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    C1206C104K1RACTU Price and Stock

    KEMET Corporation C1206C104K1RACTU

    Multilayer Ceramic Capacitor, 0.1 uF, 100 V, ± 10%, X7R, 1206 [3216 Metric] - Tape and Reel (Alt: C1206C104K1RACTU)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas C1206C104K1RACTU Reel 475,000 8 Weeks 4,000
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    C1206C104K1RACTU Reel 9 Weeks 4,000
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    Mouser Electronics C1206C104K1RACTU 104,222
    • 1 $0.16
    • 10 $0.117
    • 100 $0.073
    • 1000 $0.035
    • 10000 $0.027
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    Verical C1206C104K1RACTU 88,000 4,000
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    C1206C104K1RACTU 51,793 2,605
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    C1206C104K1RACTU 7,408 2,179
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    Newark C1206C104K1RACTU Cut Tape 40,365 1
    • 1 $0.166
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    • 100 $0.057
    • 1000 $0.036
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    C1206C104K1RACTU Reel 4,000 4,000
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    • 10000 $0.028
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    C1206C104K1RACTU Cut Tape 2,250 1
    • 1 $0.166
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    • 100 $0.057
    • 1000 $0.036
    • 10000 $0.036
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    C1206C104K1RACTU Reel 4,000
    • 1 $0.024
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    RS C1206C104K1RACTU Bulk 4,000
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    Bristol Electronics C1206C104K1RACTU 9,652
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    C1206C104K1RACTU 3,970 17
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    Quest Components C1206C104K1RACTU 21,975
    • 1 $0.066
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    C1206C104K1RACTU 6,240
    • 1 $0.32
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    • 1000 $0.096
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    C1206C104K1RACTU 3,176
    • 1 $0.4
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    C1206C104K1RACTU 2,800
    • 1 $0.2
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    • 100 $0.09
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    C1206C104K1RACTU 2,784
    • 1 $0.3
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    • 100 $0.135
    • 1000 $0.09
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    C1206C104K1RACTU 2,678
    • 1 $0.315
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    • 100 $0.0945
    • 1000 $0.063
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    C1206C104K1RACTU 2,584
    • 1 $0.48
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    C1206C104K1RACTU 264
    • 1 $0.109
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    • 1000 $0.0491
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    TTI C1206C104K1RACTU Cut Tape 100
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    TME C1206C104K1RACTU 51,793 10
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    • 100 $0.0539
    • 1000 $0.0219
    • 10000 $0.0191
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    Chip 1 Exchange C1206C104K1RACTU 403
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    Avnet Asia C1206C104K1RACTU 17 Weeks 4,000
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    C1206C104K1RACTU 17 Weeks 4,000
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    Chip1Stop C1206C104K1RACTU 88,000
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    C1206C104K1RACTU 7,408
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    Component Electronics, Inc C1206C104K1RACTU 80
    • 1 $0.42
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    • 100 $0.32
    • 1000 $0.28
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    KEMET Corporation C1206C104K1RAC

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 100V 0.1uF X7R 1206 10%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics C1206C104K1RAC 34,268
    • 1 $0.17
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    • 100 $0.055
    • 1000 $0.035
    • 10000 $0.027
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    KEMET Corporation C1206C104K1RALTU

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 100V 0.1uF X7R 1206 10%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics C1206C104K1RALTU 6,700
    • 1 $0.37
    • 10 $0.243
    • 100 $0.162
    • 1000 $0.138
    • 10000 $0.11
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    KEMET Corporation C1206C104K1RAC7867

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 100V 0.1uF X7R 1206 10%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics C1206C104K1RAC7867 4,715
    • 1 $0.17
    • 10 $0.114
    • 100 $0.058
    • 1000 $0.035
    • 10000 $0.027
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    KEMET Corporation C1206C104K1RACTU (ALTERNATE: C1206C104K1RAC7800)

    Capacitor, Ceramic, Cap, .100uF, Tol 10%, SMT, 100V, X7R | KEMET C1206C104K1RACTU
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS C1206C104K1RACTU (ALTERNATE: C1206C104K1RAC7800) Bulk 471 1
    • 1 $0.162
    • 10 $0.137
    • 100 $0.126
    • 1000 $0.113
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    Find more C1206C104K1RACTU price and stock on Findchips.com

    C1206C104K1RACTU Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    C1206C104K1RAC-TU KEMET Ceramic Multilayer Capacitor; Capacitor Type:General Purpose; Capacitance:0.1uF; Capacitance Tolerance:+/- 10%; Voltage Rating:100VDC; Capacitor Dielectric Material:Multilayer Ceramic; Package/Case:1206; Termination:SMD RoHS Compliant: Yes Original PDF
    C1206C104K1RACTU KEMET Ceramic Capacitors, Capacitors, CAP CER 0.1UF 100V 10% X7R 1206 Original PDF

    C1206C104K1RACTU Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: KEMET Part Number: C1206C104K1RACTU C1206C104K1RAC7800 Capacitor, ceramic, 0.1 uF, +/-10% Tol, 100V, X7R, 1206 General Information Manufacturer: Miscellaneous Electrical: KEMET Note: Referee time for X7R dielectric for this part number is 1000 hours Electrical Specifications


    Original     		PDF C1206C104K1RACTU C1206C104K1RAC7800) 52a48e2f-f04d-43f8-9234-315659ff27c6

    SSL4120T

    Abstract: No abstract text available
    Text: UM10575 SSL4120T 90 W LED driver demo board Rev. 1 — 20 September 2012 User manual Document information Info Content Keywords SSL4120T, SSL4120DB1091, 90 W, LED driver, SSL, LLC, resonant, half-bridge, PFC, controller, converter, demo board, burst mode, user


    Original     		PDF UM10575 SSL4120T SSL4120T, SSL4120DB1091,

    ELXY

    Abstract: NPT1010 npt1010b 18121C105KAT2A ATC100B101J 6010LM 91292A012 ATC100B150J 12061C103KAT2A NITRON
    Text: NPT1010 Preliminary Datasheet Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz


    Original     		PDF NPT1010 2000MHz 900MHz 500-1000MHz EAR99 900MHz) 700mA, ELXY npt1010b 18121C105KAT2A ATC100B101J 6010LM 91292A012 ATC100B150J 12061C103KAT2A NITRON

    Untitled

    Abstract: No abstract text available
    Text: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power


    Original     		PDF NPTB00050designs 4000MHz 500-1000MHz 3A982 450mA, 3000MHz, NPTB00050 NDS-007

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT09MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT09MS031NR1 AFT09MS031GNR1 Designed for mobile two-way radio applications with frequencies from


    Original     		PDF AFT09MS031N AFT09MS031NR1 AFT09MS031GNR1 AFT09MS031NR1

    ATC600F241JT250XT

    Abstract: GRM31CR61H106KA12L ATC100A220JT150XT ATC600F220JT250XT AFT09MS031NR1 inductor 50 NH GRM31CR61H106KA12
    Text: Freescale Semiconductor Technical Data Document Number: AFT09MS031N Rev. 1, 8/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of


    Original     		PDF AFT09MS031N O-270-2 AFT09MS031NR1 AFT09MS031NR1 AFT09MS031GNR1 13ogo, 8/2012Semiconductor, ATC600F241JT250XT GRM31CR61H106KA12L ATC100A220JT150XT ATC600F220JT250XT inductor 50 NH GRM31CR61H106KA12

    NPTB00025

    Abstract: NPTB00025B AC200BM-F2 AC200B EAR99 JESD22-A114 JESD22-A115 UPW1C151MED ATC600F1R2AT
    Text: NPTB00025 Datasheet Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz


    Original     		PDF NPTB00025 4000MHz 500-1000MHz EAR99 225mA, 3000MHz, NDS-006 NPTB00025B AC200BM-F2 AC200B JESD22-A114 JESD22-A115 UPW1C151MED ATC600F1R2AT

    CTX03-18774

    Abstract: CTX03-18775 TRANSISTOR N3 CTX03 transformer EP10 GRM1885C1H100H CTX031 MAX5974A MAX5974AETE 0826-1X1T-GH-F
    Text: 19-5880; Rev 0; 5/11 MAX5974A Evaluation Kit The EV kit features a galvanically isolated 25W, 600kHz switching frequency forward DC-DC converter using the IC. The circuit achieves high efficiency up to 92% VIN = +42V using a coupled-inductor forward DC-DC


    Original     		PDF MAX5974A 600kHz MAX5969B Figure10. MAX5974A CTX03-18774 CTX03-18775 TRANSISTOR N3 CTX03 transformer EP10 GRM1885C1H100H CTX031 MAX5974AETE 0826-1X1T-GH-F

    est 7502

    Abstract: AMP50 TS3R est 7502 data sheet p634 9533 tyco ammeter selector apem ptc ECJ-3YB2A223K BJ10
    Text: Le51HE0060V2 Le58QL063 QLSLAC / Le5711/12 DSLIC™ Evaluation Board User’s Guide Rev. A, Ver. 2 October 2, 2007 Document Number: 081167 A Voice Solution ™ For more information about all Zarlink products visit our Web Site at: www.zarlink.com Information relating to products and services furnished herein by Zarlink Semiconductor Inc. trading as Zarlink Semiconductor or its subsidiaries collectively


    Original     		PDF Le51HE0060V2 Le58QL063 Le5711/12 est 7502 AMP50 TS3R est 7502 data sheet p634 9533 tyco ammeter selector apem ptc ECJ-3YB2A223K BJ10

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    Untitled

    Abstract: No abstract text available
    Text: T2G4003532-FL 30W, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T2G4003532-FL T2G4003532-FL TQGaN25

    Untitled

    Abstract: No abstract text available
    Text: NPT2020 Preliminary Gallium Nitride 48V, 50W, DC-3.5 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-3.5 GHz 48V Operation Industry Standard Package


    Original     		PDF NPT2020 NPT2020 NDS-037

    Untitled

    Abstract: No abstract text available
    Text: NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz • 60-95 W PSAT CW power from 500-1000MHz in


    Original     		PDF NPT1010 2000MHz 900MHz 500-1000MHz EAR99 900MHz) 700mA, NDS-023

    panasonic inverter dv 707 manual

    Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D
    Text: PASSIVE COMPONENTS Resistors Networks and Arrays Bourns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590, 591, 592 Caddock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593 CTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 594


    Original     		PDF

    3 phase stepper motor schematic TI

    Abstract: No abstract text available
    Text: Stellaris Stepper Motor Reference Design Kit User ’s Manual RDK-Ste ppe r-0 3 Co pyrigh t 2 007– 200 9 Te xas In strumen ts Copyright Copyright © 2007–2009 Texas Instruments, Inc. All rights reserved. Stellaris and StellarisWare are registered trademarks of Texas Instruments.


    Original     		PDF

    RLY-RLY11-DPDT

    Abstract: schematic diagram stereo amplifier 100W 2 channel 100w audio amplifier circuit diagram EB-TA2022 1N4148DICT-ND 2N7000FS-ND mini audio amplifier 2w TA2022 tyco 5V 1A DPDT RELAY TA2022-100
    Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on EB-TA2022 CLASS-T DIGITAL AUDIO AMPLIFIER 2 CHANNEL TA2022 EVALUATION BOARD Technical Information Revision 1.0 – March 2002 GENERAL DESCRIPTION The EB-TA2022 Version 4.0 is a stereo 100W per channel audio amplifier


    Original     		PDF EB-TA2022 TA2022 EB-TA2022 TA2022 TA2022, LM339 2N7000 LM358 RLY-RLY11-DPDT schematic diagram stereo amplifier 100W 2 channel 100w audio amplifier circuit diagram 1N4148DICT-ND 2N7000FS-ND mini audio amplifier 2w tyco 5V 1A DPDT RELAY TA2022-100

    NPT25100

    Abstract: NPT25100B Gan on silicon substrate Gan on silicon transistor NPT25015 ECJ5YB2A105M atc600f ATC100B1R2BT AC780BM-F2 GaN TRANSISTOR
    Text: NPT25100 Datasheet Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power


    Original     		PDF NPT25100 2700MHz 10MHz EAR99 NDS-001 NPT25100B Gan on silicon substrate Gan on silicon transistor NPT25015 ECJ5YB2A105M atc600f ATC100B1R2BT AC780BM-F2 GaN TRANSISTOR

    D260-4118-0000

    Abstract: MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac MRFE6VS25NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 1, 12/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		PDF MRFE6VS25N MRFE6VS25NR1 MRFE6VS25GNR1 MRFE6VS25N D260-4118-0000 MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac

    Untitled

    Abstract: No abstract text available
    Text: NPT2022 Gallium Nitride 48V, 100W, DC-2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-2 GHz 48V Operation Industry Standard Plastic Package


    Original     		PDF NPT2022 NPT2022 NDS-038

    Untitled

    Abstract: No abstract text available
    Text: NPT1015 Gallium Nitride 28V, 45W, DC-3.5 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •       Suitable for linear and saturated applications Tunable from DC-3.5 GHz 28V Operation Industry Standard Package


    Original     		PDF NPT1015 NPT1015 NDS-035

    transistor w 431

    Abstract: transistor 431 smd TIC 122 Transistor transistor SE 431 w 431 transistor transistor je 123 6 pin TRANSISTOR SMD CODE tm transistor+431+smd
    Text: T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Applications • • • • • • • General Purpose RF Power Jammers Military and Civilian Radar Professional and Military radio systems Wideband amplifiers Test instrumentation Avionics Product Features


    Original     		PDF T1G6001528-Q3 T1G6001528-Q3 transistor w 431 transistor 431 smd TIC 122 Transistor transistor SE 431 w 431 transistor transistor je 123 6 pin TRANSISTOR SMD CODE tm transistor+431+smd

    76SB08ST

    Abstract: Oupiin DS28DG02 DS28DG02EVKIT LTST-C150CKT LTST-C150GKT LTST-C150g Oupiin box header an4040 AN3601
    Text: Rev 1; 5/08 DS28DG02 Evaluation Board/Evaluation System The DS28DG02 evaluation system EV system consists of an evaluation board (EV board) and a Maxim CMAXQUSB command module. The EV board is a daughter card for the command module. PC connectivity is included in the kit and free evaluation software is


    Original     		PDF DS28DG02 32-bit 76SB08ST Oupiin DS28DG02EVKIT LTST-C150CKT LTST-C150GKT LTST-C150g Oupiin box header an4040 AN3601

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT21S220W02S Rev. 0, 2/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability


    Original     		PDF AFT21S220W02S AFT21S220W02SR3 AFT21S220W02GSR3 2/2014Semiconductor,

    Untitled

    Abstract: No abstract text available
    Text: NPT1015 Gallium Nitride 28V, 50W, DC-2.5 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •       Suitable for linear and saturated applications Tunable from DC-2.5 GHz 28V Operation Industry Standard Package


    Original     		PDF NPT1015 NPT1015 NDS-035