APT5010JVFR Search Results
APT5010JVFR Price and Stock
Microchip Technology Inc APT5010JVFRMOSFET N-CH 500V 44A ISOTOP |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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APT5010JVFR | Tube | 7 | 1 |
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APT5010JVFR | Tube | 26 Weeks | 20 |
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APT5010JVFR |
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APT5010JVFR | Bulk | 20 |
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APT5010JVFR | Tube | 26 Weeks |
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APT5010JVFR |
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APT5010JVFR | 1 |
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APT5010JVFR | Tube | 9 |
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APT5010JVFR | 20 |
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APT5010JVFR |
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APT5010JVFR Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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APT5010JVFR |
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Power MOS V FREDFET | Original |
APT5010JVFR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: APT5010JVFR A dvanced P ow er Te c h n o lo g y ' 500V 44A 0.100a POWER MOS V FREDFET P m Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™ |
OCR Scan |
APT5010JVFR OT-227 APT5010JVFR MIL-STD-750 OT-227 | |
Contextual Info: APT5010JVFR 44A 0.100Ω 500V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT5010JVFR OT-227 E145592 | |
Contextual Info: • R A dvanced W .\A APT5010JVFR pow er Te c h n o lo g y " 500v POWER MOS V 44a 0.1 o o q FREDFET P ow er M OS V is a new generation o f high voltage N -C hannel enhancem ent m ode pow er M O S FE Ts. This new technolo gy m inim izes the JF E T effect, |
OCR Scan |
APT5010JVFR OT-227 E145592 | |
Contextual Info: APT5010JVFR A dvanced P o w er Te c h n o l o g y 500V POWER MOSV 44A 0.100n FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™ |
OCR Scan |
APT5010JVFR OT-227 MIL-STD-750 | |
sm 126 ao 570Contextual Info: A d P O T e v a W c n E h c e A d P T 5 1 J V F R R n o l o g y 5 POWER MOS V v 4 4 0 . 1 a o o q FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
OCR Scan |
O-264 APT5010JVFR E145592 sm 126 ao 570 | |
nt 6600 G
Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
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OCR Scan |
APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR nt 6600 G APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr | |
catalog mosfet Transistor smd
Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
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APT10026JN
Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
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MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR | |
5017BVR
Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
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MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60 | |
mj 1504 transistor equivalent
Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208
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APT6015LVR
Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
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MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR | |
APT100GF60LR
Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
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