SDT123 Search Results

Contextual Info: SDT123 53mm / 9kV THYRISTOR Type SDT123 thyristor is suitable for phase control applications such as HVDC valves, static VAR compensators and synchronous motor drives. The silicon junction is manufactured by the proven multi-diffusion process and is supplied in an

SDT123

Abstract: 6" thyristor for HVDC SDT123PK SDT123PT SDT123RK SDT123RT
Contextual Info: SDT123 53mm / 9kV THYRISTOR Type SDT123 thyristor is suitable for phase control applications such as HVDC valves, static VAR compensators and synchronous motor drives. The silicon junction is manufactured by the proven multi-diffusion process and is supplied in an

Contextual Info: SDT12301 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)200 I(C) Max. (A)10 Absolute Max. Power Diss. (W)220 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

SDT96309

Abstract: sdt96
Contextual Info: -j/otttron_^ Eom gir ©at&ìl©© S W IT C H T R O N P O W E R T R A N S IS T O R S Devices. Inc DEVICE POLARITY TYPE v C EO su s 'C ( P .i k ) hpj; & 'c VC E (sat) ifM H j PT (W ) V O LTS AM PS MIN/MAX AM PS M AX. A M PS MIN. MAX 30

DTS517

Abstract: BUV28A
Contextual Info: POWER SILICON TRANSISTORS Item Number >C Part Number Manufacturer Type Max A V(8R)CEO Of) PD Max ON) hFE fT 'CBO Max t0N Max Min (HZ) (A) (s) r (CE)ut Max Toper Max (Ohms) (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .15

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

2NS604

Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
Contextual Info: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75

BDY96

Abstract: DTS519 60M6 2n2114 IR519
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V A (BR)CEO Max hFE fT •CBO Max t0N Max Of) ON) Min (HZ) (A) (8) PD r (CE)sat Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) 5 10 15 20 25 30 35 40

SDT96309

Abstract: SDT13305 SDT12303 SDT12302 2n6561 SDT13301 SDT13302 SDT13303 2N6546 2N6547
Contextual Info: V PT @ 1C CE @ IC 1TMHz Polarity sus (Peak) MIN/ (sat) (W) VOLTS AMPS MAX AMPS MAX AMPS MIN. MAX. 10/ 2N6546 * NPN 300 30 5.0 1.50 10.0 6.0 175 60 12/ 2N6547 * NPN 400 30 5.0 1.50 10.0 6.0 175 60 10/ 2N6560 NPN 450 15 5.0 0.75 5.0 10.0 220 40 10/ 2N6561

2N5286

Abstract: 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562
Contextual Info: SOLITRON DEVICES INC ^ D eT| fl3t.flt.DE 0D0S7b5 7 l ~ T ' 3 3 - 0 / F ^ E x y K g T T a t m , © _ PLAN AR POWER TRAN SISTO RS § M&. DEVICE TYPE hpE MIN/MAX @ ic A VCE (sat) MAX (V) @ ic (A) *T MIN (MHz) PT

sdt12303

Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 >= 40 50 60 70 80 7.0 8.0 8 8.0 8.0 10 10 10 10 10 ~eneral:seml SDT7809 SDT7809 SDT7809 BUX17B BUX17B SDT14204 SDT14304 SDT14304 XGSR10030 Solltron PPC Product Sid St Dvcs GE Solid St NthAmerSemi

Contextual Info: SOLITRON DEVICES INC flt. DeT| fl3t.flt.02 ODOESST D | 112 T - ^ 3 '¿>5 ELEMENT NUMBER HIGH VOLTAGE, FAST SWITCHING NPN EPITAXIAL PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: > 5 0 ,0 0 0 À Aluminum FO RM ERLY 12 Collector: Polished Silicon

DK53

Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
Contextual Info: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240

TO114

Contextual Info: SOLITRON DEVICES "is INC de -ÆsiZran I ö3bßboa pmmw&ï ä t t ä l © Devices. Inc. SWITCHTROIM POW ER TRANSISTORS v CEO(sus VOLTS •C(Peak) AMPS hpE @ •c MIN/MAX AMPS NPN NPN NPN NPN PNP 300 400 450 300 -300 30 30 15 20 -15 10/60 12/60 10/40 10/50

2N6563

Abstract: buw73 BOSE
Contextual Info: O u tr a n Devices. Inc. HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER IMPIM EPITAXIAL PLANAR POWER TRANSISTOR FORMERLY 12 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)

DK53

Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
Contextual Info: Bipolar Transistors Cross Reference INDUSTY STANDARD 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240

SDT13305

Abstract: SDT12302 SDT13303 SDT7603 SDT7732 2N2811 2N2812 2N2813 2N2814 2N4070
Contextual Info: Device Type VCEO hFE V Min/Max @ IC (A) 2N2811 2N2812 2N2813 2N2814 2N4070 2N4071 2N4301 2N5006 2N5008 2N5218 2N5288 2N5289 2N5313 2N5315 2N5317 2N5319 2N5327 2N5540 2N5542 2N5622 2N5624 2N5626 2N5628 2N5730 2N5854 2N6128 2N6216 2N6217 2N6249 2N6250 2N6251

2N2611

Abstract: 2N8674 2N5675 2N2812 2N2813 2N4070 2N4071 2N4301 2N5218 2N5313
Contextual Info: SûUARE î> C O / GENERAL “ ^ 3 9 1 8 5 9 0 G EN E R A L SE M IC O N D U C T O R _ ' $ ÖS2SS0Ö 95D 02094 D T -J 3 -// le = 10 A M P S / ‘ BVceo PACKAGE VOLTS «CEV VOLTS b v eb0 2N2611 TO-61 60 2N2812 TO-61 60 2N2813

2N6561

Abstract: 2N6563 BUW73
Contextual Info: -Ætttron Devices. Inc. HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER NPN EPITAXIAL PLANAR POWER TRANSISTOR FORMERLY 12 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available) Also available on:

TRANSISTOR tip122 CHN 949

Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
Contextual Info: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.

B0411

Abstract: B0733 THD200F1 dk52 2SC4977 2N5415 REPLACEMENT TIP 2n3055 BD68D SGS-Thomson cross reference BUX37 THOMSON
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSOH SGS-THOMSON PAGE REPLACEMENT NEAREST PREFERRED KDUSTHY STANDARD 2N3016 2N5339 93 2N3772 2N3021 BDW52C 169 2N3789 2N3022 BDW52C BDW52C BDW52C 169 169 169 2N3790 2N3791 2N3792 BDW52C BDW52C 169 169 77 2N3863 2N3864

SDT12301-SDT12303

Contextual Info: 83686 02 SOL ITRON DEVIC ES INC 95D 02835 D W^fi3bflb02 0002635 fi | re [D yj©ir © äitäil ©( Devices, Inc. HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER IMPN EPITAXIAL PLANAR POWER TRANSISTOR (FORMERLY 12) CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum