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    BPW41 CIRCUIT Search Results

    BPW41 CIRCUIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP2701 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), 5000 Vrms, 4pin SO6L Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B Visit Toshiba Electronic Devices & Storage Corporation

    BPW41 CIRCUIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bpw41

    Abstract: BPW41 circuit c5v6 ZTX500 ZTX300 photodiode BPW41 digital object counter object counter circuit BPW41C 220R
    Text: Design Note 1 Issue 2 June 1995 Light Coupled Speed Measurement Using the BPW41 Photodiode R2 1.2K R3 220K R4 2.2K VR1 C4 1K 47uF VR2 + ME1 S1 220R S2 C2 BC848 C1 C5 1uF R1 220K 1uF D1 BPW41C B1 9V BC857 BC848 BC848 22uF C6 47uF D2 C3 0.01uF BZX84 C5V6 It is often necessary to measure the


    Original     		PDF BPW41 BC848 BPW41C BC857 BZX84 BPW41C 300/ZTX500 BPW41 circuit c5v6 ZTX500 ZTX300 photodiode BPW41 digital object counter object counter circuit 220R

    ZTX384

    Abstract: BPW41D ultrasonic 4046 pll zpd200 low noise ir photodiode amplifier INTRODUCTION OF AUTOMATIC ROOM LIGHT CONTROL Design and construction Wave FM radio transmitter BPW41 IR DATA BPW41 circuit application 4046 self bias amplifier
    Text: Application Note 3 Issue 2 November 1995 Infra-Red Remote Control and Data Transmission An Introduction to Photodiodes - Load Circuits and Applications David Bradbury Introduction The use of short range remote control and data transmission systems in both


    Original     		PDF BPW41D ZTX384 ultrasonic 4046 pll zpd200 low noise ir photodiode amplifier INTRODUCTION OF AUTOMATIC ROOM LIGHT CONTROL Design and construction Wave FM radio transmitter BPW41 IR DATA BPW41 circuit application 4046 self bias amplifier

    m3870

    Abstract: TDA2320 equivalent 2x1N4148 TDA2320 bpw41 bd237 equivalent TV IR remote control circuit diagram BC377 equivalent BC377 BPW41 circuit application
    Text: TDA2320 PREAMPLIFIER FOR INFRARED REMOTE CONTROL SYSTEMS DESCRIPTION The TDA2320is a monolithic integratedcircuit in Dip package especially designedto amplify the IR signal in remote controlled TV or radio sets. It directly interfaces the digital control circuitry.


    Original     		PDF TDA2320 TDA2320is TDA2320 M709A/M710A/MOS M3870 TDA2320 equivalent 2x1N4148 bpw41 bd237 equivalent TV IR remote control circuit diagram BC377 equivalent BC377 BPW41 circuit application

    BPW41 circuit

    Abstract: BPW41 remote control a1bb BC377 BPW41 circuit application 2x1N4148 BPW41
    Text: TDA2320 PREAMPLIFIER FOR INFRARED REMOTE CONTROL SYSTEMS DESCRIPTION The TDA2320 is a monolithicintegrated circuit in Dip package specially designed to amplify the IR signal in remote controlled TV or radio sets. It directly interfaces with the digital control circuitry.


    Original     		PDF TDA2320 TDA2320 M709A/M710A/MOS M3870 TDA2320N BPW41 circuit BPW41 remote control a1bb BC377 BPW41 circuit application 2x1N4148 BPW41

    Measurement Techniques

    Abstract: measurem TEMD5100X01 photodiode application luxmeter BPW20RF BPW34 application note
    Text: Measurement Techniques www.vishay.com Vishay Semiconductors Measurement Techniques INTRODUCTION VS = 80 V > VR max. The characteristics of optoelectronics devices given in datasheets are verified either by 100 % production tests followed by statistic evaluation or by sample tests on typical


    Original     		PDF 31-Jul-12 Measurement Techniques measurem TEMD5100X01 photodiode application luxmeter BPW20RF BPW34 application note

    BPW34 application note

    Abstract: APPLICATION NOTE BpW34 BPW34 osram BPW41N IR DATA phototransistor application lux meter photodiode application luxmeter pin configuration bpw34 BPW41N IR BPW20RF BPW21R osram
    Text: Measurement Techniques Vishay Semiconductors Measurement Techniques INTRODUCTION VS = 80 V > VR max. The characteristics of optoelectronics devices given in datasheets are verified either by 100 % production tests followed by statistic evaluation or by sample tests on typical


    Original     		PDF 27-Aug-08 BPW34 application note APPLICATION NOTE BpW34 BPW34 osram BPW41N IR DATA phototransistor application lux meter photodiode application luxmeter pin configuration bpw34 BPW41N IR BPW20RF BPW21R osram

    near IR sensors with daylight filter

    Abstract: light sensing circuit project BPW34 application note BPW20RF
    Text: TEKT5400S www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm


    Original     		PDF TEKT5400S TSKS5400S 2002/95/EC 2002/96/EC TEKT5400S 2002/95/EC. 2011/65/EU. JS709A near IR sensors with daylight filter light sensing circuit project BPW34 application note BPW20RF

    BPW20RF

    Abstract: BPW34 osram phototransistor application lux meter BPW41 BPW34 application note BPW20RF application BPW41N IR DATA wi41g
    Text: BPV11 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		PDF BPV11 2002/95/EC 2002/96/EC BPV11 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 BPW20RF BPW34 osram phototransistor application lux meter BPW41 BPW34 application note BPW20RF application BPW41N IR DATA wi41g

    BPW46

    Abstract: BPW34 osram
    Text: VSLB3940 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: p = 940 nm • High speed • High radiant power


    Original     		PDF VSLB3940 2002/95/EC 2002/96/EC VSLB3940 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 BPW46 BPW34 osram

    BPW41 circuit application

    Abstract: OSRAM IR emitter
    Text: VSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm • High reliability


    Original     		PDF VSMG3700 J-STD-020 AEC-Q101 2002/95/EC 2002/96/EC VSMG3700 2002/95/EC. 2011/65/EU. JS709A BPW41 circuit application OSRAM IR emitter

    BPW34 application note

    Abstract: No abstract text available
    Text: VSMS3700 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 60°


    Original     		PDF VSMS3700 VEMT3700 J-STD-020 VSMS3700 AEC-Q101 2002/95/EC 2002/95/EC. 2011/65/EU. JS709A BPW34 application note

    BPW34 application note

    Abstract: APPLICATION NOTE BpW34 lux meter calibration RB94
    Text: VSMF4720 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability


    Original     		PDF VSMF4720 VSMF4720 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 BPW34 application note APPLICATION NOTE BpW34 lux meter calibration RB94

    BPW34 osram

    Abstract: wi41g BPW34 application note
    Text: VSMY1850X01 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: 0805 • Dimensions L x W x H in mm : 2 x 1.25 x 0.85 • AEC-Q101 qualified • Peak wavelength: p = 850 nm


    Original     		PDF VSMY1850X01 AEC-Q101 J-STD-020 2002/95/EC 2002/96/EC VSMY1850X01 2002/95/EC. 2011/65/EU. JS709A BPW34 osram wi41g BPW34 application note

    BPW34 smd

    Abstract: smd resistor 8606 BPW34 application note
    Text: VSMF4710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability


    Original     		PDF VSMF4710 J-STD-020 AEC-Q101 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU. JS709A BPW34 smd smd resistor 8606 BPW34 application note

    phototransistor application lux meter

    Abstract: BPW21 APPLICATION NOTE BpW34 pad OSRAM ICM 10 BPW20RF BPW21R osram BPW34 osram 80085 smoke detector using phototransistor high speed uv phototransistor
    Text: VEMT4700 Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: surface mount • Package form: PLCC-3 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		PDF VEMT4700 VSML3710 VEMT4700 J-STD-020 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 phototransistor application lux meter BPW21 APPLICATION NOTE BpW34 pad OSRAM ICM 10 BPW20RF BPW21R osram BPW34 osram 80085 smoke detector using phototransistor high speed uv phototransistor

    pin configuration bpw34

    Abstract: APPLICATION NOTE BpW34 BPW34 smd Application lux meter BPW41 remote control VSMY2850
    Text: VSMY2850RG, VSMY2850G www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology VSMY2850RG FEATURES VSMY2850G • Package type: surface mount • Package form: GW, RGW • Dimensions L x W x H in mm : 2.3 x 2.3 x 2.8


    Original     		PDF VSMY2850RG, VSMY2850G VSMY2850RG VEMD2500X01 J-STD-020 VSMY2850 2002/95/EC. 2002/95/EC 2011/65/EU. pin configuration bpw34 APPLICATION NOTE BpW34 BPW34 smd Application lux meter BPW41 remote control

    bpw 75

    Abstract: near IR photodiodes with daylight filter BPW 23 nf ir headphone BPW34 application note
    Text: VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 940 nm • High reliability


    Original     		PDF VSML3710 VEMT3700 VSML3710 J-STD-020 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 bpw 75 near IR photodiodes with daylight filter BPW 23 nf ir headphone BPW34 application note

    BPW34 smd

    Abstract: phototransistor application lux meter BPW20
    Text: VSMY3850 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • • • 94 8553 Package type: surface mount Package form: PLCC-2 Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75


    Original     		PDF VSMY3850 J-STD-020 2002/95/EC 2002/96/EC VSMY3850 2002/95/EC. 2011/65/EU. JS709A BPW34 smd phototransistor application lux meter BPW20

    lux meter chip

    Abstract: IR Diodes BPW41N IR DATA 80085 short distance measurement ir infrared diode wi41g
    Text: VSMY1850 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: 0805 • Dimensions L x W x H in mm : 2 x 1.25 x 0.85 • Peak wavelength: λp = 850 nm • High reliability


    Original     		PDF VSMY1850 J-STD-020 2002/95/EC 2002/96/EC VSMY1850 2002/95/EC. 2011/65/EU. JS709A lux meter chip IR Diodes BPW41N IR DATA 80085 short distance measurement ir infrared diode wi41g

    BPW34 application note

    Abstract: APPLICATION NOTE BpW34 BPW41 remote control
    Text: VSMF3710 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 890 nm • High reliability


    Original     		PDF VSMF3710 VSMF3710 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 BPW34 application note APPLICATION NOTE BpW34 BPW41 remote control

    Phototransistor TIL81

    Abstract: TIL81 Phototransistor TIL100 Phototransistor bpx25 Phototransistor zm110 Phototransistor TIL100 FERRANTI ELECTRONICS Infra-red bpx25 mrd300 equivalent
    Text: COMPETITOR CROSS REFERENCE LIST The following cross-reference list has been compiled as a guide for design engineers and purchasing agents and indicates the nearest Ferranti equivalent to a variety of competitive manufacturer's devices. In some cases there will be minor differences in electrical characteristics and/or package details and


    OCR Scan     		PDF MRD310. ZM110 MRD370 ZM100 MRD810. MRD3050 BPX29 MRD3051 Phototransistor TIL81 TIL81 Phototransistor TIL100 Phototransistor bpx25 Phototransistor zm110 Phototransistor TIL100 FERRANTI ELECTRONICS Infra-red bpx25 mrd300 equivalent

    TIL81

    Abstract: Phototransistor TIL81 Phototransistor TIL100 lens photodiode phototransistor Phototransistor bpx25 Phototransistor zm110 Infrared phototransistor TO18 BPW41D ferranti
    Text: SILICON PLANAR PHOTOTRANSISTORS GENERAL APPLICATIO N S OF FERRANTI PHOTOTRANSISTORS Alarm Systems, Process Control, Edge and Position Sensing, Optical Character Recognition, Tape Readers, Card Readers, Electronic Flash Control, etc. ZM100 SER IES TO-18 HERM ETIC ZM100/110, BPX25/29


    OCR Scan     		PDF ZM100 ZM100/110, BPX25/29) ZM110 BPX25 MRD310. ZM110 MRD370 ZM100 TIL81 Phototransistor TIL81 Phototransistor TIL100 lens photodiode phototransistor Phototransistor bpx25 Phototransistor zm110 Infrared phototransistor TO18 BPW41D ferranti

    Phototransistor TIL81

    Abstract: TIL81 Transistor BPX25 til100 Phototransistor bpx25 phototransistor Infrared phototransistor TO18 Phototransistor zm110 phototransistor and applications MRD300
    Text: SILICON PLANAR PHOTOTRANSISTORS GENERAL APPLICATIONS OF FERRANTI PHOTOTRANSISTORS Alarm Systems, Process Control, Edge and Position Sensing, Optical Character Recognition, Tape Readers, Card Readers, Electronic Flash C ontrol, etc. ZM100 SERIES TO-18 HERMETIC ZM100/110, BPX25/29


    OCR Scan     		PDF ZM100 ZM100/110, BPX25/29) ZM110 BPX25 ZM210 Phototransistor TIL81 TIL81 Transistor BPX25 til100 Phototransistor bpx25 phototransistor Infrared phototransistor TO18 Phototransistor zm110 phototransistor and applications MRD300

    cqx 87

    Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
    Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157


    OCR Scan     		PDF AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175