APT40M35PVR Search Results
APT40M35PVR Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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APT40M35PVR | Advanced Power Technology | N-Channel enhancement mode power MOSFET | Original | 37.13KB | 2 |
APT40M35PVR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: APT40M35PVR 400V 89A 0.035Ω POWER MOS V P-Pack Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also |
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APT40M35PVR | |
Contextual Info: APT40M35PVR 400V W 89A 0.035W POWER MOS V P-Pack Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also |
Original |
APT40M35PVR Repetitive14 | |
APT10026JN
Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
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MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR | |
Contextual Info: • R A dvanced W .\A A PT40 M35 PV R pow er Te c h n o lo g y " 400v 89a o.o35w POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also |
OCR Scan |
APT40M35PVR | |
5017BVR
Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
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Original |
MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60 | |
APT6015LVR
Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
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Original |
MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR | |
APT5012Contextual Info: Standard Power MOSFETs Power MOS V MOSFET Technology. is a patented selfaligned interdigitated open cell structure with improved switching and RDS ON advantages over our previous MOS IV® generation and over industry standard closed cell devices. Feature |
Original |
APT5019HVR APT5026HVR APT4014HVR APT4018HVR O-258 APT20M42HVR APT1001R1AVR APT6032AVR APT6035AVR APT5012 |