CY7C142 Search Results

Contextual Info: CY7C1423KV18/CY7C1424KV18 36-Mbit DDR II SIO SRAM Two-Word Burst Architecture 36-Mbit DDR II SIO SRAM Two-Word Burst Architecture Features Configurations • 36-Mbit density 2 M x 18, 1 M × 36 CY7C1423KV18 – 2 M × 18 ■ 333 MHz clock for high bandwidth

Contextual Info: fax id: 5201 CY7C132/CY7C136 CY7C142/CY7C146 W CYPRESS 2Kx8 Dual-Port Static RAM Features Functional Description True Dual-Ported memory cells which allow sim ulta­ neous reads of the same mem ory location 2K x 8 organization 0.65-micron CMOS for optimum speed/power

Contextual Info: CY7C132/CY7C136 CY7C142/CY7C146 CYPRESS SEMICONDUCTOR 2K x 8 Dual-Port Static RAM Features Functional Description • 0.8-raicron CMOS for optimum speed/power • BÜSŸ output flag on CY7C132/ CY7C136; BUSY input on CY7C142/CY7C146 The CY7C132/CY 7C136/CY7C142/

CY7C132

Abstract: CY7C136 CY7C146
Contextual Info: CY7C132/CY7C136 CY7C142/CY7C146 2K x 8 Dual-Port Static RAM Features Functional Description • True Dual-Ported memory cells which allow simultaneous reads of the same memory location The CY7C132/CY7C136/CY7C142 and CY7C146 are high-speed CMOS 2K by 8 dual-port static RAMs. Two ports

CY7C1411BV18

Abstract: CY7C1413BV18 CY7C1415BV18 CY7C1426BV18
Contextual Info: CY7C1411BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 36-Mbit QDR -II SRAM 4-Word Burst Architecture Features Configurations • Separate independent read and write data ports ❐ Supports concurrent transactions ■ 300 MHz clock for high bandwidth ■

CY7C1422AV18

Abstract: CY7C1423AV18 CY7C1424AV18 CY7C1429AV18
Contextual Info: CY7C1422AV18, CY7C1429AV18 CY7C1423AV18, CY7C1424AV18 36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture Features Functional Description • 36-Mbit density 4M x 8, 4M x 9, 2M x 18, 1M x 36 ■ 300 MHz clock for high bandwidth ■ 2-word burst for reducing address bus frequency

CY7C136-55NI

Abstract: cy7c136 CY7C132 CY7C142 CY7C146 CY7C146-15NC CY7C136-25JXC CY7C136-55NC
Contextual Info: CY7C132, CY7C136 CY7C136A, CY7C142, CY7C146 2K x 8 Dual-Port Static RAM Features Functional Description • True dual-ported memory cells that enable simultaneous reads of the same memory location ■ 2K x 8 organization ■ 0.65 micron CMOS for optimum speed and power

CY7C1416AV18

Abstract: CY7C1418AV18 CY7C1420AV18 CY7C1427AV18
Contextual Info: CY7C1416AV18 CY7C1427AV18 CY7C1418AV18 CY7C1420AV18 PRELIMINARY 36-Mbit DDR-II SRAM 2-Word Burst Architecture Features Functional Description • 36-Mbit density 4M x 8, 4M x 9, 2M x 18, 1M x 36 • 250-MHz clock for high bandwidth • 2-Word burst for reducing address bus frequency

Contextual Info: CY7C1411KV18/CY7C1426KV18 CY7C1413KV18/CY7C1415KV18 36-Mbit QDR II SRAM Four-Word Burst Architecture 36-Mbit QDR® II SRAM Four-Word Burst Architecture Features Configurations Separate independent read and write data ports ❐ Supports concurrent transactions

Z1213

Abstract: CY7C132 CY7C136 CY7C146 zl12
Contextual Info: bSE » CYPRESS SEMICONDUCTOR SSÖ'lbbE 0 0 0 ^ 7 4 7 ISb I CYP CY7C132/CY7C136 CY7C142/CY7C146 CYPRESS SEMICONDUCTOR 2K x 8 Dual-Port Static RAM output enable OE . BUSY flags are pro­ vided on each port. In addition, an interrupt Functional Description Features

Contextual Info: CY7C1422AV18 CY7C1429AV18 CY7C1423AV18 CY7C1424AV18 36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture Features Functional Description • 36-Mbit density 4M x 8, 4M x 9, 2M x 18, 1M x 36 • 300-MHz clock for high bandwidth • 2-Word burst for reducing address bus frequency

Contextual Info: CY7C1422JV18, CY7C1429JV18 CY7C1423JV18, CY7C1424JV18 36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture Features Functional Description • 36 Mbit density 4M x 8, 4M x 9, 2M x 18, 1M x 36 ■ 300 MHz clock for high bandwidth ■ 2-word burst for reducing address bus frequency

Contextual Info: CY7C14161KV18, CY7C14271KV18 CY7C14181KV18, CY7C14201KV18 36-Mbit DDR II SRAM 2-Word Burst Architecture Features Functional Description • 36-Mbit Density 4M x 8, 4M x 9, 2M x 18, 1M x 36 ■ 333 MHz Clock for High Bandwidth ■ 2-word Burst for reducing Address Bus Frequency

CY7C1428AV18-250BZC

Contextual Info: CY7C1417AV18 CY7C1428AV18 CY7C1419AV18 CY7C1421AV18 36-Mbit DDR-II SRAM 4-Word Burst Architecture Features Functional Description • 36-Mbit density 4M x 8, 4M x 9, 2M x 18, 1M x 36 • 300-MHz clock for high bandwidth • 4-Word burst for reducing address bus frequency

C-136B

Contextual Info: CY7C132/CY7C136 CY7C142/CY7C146 CYPRESS 2K x 8 Dual-Port Static RAM F ea tu res F u n ctio n al D escrip tio n • 0 .8 -m icro n C M O S for optim u m speed/ pow er • A u to m atic power-down • T T L com p atib le • C ap ab le o f w ith stan d in g g re a te r th an

30l3l

Contextual Info: CY7C132/CY7C136 CY7C142/CY7C146 CYPRESS SEMICONDUCTOR F eatures F unctional D escription • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable of withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation

CY7C1416BV18

Abstract: CY7C1418BV18 CY7C1420BV18 CY7C1427BV18
Contextual Info: CY7C1416BV18 CY7C1427BV18 CY7C1418BV18 CY7C1420BV18 PRELIMINARY 36-Mbit DDR-II SRAM 2-Word Burst Architecture Features Functional Description • 36-Mbit density 4M x 8, 4M x 9, 2M x 18, 1M x 36 • 300-MHz clock for high bandwidth • 2-Word burst for reducing address bus frequency

CY7C1411BV18

Abstract: CY7C1413BV18 CY7C1415BV18 CY7C1426BV18
Contextual Info: CY7C1411BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 36-Mbit QDR -II SRAM 4-Word Burst Architecture Features Configurations • Separate independent read and write data ports ❐ Supports concurrent transactions ■ 300 MHz clock for high bandwidth ■

CY7C1412BV18-200BZI

Abstract: CY7C1412BV18-167BZI CY7C1410BV18 CY7C1412BV18 CY7C1414BV18 CY7C1425BV18
Contextual Info: CY7C1410BV18 CY7C1425BV18 CY7C1412BV18 CY7C1414BV18 PRELIMINARY 36-Mbit QDR-II SRAM 2-Word Burst Architecture Features Functional Description • Separate Independent Read and Write data ports The CY7C1410BV18, CY7C1425BV18, CY7C1412BV18 and CY7C1414BV18 are 1.8V Synchronous Pipelined SRAMs,

Contextual Info: CY7C1418AV18 CY7C1420AV18 36 Mbit DDR II SRAM Two Word Burst Architecture Features Functional Description • 36 Mbit density 2M x 18, 1M x 36 ■ 300 MHz clock for high bandwidth ■ Two word burst for reducing address bus frequency ■ Double Data Rate (DDR) interfaces 

Contextual Info: CY7C1422AV18, CY7C1429AV18 CY7C1423AV18, CY7C1424AV18 36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture Features Functional Description • 36-Mbit density 4M x 8, 4M × 9, 2M × 18, 1M × 36 ■ 300 MHz clock for high bandwidth

CY7C136-55NI

Abstract: CY7C146 idt7132 CY7C132 CY7C136 PC TO IDT7132 CY7C136-55NC
Contextual Info: CY7C132/CY7C136 CY7C142/CY7C146 2K x 8 Dual-Port Static RAM Features Functional Description • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • 2K x 8 organization • 0.65-micron CMOS for optimum speed/power • High-speed access: 15 ns

Contextual Info: CY7C1418BV18 CY7C1420BV18 36-Mbit DDR II SRAM 2-Word Burst Architecture Features Functional Description • 36-Mbit Density 2M x 18, 1M x 36 ■ 267 MHz Clock for high Bandwidth ■ 2-word Burst for reducing Address Bus Frequency ■ Double Data Rate (DDR) Interfaces 

Contextual Info: CY7C1422AV18 CY7C1423AV18 CY7C1424AV18 PRELIMINARY 36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture Features Functional Description • 36-Mbit density 4M x 8, 4M x 9, 2M x 18, 1M x 36 • 300-MHz clock for high bandwidth • 2-Word burst for reducing address bus frequency