AO17 Search Results

Contextual Info: MB88344PFV 1/2 IL16 C-MOS D/A CONVERTER 25 AO28 26 AO29 27 AO30 28 AO31 VCC 29 NC 30 VDD2 31 VSS2 32 33 AO32 34 AO33 35 AO34 36 AO35 —TOP VIEW— AO6 43 18 AO21 AO7 44 17 AO20 AO8 45 16 AO19 AO9 46 15 AO18 AO10 47 14 AO17 AO11 48 13 AO16 AO15 12 19 AO22

Contextual Info: 3 7 b f i 522 DD 2 0 1 1 E S 47 H P L S B a i GEC P L E S S E Y FEBRUARY 1994 PRELIMINARY INFORMATION S E M I C O N D U C T O R S DS2464 - 4.9 MV6639 POCSAG DECODER Supersedes November 1992 edition - DS2464 - 3.3 The MV6639 POCSAG decoder is capable of operating

Contextual Info: a WS256K32-XXX WHITE MICROELECTRONICS 256Kx32SRAM MODULE P R E L IM IN A R Y * FEATURES • Access Times 20, 25, 35ns 2 V D a ta Retention devices available ■ MIL-STD-883 Compliant Devices Available Commercial, Industrial and M ilitary Temperature Range

Contextual Info: C3 WMS256K16-XXX WHITE MICROELECTRONICS 256KX16 M O NO LITHIC SRAM FEATURES • Access Times 17, 20, 25, 35ns ■ MIL-STD-883 Compliant Devices Available ■ Packaging • 44 pin Ceramic SOJ Package 102 • 44 lead Ceramic Ratpack (Package 208) ■ Organized as256Kx16

Contextual Info: WHITE MICROELECTRONICS 256Kx4 SRAM WPS256K4-XRJX PRELIMINARY# PLASTIC PLUS FEATURES • Access Times 15,17, 20nS PIN CONFIGURATION TOP VIEW NCC 1 A3 [ I 2 A2 C 3 A ir 4 AOC 5 S5C 6 i/oí C 7 vccC 8 v ss C 9 1/02 d 10 W E □ 11 A17 m 12 A 1 6 d 13 A 1 5 C 14

Contextual Info: a WS512K16-XXX WHITE /MICROELECTRONICS 512Kx 1 6 SRAM MODULE ADVANCED* FEATURES • Access Tim es 17, 20, 25, 35ns ■ D ata I/O C om p atible w ith 3.3V devices ■ M IL-S TD -883 C om pliant D evices A v a ila b le ■ 2V M inim um D ata R etention fo r b a tte ry back up o p eratio n

Contextual Info: a W MS256K16-XXX WHITE /MICROELECTRONICS 256Kx16 MONOLITHIC SRAM , SM D 5962-96902 FEATURES • A ccess Tim es 17, 20, 25, 35ns ■ 2V M in im u m Data R etention fo r b a tte ry back up operation ■ M IL-S TD -883 C o m p lia n t Devices A v a ila b le ■ C om m ercial, Industrial and M i lita r y T e m p e ra tu re Range

Contextual Info: PRELIMINARY IDT7MPV4160 IDT7MPV4161 IDT7MPV4162 IDT7MPV4162A IDT7MPV4163 64K/128K/256K/512K x 36 SYNCHRONOUS SRAM MODULE FAMILY FEATURES: DESCRIPTION: • Pin compatible flow-through synchronous SRAM module family • 144 position SO-DIMM Connector, - Berg part number: 61178

ICE 47E

Abstract: oSC-70 7MB4066
Contextual Info: INTE G R A T E D DEV ICE 47E D B 4355 7 7 1 O Q I Q I G b b B I I D T PRELIMINARY IDT7MB4065 IDT7MB4066 256K x 20/256K x 16 BiCMOS/CMOS STATIC RAM MODULES - q é r Z ' i - IM Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 256K x 20 /256 K x 16 B iC M O S /C M O S static

pv41

Contextual Info: PRELIMINARY IDT7MPV4160 IDT7MPV4161 IDT7MPV4162 IDT7MPV4162A IDT7MPV4163 64K/1 28K/256K/51 2K x 36 SYNCHRONOUS SRAM MODULE FAMILY FEATURES: DESCRIPTION: • Pin compatible flow-through synchronous SRAM module family • 144 position SO-DIMM Connector, - Berg part number: 61178

4045S

Abstract: 4B2S D14447
Contextual Info: INTEGRATED D E V I C E _ bflE D gW N • 4Û2 S771 0 D14447 ITI ■ 256Kx 32 BiCMOS/CMOS STATIC RAM MODULE jd t IDT IDT7MP4045 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 8 megabit static RAM module The IDT7MP4045 is a 256K x 32 static RAM module

GG1Q

Abstract: GG1Q171
Contextual Info: INTEGRATE» DEVICE m 47E D Mâ2S7?l GG1Q171 b • IDT IDT7M4068 IDT7MB40G8 256K x 8 BiCMOS/CMOS STATIC RAM MODULE Integrated D evice T ech no logy, Inc. FEATURES: DESCRIPTION: • High density 2 megabit C M O S static RAM module • Equivalent to the JE D E C standard for future monolithic

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: Ordering number : ENN *6526 CMOS 1C LC74731W,74732W ISAflYO l On-Screen Display Controller Preliminary Overview The LC74731W and LC74732W are on-screen display CMOS ICs that display characters and patterns on a TV screen under the control of a microcontroller. These ICs

uP6163

Abstract: AN12947A rt8206 ALC889X W25X16AVSSIG MX25L1605AM2C varistor Q20 K 275 SLG8SP585V RT8206B up6111
Contextual Info: 5 4 3 2 1 +VDDIO_CLK U21 +3V +1.05V +3V_CLK L28 C303 C293 C297 C299 C298 C285 4.7U/10V_8 4.7U/10V_8 .1u/16V_4.1u/16V_4.1u/16V_4.1u/16V_4 C302 .1u/16V_4 XTAL_OUT XTAL_IN R199 10 CLK_ICH_14M 33_4 Place the 33 ohm resistors close to the CK 505 C CPU_SEL CLK_SDATA

T3168

Abstract: ATT ORCA fpga gc 5.5V .22f 207 525s ATT1C05 op3120 D1313 oa259 ATT ORCA fpga architecture OA154
Contextual Info: T i T HELEC I t4E D C • DuSGOPti 001G23D 3fi2 ■ A T T E AT&T Advance Data Sheet February 1993 M icroelectronics Optimized Reconfigurable Cell Array (ORCA) Series Field-Programmable Gate Arrays Features The PLCs and PICs also contain routing resources

Contextual Info: EDI816256CA •lì Hi-R£LiASIÜTY PRODUCT 256Kx16 MONOLITHIC SRAM FEATURES The EDI816256CA is a 4 megabit M onolithic CMOS Static RAM. The EDI816256CA uses 16 common input and output lines and has an output enable pin which operates faster than address access

Contextual Info: WHITE /M IC R O E L E C T R O N IC S W M S 2 5 6 K 1 6 -X X X 256Kx16 MONOLITHIC SRAM FEATURES • A ccess Times 17, 20, 25, 35ns Data I/O Compatible w ith 3.3V devices ■ MIL-STD-883 Compliant Devices Available 2V Minim um Data Retention for battery back up operation

Contextual Info: a WMF256K8-XXX5 M/HITE /MICROELECTRONICS 256Kx8 MONOLITHIC FLASH FEATURES • A c c e s s T i m e s o f 7 0, 9 0 , 1 2 0 , 1 5 0 n s ■ O rg a n iz e d as 2 5 6 K x 8 ■ P a cka g in g : ■ C o m m e r c ia l, I n d u s tr ia l a n d M i l i t a r y T e m p e r a t u r e R a nges

Z80000

Contextual Info: p ii il P ro d u c t S p e c ific a tio n October 1988 Z80,000 CPU FEATURES • Full 32-bit architecture and implementation ■ 4G billion bytes of directly addressable memory in each of four address spaces ■ Linear or segmented address space ■ Virtual memory management integrated with CPU

AO11

Abstract: AO36 M62370GP AO-21
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: t t W MS256K16-XDLX WHITE / M I C R O E L E C T R O N I C S 256Kx16 MONOLITHIC SRAM, SMD 5962-96902 pending PRELIMINARY * FEATURES • Access Times 17, 20, 25, 35nS Data I/O Compatible w ith 3.3V devices ■ MIL-STD-883 Com pliant Devices A vaila b le 2V M inim um Data Retention for battery back up operation

GV1 M10

Abstract: TPC842 A7 B14
Contextual Info: tlX IU N X XC5200 Field Programmable Gate Arrays August 6,1996 Version 4.01 Preliminary Product Specification Features • Fully supported by XACTstep Development System - Includes complete support for XACT-Performance™, X-BLOX™, Unified Libraries, Relationally Placed

7A4L

Abstract: WS256K8
Contextual Info: T T WS256K8-XCX I/WHITE /MICROELECTRONICS 256Kx8 SRAM MODULE FEATURES FIG. 1 • Access T im e s 55 to 120nS PIN CONFIGURATION TOP VIEW ^ 32 n vcc 31 J A 15 30 j A 17 29 J W E 28 1 A 13 27 ;] as 26 J A9 25 H A11 24 □ OE S ta n d a rd M ic ro c irc u it D ra w in g , 5962-93157