ATT22Q Search Results

TT220

Abstract: transistor t220 BUZ71 dc to ac TT 220
Contextual Info: {ZT SGS-THOMSON BUZ71 ^ 7 # ,. M g[M>g[L[I(g¥[Mg [M(gi_ BUZ71FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS(on) ^d " BUZ71 BUZ71FI 50 V 50 V 0.1 Q 0.1 0 14 A 12 A • VERY FAST SW ITCHING • LOW DRIVE ENE R G Y FOR EASY DRIVE,

3Na60

Contextual Info: *57 SGS-THOMSON 3NA60 S T P 3 N A6 0 F I stp iL iO M iQ £ I N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP3NA60 STP3N A60FI V dss R DS(on) Id 600 V 600 V < 4 a <4 a 2.9 A 2.1 A . T Y P IC A L R Ds (on) = 3.3 Q m ± 30V G A TE TO S O U R C E V O LTA G E R ATING

7NA60

Contextual Info: *57 SGS-THOMSON 7NA60 S T P 7 N A6 0 F I stp iL iO M iQ £ I N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP7N A 60 STP7NA60FI • • . ■ ■ . ■ V dss R DS(on) Id 600 V 600 V < 1 a < 1 a 7.2 A 4 .4 A T Y P IC A L RDS(on) = 0.92 Q ± 30V G A TE TO S O U R C E V O LTA G E R ATING

DD 127 D TRANSISTOR

Abstract: JIS B 0409
Contextual Info: *57 TYPE STP30N06 STP30N06FI • • . ■ ■ . ■ ■ SGS-THOMSON s t p 3 on o6 ilLiCTIIMDe STP30N 06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss R DS on Id 60 V 60 V < 0 .0 5 a < 0 .0 5 a 30 A 19 A T Y P IC A L RDS(on) = 0.045 Q A V A LA N C H E R U G G ED T E C H N O LO G Y

tt2201

Contextual Info: *57 SGS-THOMSON stpsnaso iL iO M iQ £ I S T P 8 N A5 0 F I N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP8NA50 STP8N A50FI V dss R DS(on) Id 500 V 500 V < 0.85 a < 0.85 a 8 A 4.5 A . T Y P IC A L R Ds (on) = 0.7 Q m ± 30V G A TE TO S O U R C E V O LTA G E R ATING

Contextual Info: SGS-THOMSON VB921Z VB921ZFI Rl M[EL[iOT KS HIGH VOLTAGE IGNITION COIL DRIVER PO W ER IC ADVANCE DATA . . • . NO EXTERNAL COMPONENT REQUIRED INTEGRATED HIGH VOLTAGE CLAMP COIL CURRENT LIMIT INTERNALLY SET HIGH RUGGEDNESS DESCRIPTION The VB921Z and VB921ZFI are monolithic high

RF540

Abstract: IRF540 IRF540FI b17a q02c IRF540 application IRF541 IRF541FI IRF542 IRF542FI
Contextual Info: r z 7 SCS-TH O M SO N ^7# R{flO IS i[L[i®irMD©i S G S -T H 0M S 0N TYPE IRF540 IRF540FI IRF541 IRF541FI IRF542 IRF542FI IRF543 IRF543FI V dss 100 V 100 V 80 V 80 V 100 V 100 V 80 V 80 V ^DS on 0.077 fi 0.077 fi 0.077 fi 0.077 fi 0.100 fi 0.100 fi 0.100 Q

BUZ11

Abstract: BUZ11FI buz11 1d BUZ11F 2M236 C3621 BUZ11 avalanche
Contextual Info: = 7 SGS-THOMSON kT # BUZ11 B U Z 1 1 FI RjlOICœiilLKB'f IBOMDei N - C HANNEL EN H A N C EM EN T MODE PO W ER MOS TR A N SISTO R S TYPE BU Z11 BU Z11FI • . . . . . . V dss R DS on Id 50 V 50 V < 0 .0 4 Q. < 0 .0 4 Q. 36 A 21 A TY P IC A L R D S (on) = 0.03

T410

Abstract: Triac T435 triac 800V 1A WT-410
Contextual Info: f= 7 ^ •T # S G S -T H O M S O N T 4 io M E E S m iig T O iM tg S _ T 4 3 5 HIGH PERFORMANCE TRIACS FEATURES 4A • V drm = 400 V to 800 V . SENSITIVE GATE : lGT< 1 0 m A . HIGH COMMUTATION : dl/dt c>3.5 A/ms ■ ITRM S = DESCRIPTION The T410 / T435 high voltage TRIAC Families

Contextual Info: *57 SGS-THOMSON s tp 2 5 n o6 ilLiCTIIMDe STP25N 06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP25N 06 S TP25N 06FI • • . ■ ■ . ■ ■ V dss R DS on Id 60 V 60 V < 0.065 a < 0.065 a 25 A 16 A T Y P IC A L RDS(on) = 0.048 Q A V A LA N C H E R U G G ED T E C H N O LO G Y

Triac T405

Abstract: M/T405
Contextual Info: / = 7 SGS-THOMSON ^ 7# Ik LHÈTTMIiDgi T405 HIGH PERFORMANCE TRIACS FEATURES 4A • V drm = 400 V to 600 V . SENSITIVE GATE: IGt < 5 mA ■ LOW Ih < 10 mA ■ ITRM S = DESCRIPTION The T405 high voltage TRIAC Families are high performance planar diffused PNPN devices

IRF74Q

Abstract: IRF 740 N transistor irf 740 IRF740FI IRF743 IRF 740 IRFJ40 IRF741 ci 741 IRF740
Contextual Info: 3GE P • 7^2^237 G02cîô01 T ■ [Z T S G S -T H O M S O N 4 7#b S G S-THOMSON TYPE IRF740 IRF740FI IRF741 IRF741FI IRF742 IRF742FI IRF743 IRF743FI Vqss 400 V 400 V 350 V 350 V 400 V 400 V 350 V 350 V 'T - 'S eî - \ 3 IRF 740/FI-741/FI IRF 742/FI-743/FI

TT220

Abstract: TP15N05L
Contextual Info: SGS-THOMSON ^ 7/L MTP15N05L/FI MTP15N06L/FI RfflD [s3©[ilLl gTI[SΩlÎ!!lDÊi N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS ^D S(on MTP15N05L MTP15N05LFI 50 V 50 V 0.15 fi 0.15 Q 15 A 10 A MTP15N06L MTP15N06LFI

RE540

Abstract: stp7n
Contextual Info: SGS-THOMSON * 5 7NA40 STP7N A40FI stp iLiO M iQ £I 7 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP7NA40 STP7N A40FI • • . ■ ■ . ■ V dss R DS(on) Id 400 V 400 V < 1a < 1a 6.5 A 4.1 A T Y P IC A L RDS(on) = 0.82 Q ± 30V G A TE TO S O U R C E V O LTA G E R ATING

MTP3N6

Contextual Info: r r z S G S -T H O M S O N *7# » » E tL ie T O K f ! MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS ^D S on M TP3N60 M TP3N60FI 600 V 600 V 2.5 ß 2.5 Q 3 A 2.5 A • HIGH VO LTAG E FOR OFF-LINE APPLICATIO NS

TT220

Abstract: transistor IRF 531 IRF 530 transistor 531
Contextual Info: rZ 7 SGS-THOMSON A T Æ . IRF 530/FI-531/FI IRF 532/FI-533/FI IH D Ê IM ÎIlL U tô M K O D È S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA • • • • TYPE V DSS R DS on IRF530 IRF530FI 100 V 100 V 0.16 0.16 IRF531 IRF531FI

Contextual Info: *57 SGS-THOMSON iL iO M K I stp36Nosl STP36N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP36N05L STP36N 05LFI • • . ■ ■ . ■ ■ . V dss R DS on Id 50 V 50 V < 0.04 a < 0.04 a 36 A 21 A T Y P IC A L RDS(on) = 0.033 Q A V A LA N C H E R U G G ED T E C H N O LO G Y

rf620

Contextual Info: *57 IR F 620 IR F 6 2 0 F I S G S -T H O M S O N iL iO M K I N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IR F 620 IR F 620 F I 1 . 1 . V dss RDS on Id 200 V 200 V < 0 .8 £2 < 0.8 a 6 A 4 A T Y P IC A L R Ds(on) = 0.55 A V A LA N C H E R U G G ED T E C H N O LO G Y

36N06

Contextual Info: *57 SGS-THOMSON iL iO M K I stp36N06L STP36N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP36N05L STP36N 05LFI • • . ■ ■ . ■ ■ . V dss R DS on Id 60 V 60 V < 0.04 a < 0.04 a 36 A 21 A T Y P IC A L RDS(on) = 0.033 Q A V A LA N C H E R U G G ED T E C H N O LO G Y

OT 306

Contextual Info: *57 SGS-THOMSON s t p 3 6 n o6 STP36N 06FI ilLiCTIIMDe N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP36N06 STP36N06FI • • . ■ ■ . ■ ■ V dss R DS on Id 60 V 60 V < 0 .0 4 a < 0 .0 4 a 36 A 21 A T Y P IC A L RDS(on) = 0.03 Q A V A LA N C H E R U G G ED T E C H N O LO G Y

Contextual Info: *57 SGS-THOMSON s tp 3 0 n 0 5 ilLiCTIIMDe STP30N 05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP30N 05 S TP30N 05FI • • . ■ ■ . ■ ■ V dss R DS on Id 50 V 50 V < 0.05 a < 0.05 a 30 A 19 A T Y P IC A L RDS(on) = 0.045 Q A V A LA N C H E R U G G ED T E C H N O LO G Y

p15n05

Abstract: C5443 5N05L 5N05 15N05L 15n05 CS4420 P15N05L
Contextual Info: *57 SGS-THOMSON stp 15no5l ilLiCTIIMDe S T P 1 5 N 05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S T P 15N05L S T P 15N05LFI • . . ■ ■ . ■ ■ V dss R DS on 50 V 50 V < 0.15 a < 0.15 a Id 15 10 A A T Y P IC A L RDS(on) = 0.115 £2