A14.A PACKAGE Search Results

LN5061

Abstract: A14P Rectifier 1N5059 A14B A14B A14P diode A14B LN5060 ln5062 1N5059 1N5060
Contextual Info: Passivated Rectifier A14 SERIES 1N5059 1N5060 1N5061 1N5062 A14P TRANSIENT VOLTAGE PROTECTED 2.5 Amps 200-1000 Volts THE GENERAL ELECTRIC A14 IS A 2.5 AMPERE RATED, AXIAL-LEADED GENERAL PURPOSE RECTIFIER. DUAL HEATSINK CONSTRUCTION PRO­ VIDES RIGID MECHANICAL SUPPORT FOR THE PELLET AND EXCELLENT

in5062

Abstract: A14P
Contextual Info: 74 729 4 62 1 POWEREX INC T - °t ~i 3 tEJ7amtai naoiasi Passivated Rectifier A14 SERIES TRANSIENT VOLTAGE PROTECTED 2.5 Amps 200-1000 Volts 1N5059 1N5060 1N5061 1N5062 AMP THE GENERAL ELECTRIC A14 IS A 2.5 AMPERE RATED, AXIAL-LEADED GENERAL PURPOSE RECTIFIER. DUAL HEATSINK CONSTRUCTION PRO­

1N5061

Abstract: A14P A14B IN5059 1N5059 1N5060 1N5062 A14D A14M A14N
Contextual Info: 7294621 POWEREX INC 74 I ieT J 7 5 1 4 1 ,2 1 T- °i~i3 DÜÜ1351 Passivated Rectifier A14 SERIES TRANSIENT VOLTAGE PROTECTED 2.5 Amps 200-1000 Volts 1N5059 1N5060 1N5061 THE GENERAL ELECTRIC A14 IS A 2.5 AMPERE RATED, AXIAL-LEADED GENERAL PURPOSE RECTIFIER. DUAL HEATSINK CONSTRUCTION PRO­

MPS-A13

Abstract: MPS-A14
Contextual Info: 111 E SOLID STATE 3875081 G E SOLID STATE DE~| 3ñ?5Qñl □ □IT'ifi? 1 01E 17987 D Signal Transistors MPS-A13, MPS-A14 T '¿< 7 « 2 7 Silicon Darlington Transistors TO-92 The GE/RCA M P S-A 13 and A14 are planar epitaxial passiva­ ted N PN silicon Darlington transistors designed for preampli­

"ceramic frit"

Abstract: A14A dip 28 dimension A14.A Package
Contextual Info: Ceramic Package Ceramic Frit Seal Cerpack Packages Cerpack A14.A k 14 LEAD CERAMIC FRIT SEAL CERPACK PACKAGE INCHES e D1 A A b E1 Q E A C L c1 LEAD FINISH SYMBOL MIN MAX MIN MAX NOTES A - 0.085 - 2.16 - b 0.013 0.020 0.33 0.51 4 b1 0.013 0.017 0.33 0.43

LTC1040CN

Abstract: LTC1040
Contextual Info: S.O. PACKAGE UPDATE fjvrm. LTC1040CS TECHNOLOGY SPECIFICATION NOTICE =3V+ STROBE d - 1Vpp ON/ÖFF I— A+B I— = 3 OSC Août I_ = 3 Bout A14"I " Ü Part Number LTC1040CS Temo.Banae -40°<Ta<+85°C = □ B1 + A 1 -C = ZZ3B 1- A 2+C = . 1B2+ A2- c m

Contextual Info: ELPAQ EMS256K8B A division of ELMO Semiconductor 35 - 55ns 2Mb CMOS STATIC SRAM FEATURES Pin Configuration High density SRAM module wc Organized as 262,144 x 8 A16 c Access time 35 - 55ns A12 A14 A7 Low power consumption

DS1245V

Contextual Info: DS 1245Y/A B DALLAS DS1245Y/AB 1024K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss NC 1 1 A16 A14 • DIP-package devices directly replace 128K x 8 vola­

27C510

Abstract: pc51020 27C510-12 27C510-15 PC510-20 LA5524 memory device programers
Contextual Info: SMLS510A-AUGUST1990-REVISED JANUARY 1993 J AND N PACKAGESÎ {TOP VIEW Organization . . . 64K x 8 Single 5-V Power Supply 30 ] NC A 12[ 4 29 ] A14 A 7[ 5 28 ] A13 A 6f 6 27 ] A 8 A 5f 7 26 ] A9 A 4[ 8 25 ] A11 A 3f 9 A 2[ 10 24 ] G A 1 [ 11 AOf 12 22 ] È

Contextual Info: Package outline HLQFN78R: plastic thermal enhanced low profile quad flat package; no leads; 78 terminals; resin based; body 12 x 12 x 1.15 mm B D SOT967-1 A terminal 1 index area E A detail X e1 eR L1 L D2 A14 v w b e A26 B10 D3 A13 M M C C A B C y1 C y A27

Contextual Info: D S 1647/D S 1S 47P PHELlMiNARY f iA I • A C - Nonvolatile Timekeeping RAM FEATURES PIN ASSIGNMENT DS1647/DS1647P A I6 B 2 A14 §3 A l2 • Clock registers are accessed identical to the static RAM. These registers are resident In the eight top RAM locations.

Contextual Info: Plastic Packages for Integrated Circuits Package Outline Drawing C69.5x5B 69 LEAD aQFN 5X5 PACKAGE WITH 0.40 PITCH Rev 1, 12/12 MILLIMETER A D B A A2 C PIN 1 CORNER C A1 E eee C C A10 A12 A13 A14 A15 A16 A17 A18 A19 A20 A21 B6 B7 B8 B9 B10 B11 B12 B13 B14

1230Y

Contextual Info: D S 1230Y/A B DALLAS DS1230Y/AB 256K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 I1 1 • Data is automatically protected during power loss A12 I A7 I A6 I • Dl P-package devices directly replace 32K x 8 volatile

27c020-15

Abstract: TMS27C020 TMS27PC020 tms72
Contextual Info: TMS27C020 2 097152 BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC020 2 097152 BIT PROGRAMMABLE READ-ONLY MEMORY J PACKAGEt TOP VIEW 29 ] A14 28 ] A13 Max Access/Min Cycle Time ns ns ns ns GOäObbS 25 ] A11 24 I 5 23 ] A10 A1 [ 11 A 0[ 12 D Q 0[ 13

w68101

Contextual Info: W6810 SINGLE CHANNEL VOICEBAND CODEC Data Sheet Revision A14 -1- W6810 1. GENERAL DESCRIPTION The W6810 is a general-purpose single channel PCM CODEC with pin-selectable -Law or A-Law companding. The device is compliant with the ITU G.712 specification. It operates off of a single +5V

Contextual Info: D S 1 2 4 9 Y /A B DALLAS SEMICONDUCTOR FEATURES DS1249Y/AB 2048K Nonvolatile SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power k NC A ie • Data is automatically protected during power loss 1 A14 1 • Unlimited write cycles

Contextual Info: D S 1245Y/A B DALLAS SEMICONDUCTOR DS1245Y/AB 1024K Nonvolatile SRAM PIN ASSIGNMENT FEATURES • Data is automatically protected during power loss • Directly replaces 128K x 8 volatile static RAM or EEPROM NC ta 1 32 1 A16 I2 31 1 A14 A12 • Unlimited write cycles

Contextual Info: DS1647/DS1647LPM P R E L IM IN A R Y DS1647/DS1647LPM DALLAS SEMICONDUCTOR Nonvolatile Timekeeping RAM PIN ASSIGNMENT FEATURES • Integrated NV SRAM, real time clock, crystal, power fail control circuit and lithium energy source - 3 2 1 V cc 311 A15 A14 | 3

1245Y

Contextual Info: DS 1245Y/A B DALLAS SEMICONDUCTOR FEATURES DS1245Y/AB 1024K Nonvolatile SRAM PIN ASSIGNMENT I 1 A14 • Data is automatically protected during power loss I 1 1 32 1 2 3 31 • Unlimited write cycles • Low-power CMOS • Full ±10% Vqc operating range DS1245Y

34-PIN

Abstract: DS1345 DS1345W DS9034PC
Contextual Info: DS1345W PRELIMINARY •»Ai g j i c U A L L A O s e m ic o n d u c to r FEATURES DS1345W 3.3V 1024K Nonvolatile SRAM with Battery Monitor PIN ASSIGNMENT • 10 years m inim um data retention in the absence of external power NC NC A14 A13 A12 A11 A10 A9 A8

DALLAS SEMICONDUCTOR Ds1230

Abstract: dallas ds1230 EEPROM 28256 1230Y 34-PIN DS1230 DS1230AB DS1230Y CI 0740 LV 2.8 DS1230Y-150 DALLAS
Contextual Info: DS 1230Y/A B DALLAS DS1230Y/AB SEM ICON DUCTOR FEATURES 256K Nonvolatile SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 I1 1 • Data is automatically protected during power loss A12 I1 A7 I1 A6 I1 A5 I1 A4 I1

IN4247

Abstract: IN4248 IN4245 IN4249 IN4246 a14s 1N4245 1N4246 1N4247 1N4305
Contextual Info: 74C 01327 7294621 POWEREX INC ~7M » Ë ~ | 7 5 ,m b a i oDDiaa? 3 D 1N4305 SEE PAG E 229 Passivated IN4245 IN4246 IN4247 IN4248 IN4249 Rectifier TRANSIENT VOLTAGE PROTECTED 2.5 Amps 200-1000 Volts THE G E N E R A L ELECTRIC 1N4245-49 SE R IE S A R E A14 TYPES, 2.5 AMPERE

Contextual Info: DS1350Y/AB m a l i a DS1350Y/AB 4096K Nonvolatile SRAM w j^ Battery Monitor a U A LLA 3 SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A18 A17 A14 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 AO • Data is automatically protected during power loss

LC124

Contextual Info: LH28F004SU-LC FEATURES 4M 512K x 8 Flash Memory 40-PIN TSOP • 512K x 8 Word Configuration TOP VIEW S • 5 V Write/Erase Operation (5 VN/pp, 3.3 V Vc c ) - No Requirement for DC/DC Converter to Write/Erase A-I6 C 1• \ 40 Z I a 17 A-I5 C 2 39 □ A14 IZ