BUP22 Search Results

BUP22C

Abstract: BUP22 BUP22B
Contextual Info: 11 N AMER PHILIPS/DISCR ETE 2SE D • bfa53*ï31 OOlflb? b ■ BUP22 SERIES „ T~ - g g - /3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.

Contextual Info: N AflER PHILIPS/DISCRETE 2SE D • bb53T31 OOlflb? h m BUP22 SERIES SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.

BUP22C

Abstract: BUP22BF BUP22CF
Contextual Info: D E V EL O P M EN T DATA l 1^53=131 GGlöböS s T his data sheet contains advanca information and specifications are subject to change w ithout notice. BUP22BF BUP22CF 25E D N AMER PHILIPS/DISCRETE T - 3 3 - O ? SILICON DIFFUSED POWER TRAN SISTO RS High-voltage, high-speed, glass-passivated npn power transistor in a SO T199 envelope intended for use

transistor bup22c

Abstract: IC 555 BUP22
Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# BUP22C Features • • • High voltage With TO-3PN package NPN Silicon power transistor intended for high voltage, high speed switching industrial applications.

Contextual Info: MODEL: BU-P2249-C-XX Test Lead, BNC M on Each End, RG-58C/U • Materials: o Cable: Cable is RG 58C/U, complies to Mil-M17/155-00001 Jacket is non-contaminating PVC Center conductor is 20 AWG (19x33) tinned copper Shield is tinned copper braid (95% coverage)

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

IDC2555

Abstract: TIPL763A BU526 2N630B 250n
Contextual Info: POWER SILICON NPN Item Number Part Number V I C) 5 10 15 20 25 30 55 60 65 70 75 BO B5 90 95 Max (Hz) leBO Max (A t, Max Tope, Max (I) eC) Package Style >= 5 A, (Cont'd) B.O B.O B.O B.O B.O B.O B.O B.O B.O B.O 350 350 350 350 350 350 350 350 350 350 4.0 4.0

Contextual Info: D EVELO PM EN T DATA L b S a ^ l aoiatas m 5 B U P22B F B U P 2 2C F This data sheet contains advance information and specifications are subject to change without notice. N AMER PHILIPS/DISCRETE 2SE D T - 33 - 0 ? S IL IC O N D IFFU S E D P O W E R T R A N S IS T O R S

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

buw13a philips semiconductor

Abstract: 180NS mje13008 BUS12 BUS12A BUT12 BUT12A BUT18 BUS13 BUT18AF
Contextual Info: N AUER PHILIPS/DISCRETEL ESE D • bbS HÌBl 001b521 Ö ■ Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. V CE(*at) MAX. at lc/lB tftyp at lc (Inductive load) 400V 450V 1.5V at 4A/0.8A 180ns at 4A 850V 1000V 400V 450V 1.5V at 4A/0.8A 180ns at 4A

Contextual Info: N AUER PHILIPS/DISCRETE, BSE D • QOlbEEl fl ■ T~3 I Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. V CE(*at) MAX. at lc/lB tftyp at lc (Inductive load) 400V 450V 1,5V at 4A /0.8A 180ns at 4A 850V 1000V 400V 450V 1.5V at 4 A /0.8A 180ns at 4A

2sc1403 sanken

Abstract: MJ3247 B0537 2sc2579 2SC1403A 2SC2261 SANKEN BOX53F mj04 B0543C MJ-4248
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 45 50 55 60 65 70 95 932 Y(BR)CEO fT hFE Min NthAmerSemi See Index PhihpsElec NthAmerSemi AmperexElec See Index NthAmerSemi Sanken Elec NthAmerSemi TexslnstLtd t 8.0 8.0 8.0 8.0 8.0 8.0

Contextual Info: MODEL: BU-P2269 Double Banana Jack Panel mount MATERIALS: Contacts - Nickel Plated Brass Insulators - Nylon Solder connection RATING: 15 Amps Hands free testing to 1000 VDC max. Temperature: -50°C to 120°C

Contextual Info: N AMER PHILIPS/DISCRETE 35E D • bbS3T31 D01flbT3 4 I BUP23B BUP23C T - 3 3 - f S' -SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

Contextual Info: MODEL: BU-P2249-C-XX Test Lead, BNC M on Each End, RG-58C/U • Materials: o Cable: Cable is RG 58C/U, complies to Mil-M17/155-00001 Jacket is non-contaminating PVC Center conductor is 20 AWG (19x33) tinned copper Shield is tinned copper braid (95% coverage)

buw13a philips semiconductor

Abstract: BUT22A BUT228 BUP23A SOT93 BUT18 PHILIPS SEMICONDUCTOR mje13008 SOT-93 bus13 philips transistor VCE 1000V
Contextual Info: BSE J> N AUER PHILIPS/DISCRETE • bbS3T31 001bE21 Ö ■ Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. TYPE NO. PACKAGE OUTLINE •cfDOt1) 6A v CE(*at) MAX. at lc/lB t ft y p a tlc (Inductive load) 400V 450V 1.5V at 4A/0.8A 180ns at 4A 850V 1000V

Contextual Info: BU-P2240-* ALLIGATOR CLIPS AND INSULATORS DESCRIPTION: Mueller's world famous BU-60 alligator Clips and BU-62-* Insulators sold in a convenient (10Pack.) Clip can be crimped or soldered to wire from 22-14 AWG. MATERIAL: Clip: Insulator: Nickel plated Steel.

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI

STRS6307

Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
Contextual Info: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173

Contextual Info: BU-P2249-C-XX Test Lead, BNC with Strain Relief on Each End, RG-58C/U Materials:  Cable: Cable is RG 58C/U, complies to Mil-M17/155-00001 Jacket is non-contaminating PVC Center conductor is 20 AWG (19x33) tinned copper Shield is tinned copper braid (95% coverage)

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

TXD10K40

Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40