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    A7L TRANSISTOR Search Results

    A7L TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    A7L TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CY7C130, CY7C130A CY7C131, CY7C131A 1 K x 8 Dual-Port Static RAM 1 K × 8 Dual-Port Static RAM Functional Description Features • True dual-ported memory cells, which allow simultaneous reads of the same memory location ■ 1 K × 8 organization ■ 0.65 micron CMOS for optimum speed and power


    Original     		PDF CY7C130, CY7C130A CY7C131, CY7C131A CY7C130/130A/CY7C131/131A CY7C140/CY7C141 CY7C130/130A/CY7C131/131A; 48-pinout

    CY7C

    Abstract: CY7C130 CY7C131 CY7C140 CY7C141
    Text: CY7C130, CY7C130A CY7C131, CY7C131A 1 K x 8 Dual-Port Static RAM 1 K × 8 Dual-Port Static RAM Features Functional Description • True dual-ported memory cells, which allow simultaneous reads of the same memory location ■ 1 K × 8 organization ■ 0.65 micron CMOS for optimum speed and power


    Original     		PDF CY7C130, CY7C130A CY7C131, CY7C131A CY7C130/130A/CY7C131/131A/CY7C140 CY7C141 CY7C130/130A/CY7C131/131A CY7C CY7C130 CY7C131 CY7C140 CY7C141

    CY7C130

    Abstract: CY7C131 CY7C140 CY7C141
    Text: CY7C130, CY7C130A CY7C131, CY7C131A 1 K x 8 Dual-Port Static RAM 1 K × 8 Dual-Port Static RAM Features Functional Description • True dual-ported memory cells, which allow simultaneous reads of the same memory location ■ 1 K × 8 organization ■ 0.65 micron CMOS for optimum speed and power


    Original     		PDF CY7C130, CY7C130A CY7C131, CY7C131A CY7C130/130A/CY7C131/131A CY7C140/CY7C141 CY7C130/130A/CY7C131/131A; 48-pin CY7C13ication CY7C130 CY7C131 CY7C140 CY7C141

    MN3101

    Abstract: 4007A J201A transistor a 501523 transistor j201 Transistor 4007A 0022J a7l transistor NJM4560 pins 1m50e1
    Text: R52 10K-7 2 C1 .047MD7 1 INPUT 1 R3 47K-7 Q1 J201 R5 47K-7 R9 27K-7 8 R8 27K-7 5 4 R2 10K-7 R1 1M-7 C44 .0015J 10K-7 R4 2 VBIAS VBIAS 1 U1A 7 U1B 6 3 C13 .10KD7 C5 .0022J 7 .22LLME1 R6 10K-7 NJM4560/SM 5 6 C41 U2A INV R3 OUT NJM4560/SM C7 470PMD1 MN3005 NE570


    Original     		PDF 10K-7 047MD7 47K-7 27K-7 0015J 10KD7 MN3101 4007A J201A transistor a 501523 transistor j201 Transistor 4007A 0022J a7l transistor NJM4560 pins 1m50e1

    a7r transistor

    Abstract: transistor a4L A12L transistor A0LA A12L CY7C144 CY7C145
    Text: CY7C144 8K x 8/9 Dual-Port Static RAM with SEM, INT, BUSY Features Functional Description • True dual-ported memory cells that enable simultaneous reads of the same memory location ■ 8K x 8 organization CY7C144 ■ 8K x 9 organization (CY7C145) ■ 0.65-micron complementary metal oxide semiconductor


    Original     		PDF CY7C144 CY7C144) CY7C145) 65-micron CY7C144 CY7C145 CY7C144/5 a7r transistor transistor a4L A12L transistor A0LA A12L

    transistor a4L

    Abstract: a7l transistor 55AX A12L CY7C144 CY7C145 CY7C CY7C144-15AI
    Text: CY7C144 CY7C145 8K x 8/9 Dual-Port Static RAM with SEM, INT, BUSY Features Functional Description • True dual-ported memory cells that enable simultaneous reads of the same memory location ■ 8K x 8 organization CY7C144 ■ 8K x 9 organization (CY7C145)


    Original     		PDF CY7C144 CY7C145 CY7C144) CY7C145) 65-micron transistor a4L a7l transistor 55AX A12L CY7C145 CY7C CY7C144-15AI

    CY7C136-55JC

    Abstract: No abstract text available
    Text: CY7C132, CY7C136 CY7C136A, CY7C142, CY7C146 2K x 8 Dual-Port Static RAM Functional Description Features • True dual-ported memory cells that enable simultaneous reads of the same memory location ■ 2K x 8 organization ■ 0.65 micron CMOS for optimum speed and power


    Original     		PDF CY7C132, CY7C136 CY7C136A, CY7C142, CY7C146 CY7C132/CY7C136/CY7C136A CY7C142/CY7C146 CY7C132/CY7C136/CY7C136A; 52-Pin CY7C136-55JC

    transistor a4L

    Abstract: CY7C132 CY7C136 CY7C142 CY7C146 a7r transistor CY7C136-55NC
    Text: CY7C132, CY7C136 CY7C136A, CY7C142, CY7C146 2K x 8 Dual-Port Static RAM Features Functional Description • True dual-ported memory cells that enable simultaneous reads of the same memory location ■ 2K x 8 organization ■ 0.65 micron CMOS for optimum speed and power


    Original     		PDF CY7C132, CY7C136 CY7C136A, CY7C142, CY7C146 CY7C136, transistor a4L CY7C132 CY7C136 CY7C142 CY7C146 a7r transistor CY7C136-55NC

    CY7C136E

    Abstract: No abstract text available
    Text: CY7C131E, CY7C131AE CY7C136E, CY7C136AE 1 K / 2 K x 8 Dual-port Static RAM 1 K / 2 K × 8 Dual-port Static RAM Functional Description Features • True dual-ported memory cells, which allow simultaneous reads of the same memory location ■ 1 K / 2 K × 8 organization


    Original     		PDF CY7C131E, CY7C131AE CY7C136E, CY7C136AE 52-pin CY7C136E

    CY7C136E

    Abstract: No abstract text available
    Text: CY7C131E/CY7C131AE CY7C136E/CY7C136AE 1 K / 2 K x 8 Dual-port Static RAM 1 K / 2 K × 8 Dual-port Static RAM Features Functional Description • True dual-ported memory cells, which allow simultaneous reads of the same memory location ■ 1 K / 2 K × 8 organization


    Original     		PDF CY7C131E/CY7C131AE CY7C136E/CY7C136AE CY7C131E CY7C131AE CY7C136E CY7C136AE CY7C136Eout

    CY7C136E

    Abstract: CY7C131AE-15JXI CY7C136AE-55NXI
    Text: CY7C131E, CY7C131AE CY7C136E, CY7C136AE 1 K / 2 K x 8 Dual-port Static RAM 1 K / 2 K × 8 Dual-port Static RAM Features Functional Description • True dual-ported memory cells, which allow simultaneous reads of the same memory location ■ 1 K / 2 K × 8 organization


    Original     		PDF CY7C131E, CY7C131AE CY7C136E, CY7C136AE CY7C131E CY7C136E CY7C136AE CY7C131AE-15JXI CY7C136AE-55NXI

    CY7C131E-55

    Abstract: N5210 30380 CY7C136E
    Text: CY7C131E, CY7C131AE CY7C136E, CY7C136AE 1 K / 2 K x 8 Dual-port Static RAM 1 K / 2 K × 8 Dual-port Static RAM Features Functional Description • True dual-ported memory cells, which allow simultaneous reads of the same memory location CY7C131E / CY7C131AE / CY7C136E / CY7C136AE are


    Original     		PDF CY7C131E, CY7C131AE CY7C136E, CY7C136AE CY7C131E CY7C136E CY7C136AE CY7C131E-55 N5210 30380

    CY7C136E-55NXC

    Abstract: CY7C131E-55 cy7c136e CY7C131E-15NXI CY7C136AE-55NXI
    Text: CY7C131E, CY7C131AE CY7C136E, CY7C136AE 1 K / 2 K x 8 Dual-port Static RAM 1 K / 2 K × 8 Dual-port Static RAM Features Functional Description • True dual-ported memory cells, which allow simultaneous reads of the same memory location ■ 1 K / 2 K × 8 organization


    Original     		PDF CY7C131E, CY7C131AE CY7C136E, CY7C136AE CY7C136E-55NXC CY7C131E-55 cy7c136e CY7C131E-15NXI CY7C136AE-55NXI

    Untitled

    Abstract: No abstract text available
    Text: CY7C007A16 K x 8 Dual-Port Static RAM CY7C006A 16 K × 8 Dual-Port Static RAM 16 K × 8 Dual-Port Static RAM Features • Expandable data bus to 16 bits or more using Master/Slave chip select when using more than one device ■ On-chip arbitration logic ■


    Original     		PDF CY7C007A16 CY7C006A CY7C006A) 35-micron

    Untitled

    Abstract: No abstract text available
    Text: CY7C007A16 K x 8 Dual-Port Static RAM CY7C006A 16 K × 8 Dual-Port Static RAM 16 K × 8 Dual-Port Static RAM Features • Expandable data bus to 16 bits or more using Master/Slave chip select when using more than one device ■ On-chip arbitration logic ■


    Original     		PDF CY7C007A16 CY7C006A CY7C006A) 35-micron

    CY7C09099V

    Abstract: No abstract text available
    Text: CY7C09079V/89V/99V CY7C09179V/89V/99V CY7C09099V CY7C09179V 3.3 V 32K/128K x 8/9 Synchronous Dual-Port Static RAM 3.3 V 32 K/64 K/128 K × 8/9 Synchronous Dual-Port Static RAM Features • True Dual-Ported memory cells which enable simultaneous access of the same memory location


    Original     		PDF CY7C09079V/89V/99V CY7C09179V/89V/99V CY7C09099V CY7C09179V 32K/128K K/128 CY7C09179V) CY7C09099V) CY7C09099V

    Untitled

    Abstract: No abstract text available
    Text: CY7C138AV CY7C139AV CY7C144AV CY7C145AV CY7C006AV CY7C016AV CY7C007AV CY7C017AV 3.3 V 8 K / 16 K x 8 Dual-Port Static RAM CY7C144AV CY7C006AV 3.3 V 8 K / 16 K × 8 Dual-Port Static RAM 3.3 V 8 K / 16 K × 8 Dual-Port Static RAM Features • True dual-ported memory cells which allow simultaneous


    Original     		PDF CY7C138AV CY7C139AV CY7C144AV CY7C145AV CY7C006AV CY7C016AV CY7C007AV CY7C017AV CY7C006AV

    CY7C09279V

    Abstract: CY7C09389V-9AI
    Text: CY7C09269V/79V/89V CY7C09369V/89V 3.3 V 16 K / 32 K / 64 K x 16 / 18 Synchronous Dual-Port Static RAM 3.3 V 16 K / 32 K / 64 K × 16 / 18 Synchronous Dual-Port Static RAM Features • True dual-ported memory cells that allow simultaneous access of the same memory location


    Original     		PDF CY7C09269V/79V/89V CY7C09369V/89V CY7C09269V/369V) CY7C09279V) CY7C09289V/389V) CY7C09279V CY7C09389V-9AI

    Untitled

    Abstract: No abstract text available
    Text: CY7C09269V/79V/89V CY7C09369V/89V 3.3 V 16 K / 32 K / 64 K x 16 / 18 Synchronous Dual-Port Static RAM 3.3 V 16 K / 32 K / 64 K × 16 / 18 Synchronous Dual-Port Static RAM Features • ■ True dual-ported memory cells that allow simultaneous access of the same memory location


    Original     		PDF CY7C09269V/79V/89V CY7C09369V/89V CY7C09269V/369V) CY7C09279V) CY7C09289V/389V)

    Untitled

    Abstract: No abstract text available
    Text: CY7C09269V/79V/89V CY7C09369V/89V 3.3 V 16 K / 32 K / 64 K x 16 / 18 Synchronous Dual-Port Static RAM 3.3 V 16 K / 32 K / 64 K × 16 / 18 Synchronous Dual-Port Static RAM Features • True dual-ported memory cells that allow simultaneous access of the same memory location


    Original     		PDF CY7C09269V/79V/89V CY7C09369V/89V 100-pin

    CY7C09099V

    Abstract: No abstract text available
    Text: CY7C09079V/89V/99V CY7C09179V/89V/99V CY7C09089V/99V CY7C09179V/99V 3.3 V 32 K/64 K/128 K x 8/9 Synchronous Dual-Port Static RAM 3.3 V 32 K/64 K/128 K × 8/9 Synchronous Dual-Port Static RAM Features • High speed clock to data access 6.5[1]/7.5[1]/9/12 ns max.


    Original     		PDF CY7C09079V/89V/99V CY7C09179V/89V/99V CY7C09089V/99V CY7C09179V/99V K/128 100-pin CY7C09099V

    Untitled

    Abstract: No abstract text available
    Text: CY7C09269V/79V/89V CY7C09369V/89V 3.3 V 16 K / 32 K / 64 K x 16 / 18 Synchronous Dual-Port Static RAM 3.3 V 16 K / 32 K / 64 K × 16 / 18 Synchronous Dual-Port Static RAM Features • ■ True dual-ported memory cells that allow simultaneous access of the same memory location


    Original     		PDF CY7C09269V/79V/89V CY7C09369V/89V 100-pin

    a7l transistor

    Abstract: transistor a7p HTC one m7 a7p 18 74 HTC 612 a7p18 LTQY UF 730 L UTC QQG1322 UM91271
    Text: UNICORN MICROELECTRONICS 24E D T27ö7flS DDG13aa M T - 7^ £ ? 7-¿ 7 UM9127172 2 0 Memory Tone/Pulse Dialer Features • 32-digit redial memory ■ 20 16-digit repertory memories ■ Repertory dialing accessible by direct or indirect keyin ■ Unlimited cascaded dialing from repertory memories


    OCR Scan     		PDF QQG1322 UM9127172 32-diglt 16-diglt UM91271 16-digit 32-digit DDD1332 UM9127Ã M91271/72 a7l transistor transistor a7p HTC one m7 a7p 18 74 HTC 612 a7p18 LTQY UF 730 L UTC QQG1322

    MS6130L-70JC

    Abstract: No abstract text available
    Text: MS6130 FEBRUARY 1992 1K x 8 CMOS Dual Port SRAM FEATURES DESCRIPTION • High-speed - 55/70/90 ns The MOSEL MS6130 is a 8,192 bit dual port static random access memory organized as 1,024 words by 8 bits. It is built with MOSEL's high perofrmance twin tub CMOS process. Eight-transistor full CMOS memory cell


    OCR Scan     		PDF MS6130 MS6130 48-pin 52-pin 325mW MS6130-70PC MS6130L-70PC MS6130-90PC MS6130L-90PC MS6130L-70JC