S1309 Search Results

BUZ80

Contextual Info: BUZ 80 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 80 A 800 V 3.6 A 3Ω TO-220 AB C67078-S1309-A3 Maximum Ratings Parameter Symbol Continuous drain current

S1309

Abstract: S1300
Contextual Info: SaRonix Voltage Controlled Crystal Oscillator Technical Data ACTUAL SIZE 3.3V, HCMOS S1300 / S1309 Series Frequency Range: 1.5 MHz to 28.6363 MHz Frequency Stability: ±20, ±25 or ±50ppm over all conditions: operating temperature, voltage change, load change, calibration

ST1300 equivalent transistor

Abstract: SMD circuits MARKING CODE AA smd diode code B2 S1309 smd marking DD ST1300 DIL14 S1300 SMD 4608 SMD DIL OSCILLATOR
Contextual Info: SaRonix Voltage Controlled Crystal Oscillator Technical Data ACTUAL SIZE 3.3V, LVCMOS S1300 / S1309 / ST1300 / ST1309 Series Frequency Range: 1.5 MHz to 28.6363 MHz Frequency Stability: ±20, ±25 or ±50ppm over all conditions: operating temperature, voltage change, load change, calibration

Contextual Info: SIEMENS BUZ 80 SIPMOS Power Transistor • N channel • Enhancement mode •Avalanche-rated Type BUZ 80 Vus 800 V b 3.1 A %S on 40 Package Ordering Code TO-220 AB C67078-S1309-A2 Maximum Ratings Parameter Symbol Continuous drain current Values >D Tc = 28 °C

BUZ 840

Abstract: C67078-S1309-A2 50b11
Contextual Info: BUZ 80 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 80 800 V 3.1 A 4Ω TO-220 AB C67078-S1309-A2 Maximum Ratings Parameter Symbol Continuous drain current

ST1309

Abstract: S1309 ST1300 SMD circuits MARKING CODE AA smd diode code B2 smd marking DD ST1300 equivalent ST1300 equivalent transistor DIL14 S1300
Contextual Info: SaRonix Voltage Controlled Crystal Oscillator Technical Data ACTUAL SIZE 3.3V, LVCMOS S1300 / S1309 / ST1300 / ST1309 Series Frequency Range: 1.5 MHz to 28.6363 MHz Frequency Stability: ±20, ±25 or ±50ppm over all conditions: operating temperature, voltage change, load change, calibration

Contextual Info: SIEMENS BUZ 80 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs BUZ 80 8 Ò0 V b ^DS on Package Ordering Code 3.1 A 4n TO-220 AB C67078-S1309-A2 Maximum Ratings Parameter Symbol Continuous drain current Values b Tc = 28 °C

BUZ80

Abstract: BUZ 840 C67078-S1309-A2
Contextual Info: BUZ 80 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 80 800 V 3.1 A 4Ω TO-220 AB C67078-S1309-A2 Maximum Ratings Parameter Symbol Continuous drain current

200743D

Abstract: S1308 S1307 BAW 43 S1309 MSL3 20-pin SKY73023-21
Contextual Info: PRELIMINARY DATA SHEET SKY65238: Power Amplifier Module With Integrated BAW Filter for WLAN Applications Applications Description • IEEE802.11 b/g/n WLAN − Access points and routers − Set top boxes, gaming consoles, and other home entertainment devices including video, voice, and data

Contextual Info: SiHD6N62E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.9 34 Qgs (nC) 4 Qgd (nC) 8 Configuration

Contextual Info: SiHP21N65EF www.vishay.com Vishay Siliconix EF Series Power Fast Body Diode MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast Body Diode MOSFET using E Series Technology • Reduced Trr, Qrr, and Irrm • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss)

Contextual Info: SiP32408, SiP32409 Vishay Siliconix 1.1 V to 5.5 V, Slew Rate Controlled Load Switch DESCRIPTION FEATURES SiP32408 and SiP32409 are slew rate controlled load switches designed for 1.1 V to 5.5 V operation. These devices guarantee low switch on-resistance at 1.2 V

burr brown OPA132

Abstract: OPA2132
Contextual Info: 0PA132 OPA2132 0PA4132 B U R R -B R O W N 1 E High Speed FET-INPUT OPERATIONAL AMPLIFIERS FEATURES OPA132 • FET INPUT: lB = 50pA max • WIDE BANDWIDTH: 8MHz • HIGH SLEW RATE: 20V/^is • LOW NOISE: 8nV/VHz 1kHz • LOW DISTORTION: 0.00008% • HIGH OPEN-LOOP GAIN: 130dB (600il load)

Contextual Info: SPICE Device Model SiR466DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SiR800DP www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SiR472DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

S1309

Contextual Info: Housing Style - Rectangular 10 mm - Embeddable, Potted-In Cable Part Number ID Number Bi 2-Q10S-AN6X S1619310 Features Em bed dab le Sen sin Ran g ge m m Inductive Sensors • Output 2 3-Wire DC NPN Bi 2-Q10S-AP6X • S1609360 2 3-Wire DC PNP Bi 2-Q10S-VN6X

Contextual Info: SiHG73N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • Low Input Capacitance (Ciss) 0.039 • Reduced Switching and Conduction Losses

ULTRAVIOLET LED

Abstract: uvex dust sensor
Contextual Info: PRELIMINARY UPVLED ULTRA-VIOLET LED P RODUCT P REVIEW KEY FEATURES ƒ ƒ ƒ ƒ ƒ Parameters Symbol Value Unit DC Forward Drive Current IF 30 mA Peak Forward Current IFP 100 mA LED Operating Junction Temperature Tj -40 to +150 °C Reverse Voltage VR 8 V Power Dissipation

Contextual Info: SPICE Device Model SiR890DP www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SiR492DP www.vishay.com Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SiRA04DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SiR892DP www.vishay.com Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SiR496DP www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C