BC 110 Search Results

TRANSISTOR BC 208

Abstract: TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187
Contextual Info: BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC 183L 184 184L 186 187 179 181 182 182L 183 172 173 174 177 178 167 168 169 170 171 135 154 157 158 159 114 132 147 148 149 107 108 109 110 113 •c m Z Z Z “0 -0 "0 "0 2

SDT 9202

Abstract: bdx 338 BU 450 bdx
Contextual Info: ALPHANUMERIC BC 107. .73 BC 108. .73 BC 109. .73 BC 170. .74 BC 171. .74 BC 172. .74 BC 173. .74 BC 174. .74 BC 177. .73 BC 178. .73 BC 179. .73 BC 190. .73 BC 237. .74 BC 238. .74 BC 239. .74 BC 250. .74

T092A

Abstract: transistors BC 459
Contextual Info: SIGNAL TYPES ptot * T Y P E NPN BC 170 BC 171 BC 172 BC 173 BC 174 BC 237 BC 238 PNP (W) 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 B C £39 BC BC BC BC BC BC BC 413 414 546 547 548 549 550 BC BC BC BC BC

bc 945

Abstract: BC 945 p BC 948 BC 937 BD 139 N ic 933 bd BD135N bu110 bd 3055 bd135
Contextual Info: FA - Bauelementeinformation VT Niederfrequenztransistoren, nach Bauformen geordnet Transistoren im TO-92-Gehäuse Typ o NPN PNP BC 182 BC 184 BC212 BC214 BD 237 BC238 BC239 BC 307 BC 308 BC 309 BC 327 BC 328 BC 337 BC 338 BC 414 BC 416 BC 546 BC 548 BC 549

Contextual Info: SPECIFICATION d bc ALR1 OFF A1Md A1LO A1LH LO-1 d bc d bc d bc bc d bc d bc bc d bc d bc bc d bc d bc d a d bc bc d a d bc d a d d Status set Off Mode Low Low/High Low Temperature Stability: 50 ppm/°C ON A1HI Alarm 1 set On Alarm 1 High -999. Alarm 1 Low Value

BCD RTD

Abstract: BCD40 RTD20 BCD20 RTD08 RTD10 RTD12 RTD15 RTD25 RTD30
Contextual Info: BCD RTD 100mA SILICON CARTRIDGE RECTIFIERS SMALL SIZE MOLDED PACKAGE PRV 8,000 TO 60,000 VOLTS FAST RECOVERY RTD SERIES LOW LEAKAGE Peak Reve rse V olta ge PRV (V olts ) EDI Type Number BC D08 BC D10 BC D12 BC D15 BC D20 BC D25 BC D30 BC D35 BC D40 BC D45

transistors BC 23

Abstract: 14 SOT-23 sot-23 ce 110 sot 23 SOT-23 BSS sot-23 npn BCW60 BCW65 BCX41 BCX55
Contextual Info: AF transistors M axim um ratings PNP = P NPN = N V Kdeo BC 817 BC 818 BC 846 BC 847 BC 848 BC 849 BC 850 N N N N N N N BC 807 BC 808 BC 856 BC 857 BC 858 BC 859 BC 860 P P P P P P P BCW60 BCW65 BCW 66 BCX41 BCX 54 BCX55 BCX 56 BCX 68 BCX 70 N N N N N N N N

R1003

Abstract: R1002 fptn R1003 diode 1SBN 05 0100 R1002 1sbn contactor coils r1004 R0003 1SBN 05 0200
Contextual Info: Surge Suppressors for Contactor Coils Ordering Details SB7610C3 For contactors BC 9 . BC 30, and KC TBC 9 . TBC 30 KC and TKC RT 7/. SB6186C3 BC 9 . BC 30 and KC BC 9 . BC 30 and KC 1 RV-BC 6/… SB7400C1 AE 9 . AE 110, TAE 45 . TAE 110 RV 5/50

Transistor - BC 547, CL 100

Abstract: bc 104 npn transistor transistor C 548 B bc 408 equivalent BC548BC bc 558 equivalent bc 103 transistor c 548 equivalent of BC 399 NPN Transistor TRANSISTOR C 557 B
Contextual Info: BC546*BC 547 *BC 548 *BC549. BC 550 NPN S IL IC O N TR A N S IS T O R T R A N S IS T O R N P N S IL IC IU M Compì, of BC 556 at 560 Preferred device D is p o s itif recommandé General purpose BC 546/BC 547/BC 548 Usage général BC 546/BC 547/BC 548 Low noise BC 549/BC 550

2N9303

Abstract: cbc 546 CBC 546 c 250.250 BC108A 10745 2N2483 107bbc
Contextual Info: NPN Silicon Transistors NPN Silicon Planar Transistors for low-level audio applications Common maximum ratings Type b v CFO V BVCSO V b v ebo PN PN PN PN PN PN PN PN PN PN - BC 107 BC 107 A BC 107 B BC 108 BC 108 A BC 108 B BC 108 C BC 1092 BC 109 B2 BC 109 C2

BS4 siemens

Abstract: BC 241 d0415 bc167 siemens bc169c siemens BC167 BC169B BC169 siemens Pm 90 87 168c
Contextual Info: S IE D i • Ö235b05 OGMlSlb ‘î l S « S I E G SIEMENS AKTIEN6ESELLSCHAF NPN Silicon AF Transistors BC 167 . BC 169 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 257, BC 258, BC 259 PNP Type BC BC BC

BU 808 DX

Abstract: ei50 bu 808 df 3AR 3ER 3FR BB 4130 BC860 BCV26 T3 BCV26 BCV46 BCW29
Contextual Info: /T T SGS-THOMSON SURFACE MOUNT DEVICES Ä 7# U D M iyiC TM Ö tgS GENERAL PURPOSE & INDUSTRIAL PNP GENERAL PURPOSE TRANSISTORS Vc e O 'c ptot hFE 'C LU VcBO O > Type / Iß max VCES* BC 807-16 BC 807-25 BC 807-40 BC 808-16 BC 808-25 BC 808-40 BC 856 A BC 856 B

bc 303 transistor

Abstract: BC 109 Transistor TRANSISTOR BC 109 BC 107 transistor A 107 transistor transistor bc 107 bc 107 npn transistor BC 108 transistor BC107 BC109
Contextual Info: * B C 107 * BC 108 BC 109 \IPN SILICON TRANSISTORS, EPITAXIAL PLANAR rRANSISTORS NPN SILICIUM, PLANAR EPITAXIAUX Jompl. of BC 177, BC 178, BC 179 îfc Preferred device Dispositif recommandé The NPN "plan epitaxial" transi ton BC 107, 3C 108 and BC 109 are intended for use in

1Bs sot-23

Abstract: sot-23 marking 1Fs 849B 1gs SOT-23 847C 848B 849C 850C SOT-23 marking 2Gs VC30
Contextual Info: BC 846 . BC 850 NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain 3 • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 856, BC 857, BC 858 BC 859, BC 860 PNP

fr 309

Abstract: BC307 BC177 BC179 BC 179 BC308 BC 307 bc 308 BC309 tfk 731
Contextual Info: BC 177 • BC 178 • BC179 BC 307 - BC 308 • BC 309 Silizium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen Applications: AF pre and d river stages Besondere Merkmale: Features: • BC 179, BC 309 fü r rauscharm e Vorstufen

C1507

Abstract: b 857 Q62702-C1741 sot-23 marking 1Fs sot-23 marking 3Fs 1Bs sot-23 bc 750 sot-23 MARKING CODE 1Gs C1741 C1761
Contextual Info: NPN Silicon AF Transistors ● ● ● ● ● BC 846 . BC 850 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857, BC 859, BC 860 PNP

C1741

Abstract: Q62702-C1741 bc847 1Bs sot-23 BC850 C1885 bc 846 marking 848 bc 580 BC848BC
Contextual Info: NPN Silicon AF Transistors BC 846 . BC 850 Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857, BC 859, BC 860 PNP

Contextual Info: Document 159-1 ChipInductors – 0805HSSeries 2012 Ceramic body and wirewound construction provide highest SRFs available in 0805 size. Part Number1 0805HS-030T _ BC 0805HS-060T _ BC 0805HS-080T _ BC 0805HS-120T _ BC 0805HS-150T _ BC Inductance2 (nH) 3.3 @ 250 MHz

C2310

Abstract: transistor Bc 580 c2312 TRANSISTOR bc 847 TRANSISTOR BC 135 TRANSISTOR BC c2308 BC840 transistor marking bc 8 marking 2 AW
Contextual Info: NPN Silicon AF Transistor BC 846 W . BC 850 W Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W, BC 858 W,BC 859 W,

Contextual Info: Document 102-1 ChipInductors–1008CT Series 2520 The .055″ profile makes these parts ideal for low clearance applications. Inductance2 (nH) Percent3 Tolerance 1008CT-040X _ BC 1008CT-080X _ BC 1008CT-150X _ BC 1008CT-200X _ BC 1008CT-300X _ BC 4.7 @ 50 MHz

transistor 2sc 548

Abstract: equivalent transistor bc 649 BC548BC BC660 2sC 548 B Bc 648 Bc 649 transistor bc 647 BC5481 BC649
Contextual Info: asc D • asBSbos o o o m io T M S IE G NPN Silicon Transistors BC 546 - BC 550 SIEMENS AKTIENÛESELLSCHAF . 25C 04190 D - BC 546, BC 547, BC 548, BC 549 and BC 55 0 are epitaxial NPN silicon planar transistors in TO 92 plastic packages 10 A 3 DIN 41868 . They are intended for use in AF input and

Contextual Info: Document 159-1 ChipInductors – 0805HSSeries 2012 Ceramic body and wirewound construction provide highest SRFs available in 0805 size. Part Number1 0805HS-030T _ BC 0805HS-060T _ BC 0805HS-080T _ BC 0805HS-120T _ BC 0805HS-150T _ BC Inductance2 (nH) 3.3 @ 250 MHz

Contextual Info: Document 159-1 ChipInductors – 0805HSSeries 2012 Ceramic body and wirewound construction provide highest SRFs available in 0805 size. Part Number1 0805HS-030T _ BC 0805HS-060T _ BC 0805HS-080T _ BC 0805HS-120T _ BC 0805HS-150T _ BC Inductance2 (nH) 3.3 @ 250 MHz

transistors BC 848

Abstract: VSO05561 21E sot
Contextual Info: BC 846W . BC 850W NPN Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 856W, BC 857W, BC 858W 2