100EXG11
Abstract: 500EXH21 200FXG12 200FXH12 800GXHH21 gto 200A 100exh gto 300A 100GXHH21 4500v
Text: SELECTION GUIDE — Asymmetrical Type GTO Peak Off-State Voltage 1300V 1600V 1800V 2500V 3300V 800A SG800R24 SG800U24 6000V SG800W24 SG1000GXH26 1000A 1200A SG1200EX24 1500A SG1500EX24 2000A 4500V SG600GXH26 600A SG2000R24 SG2000U24 SG2000W24 SG2000EX24 SG2000EX26
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SG2500EX24
SG3000EX24
SG4000EX26
SG2000R24
SG2000U24
SG2000W24
SG1200EX24
SG1500EX24
SG2000EX24
SG2000EX26
100EXG11
500EXH21
200FXG12
200FXH12
800GXHH21
gto 200A
100exh
gto 300A
100GXHH21
4500v
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Untitled
Abstract: No abstract text available
Text: TOSHIBA SG1500EX24 Unit in mm Inverter Application • Repetitive Peak Off-State Voltage: VDRM = 2500V Note 1 • R.M.S. On-State Current: h (RMS) = • Peak Turn-Off Current: ' t g q m = 15 0 0 A • Critical Rate of Rise of On-State Current: di/dt = 500A/JIS
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SG1500EX24
00A/JIS
10OOV/
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Untitled
Abstract: No abstract text available
Text: T O SH IB A GATE TURN-OFF THYRISTO R S G 1 5 E X 2 4 SG1500EX24 TENTATIVE DATA SG1500EX24 INVERTER APPLICATION U nit in mm Repetitive Peak Off-State Voltage : V d r m = 2500V (Note 1) R.M.S On-State Current : It (RMS) = ,750A Peak Turn-Off Current : l T G Q M = 1500A
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SG1500EX24
SG1500EX24)
--500A/
000V///S
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SG1500EX24
Abstract: No abstract text available
Text: TO SH IBA SG1500EX24 TOSHIBA GATE TURN-OFF THYRISTOR INVERTER APPLICATION SG1500 EX 24 Unit in mm 43MAX. MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off-state Voltage Note 1 Repetitive Peak Reverse Voltage Peak Turn-Off Current (Note 2) R.M.S On-State Current (Note 3)
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SG1500EX24
SG1500EX24
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QA1400
Abstract: 1500EX24
Text: TOSHIBA GATE TURN-OFF THYRISTOR SEM ICONDUCTOR TOSHIBA TECHNICAL S G1500 EX 24 DATA SG1 500EX24 Unit in mm INVERTER APPLICATION 43 MAX (1) CHARACTERISTIC Repetitive Peak Off-State Voltage (Note 1) Repetitive Peak Reverse Voltage Peak Turn-Off Current (Note 2)
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G1500
500EX24)
1500EX24-3*
QA1400
1500EX24
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snubber diode
Abstract: SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G
Text: 8. SELECTION GUIDE FOR GTO, FREE WHEELING DIODE AND SNUBBER DIODE GTO SNUBBER DIODE FREE WHEELING DIODE SG600GXH26 100GXHH21 100FXFG/H11 or 100GXHH2I SG800W24 200EXG/H11 100EXG/H11 SG1000GXH26 100GXHH21 100FXFG/H11 or 100GXHH21 SG1200EX24 300EXH21 100EXG/H11
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SG600GXH26
SG800W24
SG1000GXH26
SG1200EX24
SG1500EX24
SG2000EX24
SG2000EX26
SG2000GXH26
SG2200GXH24
SG2500EX24
snubber diode
SG2500GX
gto sg3000gxh24
SG3000GXH24
free diode
1000GXHH22
800EXH21
SG3000GXH
100GXHH21
SG4000GXH26G
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500EXH21
Abstract: 100gxhh21 SG3000GXH24 800A 75m gate turn off thyristors TOSHIBA 100GXHH21 800GXHH21 800GX SG800GXH24
Text: G TOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG" while all reverse conducting types are marked with “SGR.” All devices ending with “26” are “Fine-pattern" devices that
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SG1200EX24
SG1500EX24
SG2000EX24
SG2200GXH24
SG3000EX24
SG3000GXH24
SG3000JX24
SG2000GXH26
SG800GXH24
SG1000GXH26
500EXH21
100gxhh21
800A 75m
gate turn off thyristors
TOSHIBA 100GXHH21
800GXHH21
800GX
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gate turn off thyristors
Abstract: 500EXH21 800gxhh21 800exh21
Text: GTOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG” while all reverse conducting types are marked with “SGR." All devices ending with “26” are “Fine-pattern” devices that
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1SG1200EX24
SG1500EX24
SG2000EX24
SG2000EX26
SG2200GXH24
SG3000EX24
SGR3000EX26
SG4000EX26
SGR3000GXH26
SG4000GXH26
gate turn off thyristors
500EXH21
800gxhh21
800exh21
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3CG3F
Abstract: No abstract text available
Text: TOSHIBA GATE TURN-OFF THYRISTOR. SEMICONDUCTOR T O SH IB A TECHNICAL SG 1500 EX 24 DATA SGI 500E X 24 Unit in mm INVERTER APPLICATION 43MAX. • • • • • Repetitive Peak Off-State Voltage : V d rm ;= 2500V (Note 1) R.M.S On-State Current : It (RMS)~^50A
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43MAX.
SG1500EX24
G1500EX
3CG3F
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