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TE Connectivity WXA-0202-0-9CS3200AIRFRAME COMPOSITE W |
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TE Connectivity WXA-0202-0-9CS3264AIRFRAME COMPOSITE W |
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TE Connectivity WXA-0202-0-9CS3199AIRFRAME COMPOSITE W |
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A020209 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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HV9708
Abstract: A020209
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HV9708 HV9708 A020209 A020209 | |
SIVPContextual Info: VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VP0109 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing |
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VP0109 DSFP-VP0109 A020209 SIVP | |
sivn
Abstract: VN0550 VN0550N3-G 125OC
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VN0550 VN0550 DSFP-VN0550 A020209 sivn VN0550N3-G 125OC | |
sivn fet
Abstract: sivn
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VN1206 DSFP-VN1206 A020209 sivn fet sivn | |
Contextual Info: HV7022 Die Specification Pad Layout 12 0,0 13 14 15 16 17 18 19 20 21 22 23 11 24 10 25 9 26 8 27 7 28 6 29 5 30 4 31 3 32 2 33 1 34 43 42 41 40 39 38 37 36 35 Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 185 155 |
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HV7022 HV7022 HV7022C A020209 | |
HV9808Contextual Info: HV9808 Die Specification Pad Layout 12 14 13 16 17 18 19 20 21 22 23 11 24 10 25 9 26 8 27 7 28 6 29 5 30 4 31 3 32 2 0,0 15 42 41 40 39 1 38 37 36 35 33 34 Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 113 97 20 ± 1.0 |
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HV9808 HV9808 A020209 | |
HV57908Contextual Info: HV57908 Die Specification Pad Layout 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 0,0 23 42 22 43 21 44 20 45 19 46 18 47 17 48 16 49 15 50 14 51 13 52 12 53 11 54 10 55 9 56 8 57 7 58 6 59 5 60 4 61 3 62 2 63 1 64 65 80 79 78 77 76 75 74 73 72 |
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HV57908 HV57908 A020209 | |
HV7620Contextual Info: HV7620 Die Specification Pad Layout 22 0,0 23 25 24 21 26 20 27 19 28 18 29 17 30 16 31 15 32 14 33 13 34 12 35 11 36 10 37 9 38 8 39 7 40 6 41 5 42 4 3 2 43 44 45 1 46 64/63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 Die Specifications Die Dimensions |
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HV7620 HV7620 408-222-88plications, A020209 | |
sivnContextual Info: VN3515 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities |
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VN3515 DSFP-VN3515 A020209 sivn | |
sivp VP0104
Abstract: SIVP vp0104
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VP0104 DSFP-VP0104 A020209 sivp VP0104 SIVP | |
sivnContextual Info: VN0808 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination |
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VN0808 DSFP-VN0808 A020209 sivn | |
sivn
Abstract: sivn fet VN0104N3-G marking n3 VN0104 sivn transistor DSPD-3TO92N3
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VN0104 DSFP-VN0104 A020209 sivn sivn fet VN0104N3-G marking n3 VN0104 sivn transistor DSPD-3TO92N3 | |
sivn
Abstract: sivn fet 125OC VN3515 3515L
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VN3515 DSFP-VN3515 A020209 sivn sivn fet 125OC VN3515 3515L | |
sivn
Abstract: sivn fet vn0106 SIVN01 marking n3 VN0106N3-G
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VN0106 DSFP-VN0106 A020209 sivn sivn fet vn0106 SIVN01 marking n3 VN0106N3-G | |
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Contextual Info: VN2410 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination |
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VN2410 DSFP-VN2410 A020209 | |
sivnContextual Info: VN0606 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination |
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VN0606 DSFP-VN0606 A020209 sivn |