SG800GXH24 Search Results

SG800GXH24

Contextual Info: TO SHIBA SG800GXH24 TOSHIBA GATE TURN-OFF THYRISTOR <;r;ann ;YH7A Unit in mm INVERTER APPLICATION • • • • Repetitive Peak Off-State Voltage R.M.S On-State Current Peak Turn-Off Current Critical Rate of Rise of On-State Current Critical Rate of Rise of Off-State Voltage

Contextual Info: T O S H IB A SG800GXH24 TOSHIBA GATE TURN-OFF THYRISTOR SG800GXH24 INVERTER APPLICATION U nit in mm = 4500V Repetitive Peak Off-State Voltage V DRM R.M.S On-State C urrent IT RMS = 300A Peak Turn-Off C urrent i TGQM = 800A Critical Rate of Rise of On-State C urrent

SG800GXH24

Abstract: 300C
Contextual Info: TOSHIBA SG800GXH24 TOSHIBA GATE TURN-OFF THYRISTOR INVERTER APPLICATION SG800GXH24 Repetitive Peak Off-State Voltage R.M.S On-State Current Peak Turn-Off Current Critical Rate of Rise of On-State Current Critical Rate of Rise of Off-State Voltage Unit in mm

500EXH21

Abstract: 100gxhh21 SG3000GXH24 800A 75m gate turn off thyristors TOSHIBA 100GXHH21 800GXHH21 800GX SG800GXH24
Contextual Info: G TOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG" while all reverse conducting types are marked with “SGR.” All devices ending with “26” are “Fine-pattern" devices that

gate turn off thyristors

Abstract: 500EXH21 800gxhh21 800exh21
Contextual Info: GTOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG” while all reverse conducting types are marked with “SGR." All devices ending with “26” are “Fine-pattern” devices that