A022309 Search Results
A022309 Datasheets Context Search
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Contextual Info: TP2435 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling |
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TP2435 DSFP-TP2435 A022309 | |
TN2435Contextual Info: TN2435 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This |
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TN2435 DSFP-TN2435 A022309 TN2435 | |
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Contextual Info: TN2130 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain |
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TN2130 DSFP-TN2130 A022309 | |
SOT-23 IP
Abstract: TP2104 Diode SOT-23 marking 3V
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TP2104 DSFP-TP2104 A022309 SOT-23 IP TP2104 Diode SOT-23 marking 3V | |
TP0620
Abstract: sitp
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TP0620 DSFP-TP0620 A022309 TP0620 sitp | |
SOT-23 IP
Abstract: TN2130K1-G 125OC TN2130 mos n-channel SOT-23
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TN2130 DSFP-TN2130 A022309 SOT-23 IP TN2130K1-G 125OC TN2130 mos n-channel SOT-23 | |
SITP
Abstract: Tp0606 TP0606N3-G
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TP0606 DSFP-TP0606 A022309 SITP Tp0606 TP0606N3-G | |
SITP
Abstract: TP0604 TP0604N3 SOW MARKING
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TP0604 DSFP-TP0604 A022309 SITP TP0604 TP0604N3 SOW MARKING | |
tp5lw
Abstract: TP2502 TP2502ND
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TP2502 125pF DSFP-TP2502 A022309 tp5lw TP2502 TP2502ND | |
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Contextual Info: TN0606 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold - 2.0V max. High input impedance Low input capacitance - 100pF typical Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage |
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TN0606 100pF DSFP-TN0606 A022309 | |
TP2435Contextual Info: TP2435 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This |
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TP2435 DSFP-TP2435 A022309 TP2435 | |
tp5d
Abstract: tp2540n8-g SITP TP2540 TP2540ND
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TP2540 125pF DSFP-TP2540 A022309 tp5d tp2540n8-g SITP TP2540 TP2540ND | |
TN0604WG-G
Abstract: 75E1 TN0604 TN0604N3-G
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TN0604 140pF DSFP-TN0604 A022309 TN0604WG-G 75E1 TN0604 TN0604N3-G | |
SIVN0300L
Abstract: 0300l VN0300 0300L to92
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VN0300 DSFP-VN0300 A022309 SIVN0300L 0300l VN0300 0300L to92 | |
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Contextual Info: VN0300 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities |
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VN0300 DSFP-VN0300 A022309 | |
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Contextual Info: TN2535 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold High input impedance Low input capacitance 125pF max. Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage This low threshold, enhancement-mode (normally-off) |
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TN2535 125pF DSFP-TN2535 A022309 | |
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Contextual Info: TN2510 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This |
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TN2510 125pF DSFP-TN2510 A022309 | |
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Contextual Info: TP0620 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This |
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TP0620 DSPD-TO92TapingSpec B070610 | |
TP2424Contextual Info: TP2424 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This |
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TP2424 DSFP-TP2424 A022309 TP2424 | |
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Contextual Info: TD9944 Dual N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This |
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TD9944 125pF DSFP-TD9944 A022309 | |
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Contextual Info: VN0808 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination |
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VN0808 DSFP-VN0808 A022309 | |
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Contextual Info: TP5335 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex TP5335 is a low threshold enhancementmode normally-off transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device |
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TP5335 TP5335 DSFP-TP5335 A022309 | |
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Contextual Info: TP2424 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling |
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TP2424 DSFP-TP2424 A022309 | |
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Contextual Info: TP2104 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling |
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TP2104 DSFP-TP2104 A022309 | |