE2531 POWER TRANSISTORS 10A 400v pnp NTE253

    10MILLISECOND

    Abstract: NTE253 74 ttl
    Text: NTE2532 Integrated Circuit NMOS, 32K EPROM, 300ns Description: The NTE2532 is a 32,768–bit, ultraviolet–light–erasable, electrically–programmable read–only memory in a 24–Lead DIP type package. This device is fabricated using N–channel silicon–gate


    Original     		PDF NTE2532 300ns NTE2532 10MILLISECOND NTE253 74 ttl

    NTE199

    Abstract: NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K
    Text: Semiconductor Directory Mfr.Õs Type 13 Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page MPX2010GS MPX2050DP MPX2050GP MPX2100A MPX2100AP 15.08 17.27 17.69 17.74 14.57 MOT


    Original     		PDF MPX2010GS MTP75N06HD NTE102A NTE2312 MPX2050DP MTP8N50E NTE103 NTE2315 MPX2050GP MTW10N100E NTE199 NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


    Original     		PDF 100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717

    123AP

    Abstract: NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130
    Text: NTE Electronics Transistors Bi-Polar Transistors Ñ Continued Stock No. Mfr.Õs Type Polarity and Material Description and Application 935-0755 935-0760 935-0840 935-0841 935-0845 935-0855 107 108 123A 123AP 124 126 NPN-Si NPN-Si NPN-Si NPN-Si NPN-Si PNP-Ge


    Original     		PDF 123AP NTE159) NTE396) NTE375) NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130

    Untitled

    Abstract: No abstract text available
    Text: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2056 16-Lead DIP, See Diag. 249 8-B it Multiplying D/A Converter Range Control 0 Compensation A6 n 0 A7 0 V ret(-) A 5B ^ A1 Q 0 A8 (LSB) A2 B 0 Data Out a: Q A7 A3 Q Q Data In A 2 g 0 A6 A4 Q j A0 Q


    OCR Scan     		PDF NTE2056 16-Lead NTE2102 350ns NTE2104 200ns NTE2107 22-Lead

    Untitled

    Abstract: No abstract text available
    Text: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Typical Freq. (MHz) Case Style Diag. No. Maximum Collector Current (Amps) BVCeo BVEbo


    OCR Scan     		PDF NTE248) NTE247) NTE250) NTE275) NTE244) NTE243) NTE246) NTE245) D003SSD

    a5 gnd

    Abstract: NTE4164 NTE2117 NTE2164 BB 298 NTE2102 64k dynamic RAM 64k nmos static ram NTE2114 NTE2128
    Text: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2056 16-Lead DIP, See Diag. 249 8 -B it Multiplying D/A Converter NTE2102 16-Lead DIP, See Diag. 249 NMOS, 1K Static RAM (SRAM), 350ns NTE2104 16-Lead DIP, See Diag. 249 NMOS, 4K Dynamic RAM (DRAM), 200ns


    OCR Scan     		PDF NTE2056 16-Lead NTE2102 350ns NTE2104 200ns NTE2107 22-Lead a5 gnd NTE4164 NTE2117 NTE2164 BB 298 64k dynamic RAM 64k nmos static ram NTE2114 NTE2128