BCV27 Search Results

BCV26

Abstract: BCV27 BCV46 BCV47
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BCV27; BCV47 NPN Darlington transistors Product data sheet Supersedes data of 1999 Apr 08 2004 Jan 13 NXP Semiconductors Product data sheet NPN Darlington transistors BCV27; BCV47 FEATURES PINNING • Medium current max. 500 mA

BCV27

Abstract: transistor af 178 npn darlington
Contextual Info: BCV27 40 V, 500mA NPN Darlington Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES A L For general AF application high collector current 3 3 C B Top View High current gain

NPN SOT23-6

Abstract: ZDT1049 DUAL NPN SOT23-6 zdt6790 fzt849 WDFN3 BCP6825 ZXTBM322 sot223 transistor sot23
Contextual Info: Zetex Device BCP6825 BCP6925 BCV27 BCW66H BCW68H BCX17 BCX19 BCX6825 BCX6916 BCX6925 FCX1047A FCX1051A FCX1147A FCX1149A FCX1151A FCX491A FCX589 FCX591A FCX617 FCX619 FCX688B FCX690B FCX717 FCX718 FCX789A FCX790A FMMT449 FMMT489 FMMT491A FMMT549 FMMT549A FMMT589

Contextual Info: i q ä l j ! i Discrete POW ER & Signal Technologies a ^ i Bi'MICDNPÜCTPR BCV27 M a rk : F F NPN Darlington Transistor T his device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05.

BCV28

Abstract: BCV27 BCV47 BCV48 FMMT38A DSA003671
Contextual Info: BCV27 BCV47 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 – SEPTEMBER 1995 ✪ FEATURES * High VCEO * Low saturation voltage COMPLEMENTARY TYPES – BCV27 – BCV28 BCV47 – BCV48 E C B PARTMARKING DETAILS – BCV27 – ZFF BCV47 – ZFG SOT23 ABSOLUTE MAXIMUM RATINGS.

SOT23 BCV 27

Abstract: fgs npn marking BCV BCV26 BCV27 BCV46 BCV47 marking BCV H
Contextual Info: BCV27, BCV47 NPN Silicon Darlington Transistors • For general AF applications 2 3 • High collector current 1 • High current gain • Complementary types: BCV26, BCV46 PNP • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type

BCV47 philips

Abstract: JJ SOT23 BCV27 BCV47
Contextual Info: • btS3*ì31 0024537 Ifl? H A P X N AMER PHILIPS/DISCRETE b?E D BCV27 BCV47 SILICON PLANAR DARLINGTON TRANSISTOR N-P-N silicon planar darlington transistor in a plastic SO T23 envelope. P-N-P complement is B C V 26/46. QUICK REFERENCE DATA BCV27 Collector-emitter voltage open base

BCV47

Abstract: BCV27 BCV26 BCV46
Contextual Info: Philips Semiconductors Product specification NPN Darlington transistors BCV27; BCV47 FEATURES PINNING • Medium current max. 500 mA PIN DESCRIPTION • Low voltage (max. 60 V) 1 base • High DC current gain (min. 20000). 2 emitter 3 collector APPLICATIONS

Contextual Info: BCV27 BCV47 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 - SEPTEMBER 1995 O FEATURES * H igh VCE0 * L o w s a tu ra tio n v o lta g e CO M PLEM ENTARY TYPES - p C BCV27 - BCV28 BCV47 - BCV48 PAR TM ARKING DETAILS - BCV27 - ZFF B C V 4 7 - ZFG SOT23

Contextual Info: BCV27 BCV47 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 - SEPTEMBER 1995 O FEATURES * HighVCE0 * Low saturation voltage COMPLEMENTARY TYPES- BCV27 - BCV28 BCV47 - BCV48 PARTMARKING DETAILS - 0w / BCV27 - ZFF BCV47-ZFG SOT23 ABSOLUTE MAXIMUM RATINGS.

Contextual Info: BCV26, BCV46 PNP Silicon Darlington Transistors 3
For general AF applications
High collector current
High current gain
Complementary types: BCV27, BCV47 NPN 2 1 Type Marking Pin Configuration BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23

BC516

Abstract: BC517
Contextual Info: Transistors For complete package outlines, refer to pages PO-1 through PO-6 Darlington Transistors Type M axim um R atings N=NPN P=PNP BCP28 BCP29 BCP48 BCP49 BCV26 BCV27 BCV28 BCV29 BCV46 BCV47 BCV48 BCV49 BSP50 BSP51 BSP52 BSP60 BSP61 BSP62 PZTA13 PZTA14

Contextual Info: BCV26 IS OBSOLETE PLEASE USE MMBTA64 BCV46 IS CURRENTLY ACTIVE BCV26 BCV46 SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 – SEPTEMBER 1995 FEATURES * Low saturation voltage COMPLEMENTARY TYPE – PARTMARKING DETAILS – E C BCV26 - BCV27 BCV46 - BCV47

BCV47

Contextual Info: BCV27 IS OBSOLETE PLEASE USE MMBT6427 BCV47 IS CURRENTLY ACTIVE BCV27 BCV47 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 – SEPTEMBER 1995 ✪ FEATURES * High VCEO * Low saturation voltage COMPLEMENTARY TYPES – BCV27 – BCV28 BCV47 – BCV48 E C

BCV27

Abstract: mark ff SC10100
Contextual Info: uc tor ‘ BCV27 Discrete POWER & Signal Technologies BCV27 M a rk : F F NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings*

bcv47 npn darlington

Abstract: Diodes BCV47 BCV47 BCV27
Contextual Info: BCV27 / BCV47 NPN Darlington Transistors for preamplifier input applications SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 C Parameter O Symbol BCV27 BCV47 BCV27 BCV47 Collector Base Voltage Collector Emitter Voltage Value 40 80 30 60 VCBO VCEO

BCV47

Contextual Info: BCV27 BCV47 SMALL SIGNAL NPN DARLINGTON TRANSISTORS • ■ ■ ■ Type Marking BCV27 FF BCV47 FG SILICON EPITAXIAL PLANAR NPN DARLINGTON TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE DARLINGTON HIGH GAIN, HIGH INPUT IMPEDANCE

transistor 102

Abstract: BCV27 BCV26
Contextual Info: BCV27 Darlington Transistor SOT-23 FEATURES .122 3.1 .118 (3.0) .016 (0.4) ♦ High collector current ♦ High current gain ♦ NPN Silicon Planar Darlington Transistor Top View .056 (1.43) .052 (1.33) 3 BCV26 is recommended. 2 .016 (0.4) .045 (1.15) .037 (0.95)

smd npn darlington bcv47

Abstract: smd npn darlington BCV27 BCV47 TYP220 100MHZ NPN TRANSISTORS smd 5v
Contextual Info: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company NPN SILICON PLANAR DARLINGTON TRANSISTORS BCV27 BCV47 PIN CONFIGURATION NPN 1 = BASE 2 = EM ITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 Marking:BCV27= FF BCV47= FG ABSOLUTE MAXIMUM RATINGS

Marking Code FGs

Contextual Info: BCV27, BCV47 NPN Silicon Darlington Transistors 3
For general AF applications
High collector current
High current gain
Complementary types: BCV26, BCV46 PNP 2 1 Type Marking Pin Configuration BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23

Contextual Info: BCV27 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)40 I(C) Max. (A)300m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.20k

BCV47

Abstract: BCV26 BCV27 BCV46
Contextual Info: BCV27, BCV47 NPN Darlington Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Version 2004-01-20 Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4

P25 PNP

Abstract: SO4401 2369 BCV27 BCV47
Contextual Info: F Z J SGS-THOMSON SURFACE MOUNT DEVICES ^ 7 # RföD [^©[I[L[i gra©K!l D O S GENERAL PURPOSE & INDUSTRIAL NPN DARLINGTONS Type VCBO v CEO •c ptot hpE @ (C 1 VCE VCE (sat @ >C ' 'B fT typ Marking max BCV27 BCV47 SO 517 (V) (V) (mA) (mW) 40 80 40 30 60

BCV26

Abstract: BCV27 BCV46 BCV47
Contextual Info: BCV26, BCV46 PNP Silicon Darlington Transistors • For general AF applications • High collector current 2 3 • High current gain 1 • Complementary types: BCV27, BCV47 NPN Type Marking Pin Configuration Package BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs