BD907 Search Results

bd907.bd908

Abstract: BD907/BD908 BD907B BD907 BD908 B0907 B0908 BD905 BD912 BD911 b0912
Contextual Info: COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS NPN BD9Q5 BD907 BD909 BD911 . designed for use in general purpose power amplifier and switching applications. FEATURES: Boca Semiconductor Corp. * Collector-Emitter Sustaining Voltage v cEo susf 45V(Min - BD905, BD906

bd908

Abstract: D908 bd909 D907
Contextual Info: r z T SGS-THOMSON Ä 7 # RülDeæi[Liero iDei BD907/909/911 BD908/910/912 COMPLEMENTARY SILICON POWER TRANSISTORS . BD908, BD909, BD910, BD911 AND BD912 SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD707, BD709, and BD711 are silicon epitaxial-base NPN power transistors in Jedec

BD907/BD908

Abstract: BD907 BD907 equivalent BD908 164L4 BD-908 BD910 BD908 AT MICROELECTRONICS BD709 BD911
Contextual Info: BD907/909/911 BD908/910/912 COMPLEMENTARY SILICON POWER TRANSISTORS n BD908, BD909, BD910, BD911 AND BD912 SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD707, BD709, and BD711 are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intented for use in

BD907

Abstract: BD908 BD912 BD910 BD911 BD707 BD709 BD711 BD909
Contextual Info: SGS-THOMSON G*œi[LI@ M g! BD907/909/911 BD908/910/912 COMPLEMENTARY SILICON POWER TRANSISTORS • BD908, BD909, BD910, BD911 AND BD912 SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD707, BD709, and BD711 are silicon epitaxial-base NPN power transistors in Jedec

I 907

Abstract: bd909
Contextual Info: £ Z 7 SG S-T H O M SO N *7 # BD 905/906/907/908 B D 909/910/911/912 iM MMgra iDOS POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTION The BD905, BD907, BD909, BD911 are silicon epi­ taxial-base NPN power transistors in Jedec TO-220 plastic package. They are intended for use in power

BD9070FP

Contextual Info: 1/4 STRUCTURE Silicon Monolithic Integrated Circuit TYPE Step-down Switching Regulator Integrated High Side Switch PRODUCT SERIES BD9070FP FEATURES ・Integrated FET 1ch Step-down Switching Regulator ・1ch High Side Switch ・Over Voltage Protection which can be Variable by External Resisters

Contextual Info: BD905, BD907, BD909, BD911 BD906, BD908, BD910, BD912 BD905,907, 909, 911 BD906,908,910,912 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power linear and switching applications OIM A B C E F G H J K L M N MIN MAX 16,51 10.67 4.83 0.90 1,15 1.40

BD912

Abstract: 80905 BD905 BD906 BD907 BD908 BD909 BD910 BD911
Contextual Info: il BD905, BD907, BD909, BD911 BD906, BD908, BD910, BD912 BD905, 907, 909, 911 BD906, 908, 910,912 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power linear and switching applications PIN C O N FIG U R AT IO N 1. B A S E 2. C O L L E C T O R

BD907/BD908

Abstract: bd907.bd908 BD907B B0908 b0912 BD907 BD908 BD905 B0907 BD911 BD910
Contextual Info: ÆàMOS PEC COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS NPN BD9Q5 BD907 BD909 BD911 . designed for use in general purpose power amplifier and switching applications. FEATURES: * Collector-Emitter Sustaining Voltage v cEo susf 45V(Min - BD905, BD906 60V(Min)- BD907, BD908

BD907 equivalent

Abstract: transistor BD907 BD907 BD908 bd907 transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD907 DESCRIPTION •DC Current Gain : hFE = 40@ IC= 0.5A ·Collector-Emitter Sustaining Voltage: VCEO SUS = 60V(Min) ·Complement to Type BD908 APPLICATIONS ·Designed for use in general purpose power amplifier and

Contextual Info: L BD905, BD907, BD909, BD911 BD906, BD908, BD910, BD912 BD905, 907, 909, 911 NPN PLASTIC POWER TRANSISTORS BD906, 908, 910, 912 PNP PLASTIC POWER TRANSISTORS Power linear and switching applications c -— 8 - 1 r E 1 r- t 1 °y= ! D E F T yj r ; * 1— 1 °dlG

Contextual Info: • 7 c12ci 2 3 ? 0D5ÔM31 ■ SGS-THOMSON T ~ -33-1 3 _ BD905/906/907/908 BP909/910/911 /912 S G S-TH0MS0N 30E D POWER LINEAR AND SWITCHING APPLICATIONS D E S C R IP TIO N The BD905, BD907, BD909, BD911 are silicon epi­ taxial-base NPN power transistors in JedecTO-220

BD907 equivalent

Abstract: BD907 BD908
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD908 DESCRIPTION •DC Current Gain : hFE = 40@ IC= -0.5A ·Collector-Emitter Sustaining Voltage: VCEO SUS = -60V(Min) ·Complement to Type BD907 APPLICATIONS ·Designed for use in general purpose power amplifier and

B0X53C

Abstract: B0242A tip41 darlington B0242B BD663 bd711
Contextual Info: EPITAXIAL BASE - TO-220 Ic/Vc. V e . ' <A/V m a i V] PNP Vcm (V) Veto (V) (*) *c P» <W) min BD239 BD239A BD239B BD239C BD241 BD241A BD241B BD241C BD243 BD243A BD243B BD243C BD533 BD535 BD537 BD663 BD705 BD707 BD709 BD711 BD0O5 BD907 BD909 BD911 BDW23 BDW23A

TDA2030AV

Abstract: TDA2030A 2 way active crossover circuit diagram 60w audio amplifier circuit diagram woofer amplifier circuit diagram 3 tda2030a amplifier circuit tweeter filter circuit LAYOUT PENTAWATT 4 way audio crossover 100w audio amplifier circuit diagram
Contextual Info: TDA2030A 18W Hi-Fi AMPLIFIER AND 35W DRIVER DESCRIPTION The TDA2030A is a monolithic IC in Pentawatt  package intended for use as low frequency class AB amplifier. With VS max = 44V it is particularly suited for more reliable applications without regulated supply and

T1P42C

Abstract: bd534j T1P102
Contextual Info: TO-220 PIN CO N FIG U R ATIO N 1. B A S E 2. C O L L E C T O R 3. EM ITTER 4. C O L L E C T O R c ,01 0 -I MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 DIM E A B C D E F G H J K L M N 3 G - 1,15 3,75 2,29 2,54 12,70

T1P42C

Contextual Info: TO-220 PIN CONFIGURATION 1. BASE 2 . COLLECTOR 3. EMITTER 4. COLLECTOR c DIM E ,01 0 -I A B C D E F G H J K L M N 3 G MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 - 1,15 3,75 2,29 2,54 12,70 - 2,03 - 7 31,24 DEG TO-220 Power Package Transistors NPN

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

TDA2030A

Contextual Info: S G S -T H O M S O N TDA2030A 18W Hi-Fi AMPLIFIER AND 35W DRIVER T h e T D A 2 0 3 0 A is a m o n o lith ic IC in P entaw att package intended fo r use as low frequency class AB a m plifier. W ith Vs max = 44V it is p a rticu la rly suited fo r more reliable applications w ith o u t regulated

Contextual Info: SEMELAB LTD •type No. SpUon'¡ty Polarl,y 37E D •c cont Package V C E 0 t’ FE @ ■ Vc e /Ic fll331fl? GG0G043 1 ■ SMLB «T PD BD746 BD 7 4 6 A BD 7 4 6 B B D7 4 6 C BD 7 4 6 D PNP PNP PNP PNP PNP SOT 9 3 SOT 9 3 SOT93 SOT 9 3 S OT 9 3 45 60 80 100

3way CROSSOVER

Abstract: TDA2030A
Contextual Info: TDA2030A 18 W hi-fi amplifier and 35 W driver Features • Output power 18 W at VS = ±16 V / 4 Ω with 0.5% distortion ■ High output current ■ Very low harmonic and crossover distortion ■ Short-circuit protection ■ Thermal shutdown s ct Pentawatt (vertical)

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

TDA2030AL

Abstract: TDA2030A 100W TDA2030 TDA2030A equivalent amplifier circuit tda2030 pin diagram for IC tda2030 tda2030 ic audio amplifier UTC TDA2030 multiway amplifier 40w TDA2030
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TDA2030A LINEAR INTEGRATED CIRCUIT 18W HI-FI AUDIO AMPLIFIER AND 35W DRIVER „ DESCRIPTION The UTC TDA2030A is a monolithic IC intended for use as low frequency class AB amplifier. With Vs=max=44V it is particularly suited for more reliable

tda2030a

Contextual Info: TDA2030A 18 W hi-fi amplifier and 35 W driver Features • Output power 18 W at VS = ±16 V / 4 Ω with 0.5% distortion ■ High output current ■ Very low harmonic and crossover distortion ■ Short-circuit protection ■ Thermal shutdown Description The TDA2030A is a monolithic IC in a Pentawatt