BF245 Search Results

2N5458 NATIONAL SEMICONDUCTOR

Abstract: to236 2n4338 MMBFJ201 MMBFJ202 2N5458 BF244A BF245C JFET 2N3684 2N3686 2N4338
Contextual Info: JFET General Purpose continued 7 baE T> m b 5 0 1 1 3 0 003T H T fl bTO « N S C S . NATL SEMICON]) ( DISCRETE ) N Channel V p @ V DSlD Device 3 2N3684 2N3686 2N3822 PN4303 2N4338 2N4339 2N4340 2N5457 MMBF5457 2N5458 MMBF5458 2N5459 MMBF5459 BF244Ä BF245A

BF245

Abstract: "shortwave receiver" shortwave receiver 10,7mhz drm receiver 7808 C4270 SA612 10 MHz 1st IF IC2 LM386
Contextual Info: DDSR1 10,688 MHz 10,712 MHz Oscillator C38 100n C36 C37 C1 100n 1n Oscillator Input X1 SOCKET +12V 7808 REG 7808 10,7 MHz CerRes ANTENNA SFE107 C15 in gnd out R16 100 E1 Regulator Q1 BF245 R1 47k R15 1k L1 L2 L3 0.33µ C2 150 0.39µ C3 270 0.33µ C4 270

Contextual Info: BF245A/2 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A)25m I(G) Max. (A)10m Absolute Max. Power Diss. (W)300m¥ Maximum Operating Temp (øC)150õ I(GSS) Max. (A)5n @V(GS) (V) (Test Condition)20 V(GS)off Min. (V)0.25

BF245B

Contextual Info: BF245A, BF245B JFET VHF/UHF Amplifiers N−Channel − Depletion MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain −Source Voltage VDS ±30 Vdc Drain −Gate Voltage VDG 30 Vdc Gate −Source Voltage VGS 30 Vdc ID 100 mAdc IG f 10 mAdc 350

Contextual Info: BF245A TO C _ y v _ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS General purpose symmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended fo r applications in l.f. and d.c. amplifiers, and in h.f. amplifiers.

BF245

Abstract: BF245C BF245C JFET
Contextual Info: BF244A,B ¿¡T CASE 29-04, STYLE 22 TO-92 TO-226AA 1Souf BF245,A,B,C CASE 29-04, STYLE 23 TO-92 (TO-226AA) G al« \ J 1 / M A X IM U M RATINGS R a tin g V a lu e Sym bol U n it D ra in -S o u rc e V o lta g e Vd S D ra in -G a te V o lta g e vdg 30 G a te -S o u rc e V o lta g e

BF245

Abstract: transistor BF245 Fet BF245 BF245 TRANSISTOR FET TO-92
Contextual Info: G U M O M te tr, DESCRIPTION BF245 is N-Channel Junction Effect Transistor designed VHF/UHF amplifiers and mixer. CRO BF245 N-CHANNEL JUNCTION FET TO-92 Field for GDS ABSOLUTE MAXIMUM RATINGS Drain-Source Voltage VDS 30V Drain-Gate Voltage Gate-Source Voltage

Contextual Info: £Pioducti, me. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 BF245A; BF245B: BF245C U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 N-channel silicon field-effect transistors FEATURES FAX: (973) 375.3960 PINNING • Interchangeabillty of drain and source connections

BF245

Abstract: BF244 JFET BF245 BF245 application note BF245A application notes BF245A BF244B BF244A bf245 equivalent bf245c equivalent
Contextual Info: ON Semiconductort BF245A BF245B JFET VHF/UHF Amplifiers N–Channel — Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS ±30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc Drain Current ID Forward Gate Current

BF245C

Abstract: BF245B BF245A bf245c equivalent BF245C NATIONAL
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 1996 Jul 30 NXP Semiconductors Product specification BF245A; BF245B; BF245C N-channel silicon field-effect transistors

BF245

Abstract: BF244 BF244 JFET JFET BF245 transistor BF245 A BF245 motorola BF244A MOTOROLA transistor bf244 BF245C JFET transistors bf245
Contextual Info: BF244A,B ¿T CASE 29-04, STYLE 22 ¿ i t H / TO-92 TO-226AA .sou, BF245,A,B,C CASE 29-04, STYLE 23 TO-92 (TO-226AA) M A X IM U M RATINGS R a tin g S ym bol V a lu e U n it D ra in -S o u rc e V o lta g e VdS ±30 Vdc D ra m -G a te V o lta g e VdG 30 V dc

bf245c

Contextual Info: DISCRETE SEMICONDUCTORS DAT BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 1996 Jul 30 NXP Semiconductors Product specification BF245A; BF245B; BF245C N-channel silicon field-effect transistors

BF245C

Abstract: BF245B BF245A
Contextual Info: BF245A/BF245B/BF245C BF245A/BF245B/BF245C N-Channel Amplifiers • This device is designed for VHF/UHF amplifiers. • Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VDG Drain-Gate Voltage

bf245a

Abstract: bf245b
Contextual Info: BF245A, BF245B JFET VHF/UHF Amplifiers N–Channel – Depletion MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain–Source Voltage VDS ±30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc ID 100 mAdc Forward Gate Current

transistor BF 245

Abstract: bf 245 BF245 transistor BF245 transistor BF 245 c transistor BF245 A BF245 canal n BF245 TRANSISTOR BF 245 C transistor Bf-245
Contextual Info: BF245 FIELD EFFECT TRANSISTOR, SILICON, N CHANNEL TRANSISTOR A EFFE T DE CHAMP, SILICIUM , CANAL N - LF and HF amplification Vos 30 V max IDSS 2 . 25 mA .Vg s = 0 in 3 groups Amplification BF et H F en 3 groupes 1,1 pF typ. C12S Plastic case F 139 B — See outline drawing CB-76 on last pages

BB530

Contextual Info: • [3^53131 DDESMTti T47 ■ APX BF245A TO C N AUER PHILIPS/DISCRETE L7E D N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS General purpose symmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications in l.f. and d.c. amplifiers, and in h.f. amplifiers.

BF245A

Abstract: Transistor BF245A bf245-a
Contextual Info: TllOñBb 0Db74b5 E3T IPHIN BF245A TO C N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS General purpose symmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications in t.f. and d.c. amplifiers, and in h.f. amplifiers.

BF245

Abstract: bf245b JFET BF245 BF245A BF245C BF245C JFET
Contextual Info: ON Semiconductort BF245A BF245B JFET VHF/UHF Amplifiers N–Channel — Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS ±30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc Drain Current ID 100 mAdc Forward Gate Current

Contextual Info: BF245A/0 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A)25m I(G) Max. (A)10m Absolute Max. Power Diss. (W)300m¥ Maximum Operating Temp (øC)150õ I(GSS) Max. (A)5n @V(GS) (V) (Test Condition)20 V(GS)off Min. (V)0.25

BF245C

Abstract: bf245b BF245A BF-215 application notes BF245A BF245B PHILIPS mqe7 MBH555
Contextual Info: Philips Semiconductors Product specification N-channel silicon field-effect transistors FEATURES BF245A; BF245B; BF245C PINNING • Interchangeability of drain and source connections PIN SYMBOL • Frequencies up to 700 MHz. 1 2 d drain s source APPLICATIONS

BF245G

Abstract: BF245A BF245AI application notes BF245A n627 BF245B BF245C
Contextual Info: ^53^31 00E3inb N AMER T47 • APX PHILIPS/DISCRETE b7E BF245A TO C T> N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS General purpose symmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended fo r applications in l.f. and d.c. amplifiers, and in h.f. amplifiers.

transistor BF245

Abstract: BF245 Fet BF245 transistor BF245 A UHF transistor FET
Contextual Info: IsK U N-CHANNEL JUNCTION FET DESCRIPTION BF245 Effect is N-Channel Transistor TO-92 Junction Field designed for VHF/UHF amplifiers and mixer. GDS ABSOLUTE MAXIMUM RATINGS Drain-Source Voltage VDS 30V Drain-Gate Voltage VDG 30V Gate-Source Voltage VGS 30V Drain Current

BF245

Abstract: BF244 BF244 JFET JFET BF245 BF244A BF245 motorola BF245C transistors bf245 BF244A MOTOROLA BF245C JFET
Contextual Info: BF244A,B ¿T CASE 29-04, STYLE 22 ¿ i t H / TO-92 TO-226AA .sou, BF245,A,B,C CASE 29-04, STYLE 23 TO-92 (TO-226AA) M A X IM U M RATINGS R a tin g S ym bol V a lu e U n it D ra in -S o u rc e V o lta g e VdS ±30 Vdc D ra m -G a te V o lta g e VdG 30 V dc

JFET BF245

Abstract: BF245 BF244A
Contextual Info: ON Semiconductort BF245A BF245B JFET VHF/UHF Amplifiers N–Channel — Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS ±30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc Drain Current ID Forward Gate Current