BC212

Abstract: BC212B BC213 equivalent of transistor bc212 BC212BRL1 BC212BZL1
Contextual Info: BC212, BC212B, BC213 Amplifier Transistors PNP Silicon http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value Unit VCEO BC212 BC213 Collector-Base Voltage Vdc VCBO BC212 BC213 Emitter-Base Voltage Vdc 3 EMITTER –60 –45

BC212

Abstract: BC212LB
Contextual Info: BC212LB BC212LB PNP General Purpose Amplifier • This device is designed for general purpose amplifier application at collector currents to 100mA. • Sourced from process 68. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings* TC=25°C unless otherwise noted

BC212L

Abstract: CBVK741B019 F63TNR PN2222N
Contextual Info: BC212L BC212L B C E TO-92 PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from Process 68. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter

BC212CSM

Abstract: BC212C
Contextual Info: BC212CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

BC212L

Contextual Info: ST BC212L PNP Silicon Epitaxial Planar Transistor for General Purpose Amplifier On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta=25 OC Symbol

BC212DCSM

Contextual Info: BC212DCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15

BC212

Abstract: BC213 bc212b
Contextual Info: BC212, BC212B, BC213 Amplifier Transistors PNP Silicon http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value VCEO BC212 BC213 Collector-Base Voltage Vdc VCBO Vdc 3 EMITTER –60 –45 VEBO –5.0 Vdc Collector Current – Continuous

BC212C

Abstract: Transistor BC212 BC212
Contextual Info: M C C X 1 TO-92 P lastic-E n cap su late T ran sisto rs BC212,B,C TRANSISTOR PNP FEAT U R E S Pcm: 0.35W (Tamb=25'C) V ( b r )c b o : - 6 0 V H M » 0 * o r a g e junction tem perature range Tj.Tsib: -55t: to + 150TC ELECTRICAL CHARACTERISTICS (Tamb=25°C u n le s s o th e rw is e

Contextual Info: BC213L BC213L PNP General Purpose Amplifier • This device is deisgned for use as general purpose amplifiers and switches requiring collector currents to 300mA. • Sourced from process 68. • See PN200 for Characteristics. TO-92 1 1. Emitter 2. Collector 3. Base

Contextual Info: BC214L BC214L PNP General Purpose Amplifier • This device is deisgned for use as general purpose amplifiers and switches requiring collector currents to 300mA. • Sourced from process 68. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings* Ta=25°C unless otherwise noted

Contextual Info: BC214 BC214 PNP General Purpose Amplifier • This device is deisgned for use as general purpose amplifiers and switches requiring collector currents to 300mA. • Sourced from process 68. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings* Ta=25°C unless otherwise noted

BSW45A

Abstract: LOW-POWER SILICON PNP p60n 2SA1299E BC212BP
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 BC212LA BCW86 BCW86 BCW86 2SB637K 2SB710A 2SA891 2SA891 2SA891 2SB621A >= Manufacturer V(BR)CEO fr (V) (Hz) See Index Micro Elecs Semi Inc Advncd Semi

BC212L

Abstract: F63TNR PN2222N CBVK741B019
Contextual Info: BC212L BC212L B C E TO-92 PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from Process 68. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter

NPN Transistor BC548B

Abstract: transistor bc238b TP2369A t092 transistor pro-electron BCS48
Contextual Info: SPRAGUE/SEMICOND GROUP 14E D • T -U 'O I ÖS13ÖS0 □ □□ 47ei4 4 ■ SPRAGUE PROELECTRON T092 TRANSISTOR TYPES» PROELECTRON T092 TRANSISTOR TYPES Typ« No. Polarity Chip Process BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA

equivalent of transistor bc212

Abstract: bc212 marking 212 bc212 datasheet DATASHEET Transistor BC212 marking code fairchild amplifier marking code a bc 103 bc 103 transistor BC212 data
Contextual Info: Product Folder - Fairchild P/N BC212 - PNP General Purpose Amplifier Advanced Search Google Search PRODUCTS MARKETS & APPLICATIONS SUPPORT COMPANY INVESTORS MY FAIRCHILD PRODUCTS MARKETS & APPLICATIONS SUPPORT COMPANY INVESTORS MY FAIRCHILD Related Links BC212

NPN Transistor BC548B

Abstract: BC548 BC238B npn bc337-40 npn transistor
Contextual Info: ALLEGRO MICROSYSTEMS INC 14 D • 0504330 00047^4 3 ■ ALGR T~^9-0| SPRAGUE PROELECTRON T092J TRANSISTOR TYPES»! PROELECTRON T092 TRANSISTOR TYPES Typ« No. Polarity Chip Process BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA BC212LB

MLED96

Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B

TRANSISTOR BC 413

Abstract: 212B BC212B ic 4700 Transistor BC212B
Contextual Info: DISCRETE POWER & SIGNAL TECHNOLOGIES BC212B SILICON PNP SMALL SIGNAL TRANSISTOR BVCEO . . . . 50V Min hFE . . . . . . 60 (Min) @ VCE=5V, IC= 2mA ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature Operating Junction Temperature 1 2 3 C B E

equivalent of transistor bc212

Abstract: BC212 data BC212 Transistor BC212 bc212* transistor
Contextual Info: BC212 PNP Silicon Epitaxial Planar Transistor for general purpose amplifier Absolute Maximum Ratings Ta = 25 OC Parameter 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage

BC213L NATIONAL SEMICONDUCTOR

Abstract: BC213LA BC212LB BC214KC BC212L 305900 BC213L BC214 BC212K BC212KA
Contextual Info: National Sem iconductor Sem iconductors PNP Transistors P N P General Purpose Amplifiers and Sw itch es M etal C a n and E p o x y P a c k a g e REFERENCE T A B L E b v ce0 Code BV c b o <V Min BC212K 60 50 V) Min IcBO ("A ) @ V ca Min (V) 15 30 (BC212L)

BC182L complementary

Abstract: BC212L BC182 BC212 8C132 BC182L 1C10
Contextual Info: BC182 BC182L BC212 BC212L //SJSJW/SStMfS/S&SSSS/SSSSr/fS/f'SS.'SSSSS/.'YS* D E S C R IP T IO N The B C 182, BC1S2L NPN & BC212, BC212L (PNP) ÍH are complementary silicon planar epitaxial transistors for use in AF small signal amplifiers and drivers, as well as

BC183

Abstract: bc183l BC213L BC213 bc214 100MHZ NPN TRANSISTORS
Contextual Info: BC183 »L • B C 2 1 3 >L COMPLEMENTARY SILICON AF SMALL SIGNAL AMPLIFIERS & DRIVERS TO-92B The BC183, BC183L NPN & BC213, BC213L (PNP) are complementary silicon planar epitoxial transistors for use in AF small signal amplifiers and drivers, as well as for low power

BCI82

Abstract: BC212L BC212L complementary BC182 bc182l BCI82L BC21 BC212 NPN ECB
Contextual Info: l/ K U DESCRIPTION The B C 182, B ' i 82L (N PN & BC212, B C 212L (PN P) are complem entary silicon planar epitaxial transistors for use in A F small signal amplifiers and drivers, as well as for low power universal applications. Both types feature good linearity o f D C current gain.

BC213

Abstract: BC183L BC183 Small Signal Amplifiers BC213L BC184L BC213 transistor BC184 BC214 BC214L
Contextual Info: BC183 »L • B C 2 1 3 >L COMPLEMENTARY SILICON AF SMALL SIGNAL AMPLIFIERS & DRIVERS I TO-92B The BC183, BC183L NPN & BC213, BC213L (PNP) are CD I complementary silicon planar epitoxial transistors ; «i $ for use in AF small signal amplifiers and drivers,