BOX6947 Search Results

Contextual Info: 2N 2906 PN 2906 M • 2N2906A • PN2906A PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES 1 CASE TO-18 THE 2TT2906, 2N2906A, PN2906, PN2906A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SFEET SWITCHING APPLICATIONS. THEY ARE

Contextual Info: MPS 6520 thru’ MPS 6523 COMPLEMENTARY r- SILICON TRANSISTORS MPS6520, MPS6521 NPN and MPS6522, MPS6523 (PNP) are complementary silicon planar epitaxial transistors designed for general purpose amplifier applications and for complementary circuitry. ABSOLUTE MAXIMUM RATINGS

Contextual Info: 2N3905 2N3906 PNP SILICON PLANAR EPITAXIAL TRANSI STOBS THE 2N3905 AND 2N3906 ABE PNP SILICON PLANAR EPITAXIAL TRANSISTORS. THEY ARE INTENDED FOR GENERAL PURPOSE, SATUHATEDSWITCHING AND AMPLIFIER APPLICATIONS. THEY ARE COMPLIMENTARY TO 2N3903 AND 2N3904 RESPECTIVELY.

bf314

Contextual Info: BF 314 NPN SILICON Ik lJ. PLANAR UBI HIGH FREQUENCY EPITAXIAL J TRANSISTOR m n mj»4 * ? j i MECHANICAL OUTLINE GENERAL DESCRIPTION ; The BF314 is a NPN silicon planar epitaxial transistor designed for use as RF amplifier and VHF & UHF input stage in common base configuration.

MPS6522

Abstract: mps-6522 MPS6520 MPS6521 MPS6523
Contextual Info: il il u iv ir w wv/<.w COMPLEMENTARY SILICON TRANSISTORS MPS6520, MPS6521 NPN and MPS6522, MPS6523 (PNP) are complementary silicon planar epitaxial transistors designed for general purpose amplifier applications and for complementary circuitry. ABSOLUTE MAXIMUM RATINGS

BC238 h parameter

Abstract: MH 0810C hFE Group 8100C ME8100 MH8100 MH0810 BC308 1I103 BC238
Contextual Info: MH 8100 MH 0810 COMPLEMENTARY EPITAXIAL TRANSISTORS FOR 3 - 5 W AF OUTPUT MICRO ELECTRONICS The MH8100 NPN , MH0810 (PNP) are complementary silicon planar epitaxial transistors designed fo r the output stages of 3 - 5 watt audio amplifiers. They are also suitable for

2N5818

Abstract: 2N5815 2N5814 2N5816 2N5819 2N5810 2N5811 BOX69477
Contextual Info: ! I/ * • 2N5819 ■ /' 2N5810 • th ro u g h COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS I CASE TO-92F WITH X-67 LEAD PREFORMED HEAT SINK THE 2N5810 THROUGH 2N5819 ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVERS AND OUTPUTS, AS WELL AS FOR UNIVERSAL APPLICATIONS.

3906 pnp

Abstract: 2N3903 2N3904 2N3905 2N3906 BOX69477 2N3906 MICRO ELECTRONICS E3040
Contextual Info: Vj.sl 2N3905 'i i /• 2N 3906 PNP SILICON PLANAR EPITAXIAL TRáNSISTOBS . » . . * •••• . • s . . . . . k. . V . ’ V • . t, *. . i . •• . . . . . . <y -

PN3563

Abstract: PN5130 BOX69477 PN5132
Contextual Info: PN 3563 PN 5130 PN 5132 NPN SILICON RF SMALL SIGNAL TRANSISTORS CASE TO-92A THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR RF SMALL SIGNAL APPLICATIONS. PN3565 PN5130 PN5132 «V SBC PN3563 PN5130 ' PN5132 ABSOLUTE MAXIMUM RATINGS Collector-Base ^oltage

BC485

Abstract: BC487 transistors BC 487 BC489
Contextual Info: B C 485 B C 487 B C 489 NPN SILICON PLANAR EPITAXIAL TRANSISTORS IVIICFRD ELEC CASE T0-92F BC485, BC487 and BC489 are NPN silicon planar epitaxial transistors designed for use as high voltage high current driver and output transistors. ABSOLUTE MAXIMUM RATINGS

2N5372

Abstract: 2N5369 2N5373 2N5368 2N5370 2N5371 2N5374 2N5375 2N5568 NPN, PNP for 500ma, 30v
Contextual Info: 2N 5368 through 2N 5375 ^1 COMPLEMENTARY SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES _ ;SF A THE ABOVE TYPES ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. CASE TO-92F CEB 2N 5368 ffPN

BC337

Abstract: BC338 BC327 BC328 BC337 hfe PNP BC327
Contextual Info: BC 337 BC 338 NPN SILICON AP MEDIUM POWER TRANSISTORS CASE TO-92F THE BC337 » BC338 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC337, BC338 ARE COMPLEMENTARY TO THE PNP TYPE BC327,

ME0412

Abstract: 8822 TRANSISTOR me0411 ME0413 20MHZ 4102 transistor ME4103
Contextual Info: SMALL SIGNAL HIGH GAIN LOW NOISE NPN SILICON PLANAR EPITAXIAL TRANSISTOR MICRO ELECTRONICS FEATURES • H ig h G a i n h p g . 1 0 0 - 6 0 0 • E x c e lle n t L i n e a r i t y F ro m lO ^ A • H ig h B re a k d o w n V o l t a g e B V

BCy71

Abstract: BCY70 vce 1v BCY72
Contextual Info: BCY70.1.2 PNP /* SILICON TRANSISTORS TO-18 The BCY70, BCY71 and BCY72 are PNP silicon planar epitaxial transistors designed for general purpose amplifier and switching applications. CBE ABSOLUTE MAXIMUM RATINGS BCY70 BCY71 BCY72 Collector-Base Voltage VcBO

bc727

Abstract: bc728
Contextual Info: THE BC727, BC728 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS POR USE IN AF DRIVER AND OUTPUT STAGES, AS WELL AS FOR IJNIYERSAL APPLICATIONS. THE BC727,BC728 ARE COMCOMPLEMENTARY TO THE NPN TYPE BC737, BC738 RESPECTIVELY. CASE TO-92A "EBC ABSOLUTE MAXIMUM RATINGS

Contextual Info: 2N2102 • 2N4036 COMPLEMEMTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES 1 THE 2N210? NPN AND 2N4056(PNP) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICATIONS. C E B

2N5819

Contextual Info: *I I/ • ¡ 2N5810 2N5819 th ro u g h COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS I CASE TO-92F LEAD PREFORMED THE 2N5810 THROUGH 2N5819 ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVERS AND OUTPUTS, AS WELL AS FOR UNIVERSAL APPLICATIONS.

Contextual Info: MPS - A 43 MPS - A 42 NPN SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS K *a I CASE TO-92A THE MPS-A42, MPS-A43 ARE NPN SILICON PLANAR TRANSISTORS FOR GENERAL PURPOSE HIGH VOLTAGE APPLICATIONS SUCH AS TV VIDEO OUTPUT STAGE AND GAS DISCHARGE TUBE DRIVER.

MGB31TAH

Contextual Info: CKO MGB31TAH ULTRA il Kill BRIGHTNESS GREEN LED LAMP DESCRIPTION MGB31TAH is an AlGalnP super green LED lamp encapsulated in a 3mm diameter, clear transparent lens. * No scale * ToL : +/- 0.3mm ABSOLUTE MAXIMUM RATINGS Power Dissipation @ Ta=25°C Forward Current, DC IF

MPSA55

Abstract: A06 NPN mpsa56 mpsa06 MFS-A05 MPS-A05 MPS-A06 MPS-A55 MPS-A56 MPS A06
Contextual Info: MPS-A06 MPS-A56 MPS-A05 MPS-A55 W'ß\ COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS CASE TO-92A THE MPS-A05, MPS-A06, MPS-A55» MPS-A56 ARE SILICON PLANAR EPITAXIAL„TRANSISTORS FOR AF DRIVERS AND OUTPUTS, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE MPS-A05,

BC758

Abstract: BC727 BC728 BC737 BC738
Contextual Info: ÖC 737 • BC 738 NPN SILICON AF MEDIUM POWER TRANSISTORS sj- ' 4 'è é i ispr •*' $ THE BC737, BC738 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC737, BC738 ARE COM­

Contextual Info: CRO MGB31TAH ULTRA il K ill BRIGHTNESS GREEN LED LAMP DESCRIPTION MGB31TAH is an AlGalnP super green LED lamp encapsulated in a 3mm diameter, clear transparent lens. * No scale * ToL : +/- 0.3mm ABSOLUTE MAXIMUM RATINGS Power Dissipation @ Ta=25°C Forward Current, DC IF

200 watt audio ic

Abstract: ic 8050 8050h
Contextual Info: CRÛ 8050 G E N E R A L D E S C R IP T IO N :- •4 H ie 8 0 5 0 is an NPN epitaxial silicon planar transistor designed for use in the audio ou tp ut stage and converter/inverter circuits. Complem entary to 8550. TO-92A R A T IN G S Note 1 Maximum Temperatures

BC358

Abstract: BC327 BC328 BC337 BC338
Contextual Info: BC 337 BC 338 NPN SILICON AP MEDIUM POWER TRANSISTORS 1 . CASE TO-92F THE BC337» BC338 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS POR USE IN AF DRIVER AND OUTPUT STAGES, AS: WELL AS FOR UNIVERSAL APPLICATIONS. THE BC357, BC338 ARE COMPLEMENTARY TO THE PNP TYPE BC327,