APT10M30 Search Results

Q100A

Abstract: APT10M25BNR
Contextual Info: A d v a n ced P o w er Te c h n o l o g y APT10M25BNR 100V APT10M30BNR 100V POWER MOS IV' 75A 75A 0.025Í1 0.030Q AVALANCHE RATED N -C H A N N E L ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIM UM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: A dvanced P o w er Te c h n o l o g y APT10M25BNFR APT10M30BNFR POWER MOS IV‘ 100V 75A 0.025Q 100V 75A 0.030Q AVALANCHE RATED FREDFET N -C H A NN EL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.

APT10M30AVR

Contextual Info: APT10M30AVR 65A 0.030Ω 100V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

kd 503

Contextual Info: ADVANCED PO W ER Te c h n o l o g y " o D O APT10M25BNR 100V APT10M30BNR 100V S 75A 0.02511 67A 0.030Q POWER MOS IV UIS RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DS= All Ratings: T c = 2 5 °C unless otherwise specified.

Contextual Info: A dvanced P o w er Tec h n o lo g y APT10M25BNFR APT10M30BNFR POWER MOS IVe 0.025a 100V 75A 100V 75A 0.030Í2 AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: A dvanced P o w er Te c h n o l o g y O D O APT10M25BNR 100V APT10M30BNR 100V S las’jFER mos l ’a 75A 0.0250 75A 0.030Í2 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIM UM RATINGS Sym bol V DSS 'd All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: A dvanced P ow er Tec h n o lo g y APT10M25BNFR APT10M30BNFR 2 * WER MOS n i 100V 75A 100V 75A 0.025Q 0.030Q AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS «D Ail Ratings: Tc = 25°C unless otherwise specified.

APT10M25BNR

Contextual Info: A dvanced P o w er Te c h n o l o g y O D APT10M25BNR 100V APT10M30BNR 100V O s POWER MOS IV® 75A 0.025Í2 75A 0.030Í2 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'dm V GS ^GSM PD T J’ T STG All Ratings: Tc = 25°C unless otherwise specified.

SK 10 BAT 065

Abstract: 0/SK 10 BAT 065 20/SK 10 BAT 065
Contextual Info: A dvanced P o w er Te c h n o lo g y O D APT10M25BNR 100V APT10M30BNR 100V O s POWER MOS IV® 75A 0.025a 75A 0.030Ü AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd *DM VGS V GSM PD t j ,t stg All Ratings: Tc = 25°C unless otherwise specified.

TO-204AE Package

Abstract: APT10M30
Contextual Info: APT10M30AVR 100V 65A 0.030W POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

APT10M25BNFR

Abstract: N mos 100v 100A
Contextual Info: A d van ced P o w er Te c h n o l o g y APT10M25BNFR APT10M30BNFR 100V 75A 0.025a 100V 67A 0.030Ü FAST RECOVERY MOSFET FAMILY POWER MOS IV N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol 100 Continuous Drain Current 'd @ Tc

5017BVR

Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
Contextual Info: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on

APT6015LVR

Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
Contextual Info: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on