BSS7 Search Results

Contextual Info: SMD Type SMD Type Product specification BSS79,BSS81 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low collector-emitter saturation voltage. 1 0.55 High DC current gain: 0.1mA to 500 mA. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1

BSS79C

Contextual Info: SOT23 NPN SILICON PLANAR SWITCHING TRANSISTOR ISSUE 2 - SEPTEMBER 95 Q_ P A R T M A R K IN G D E TA ILS - B S S 79B - CE B SS79C - CF BSS79B BSS79C ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BOL C o lle c to r-B a s e V o lta g e C o lle c to r-E m itte r V o lta g e

BSS73DCSM

Contextual Info: BSS73DCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15

BSS74

Abstract: jc-70 BSS75 BSS76
Contextual Info: DATA SHEET BSS74 BSS75 BSS76 PNP SILICON HIGH VOLTAGE TRANSISTOR JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR BSS74 series types are hermetically sealed PNP small signal transistors manufactured by the epitaxial planar process designed for high voltage amplifier applications.

bss7

Contextual Info: \oducta, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BSS72 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Parameter Symbol VCBO VCEO VEBO lo IB Pw VT, Unit V V V mA mA W W °C Viliw

BSS74R

Contextual Info: SEME BSS74R LAB MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) HIGH VOLTAGE PNP SILICON TRANSISTOR 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 3 1 2 TO–18 PACKAGE

BSS7728N

Abstract: E6327
Contextual Info: Rev. 2.0 BSS7728N SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS 60 V • Enhancement mode RDS on 5 Ω • Logic Level ID 0.2 A • dv/dt rated SOT-23 Drain pin 3 Gate pin1 Source pin 2 Type Package BSS7728N SOT-23 Ordering Code

BSS81C

Abstract: BSS79 BSS79B BSS79C BSS80 BSS81 BSS81B BSS82
Contextual Info: BSS79, BSS81 NPN Silicon Switching Transistors 3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary types: BSS80, BSS82 PNP 2 1 Type Marking Pin Configuration BSS79B CEs 1=B 2=E 3=C SOT23 BSS79C CFs 1=B 2=E

BSS71

Abstract: LE17 8576
Contextual Info: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BSS71 • High Voltage • Hermetic TO-18 Metal package. • Ideally suited for High Voltage Amplifier and Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

Contextual Info: BSS74 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 200V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products

Contextual Info: BSS72 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 250V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products

Contextual Info: BSS74CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

Contextual Info: BSS78 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 200V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products

Contextual Info: BSS77 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 200V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products

Contextual Info: BSS79, BSS81 NPN Silicon Switching Transistors 3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary types: BSS80, BSS82 PNP 2 1 Type Marking Pin Configuration BSS79B CEs 1=B 2=E 3=C SOT23 BSS79C CFs 1=B 2=E

Contextual Info: BEE D • û53b32Q QG1712b b « S I P NPN Silicon Switching Transistors 3 S'” I Ì SIEMENS/ S P C L i • • • SEMKONDS BSS79 BSS 81 _ High DC current gain Low collector-emitter saturation voltage Complementary types: B S S 80, BSS 82 PNP

BSS70

Abstract: BSS70R bss69r BSS69 DSA003680
Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS BSS69 BSS70 ISSUE 2 – SEPTEMBER 1995 ✪ PARTMARKING DETAILS — BSS69 BSS70 BSS69R BSS70R - L2 L3 L6 L7 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -40

BSS72S

Abstract: BSS75S
Contextual Info: 3QE D T^S'ìSB? QG31G57 b SGS-THOMSON * t I BSS72S IO S G S- T H O M S O N HIGH VOLTAGE AMPLIFIER PRELIM INARY DATA DESCRIPTION The BSS72S is a silicon planar epitaxial NPN tran­ sistor in Jedec TO-18 metal case. It is designed for high voltage amplifier and switching applications at

BSS71CSM

Contextual Info: BSS71CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

BSS71DCSM

Contextual Info: BSS71DCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15

BSS71

Contextual Info: BSS71 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 200V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products

BSS74CSM

Contextual Info: BSS74CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

BSS75

Contextual Info: BSS75 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 250V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products

BSS71S

Abstract: BSS74S
Contextual Info: 3DE 3> • 7^537 0031025 J>S - 5 ■ f Z 7 SGS-THOMSON A T f s I L K M « ! _ B S S 7 1 S S G S-THOMSON HIGH VOLTAGE AMPLIFIER DESCRIPTION The BSS71S is a silicon planar epitaxial NPN tran­ sistor in Jedec TO-18 metal case. It is designed for