C1684 Search Results

tk 69

Abstract: C1684 FE536 GEP59 664s FE 536 8444S 54C154
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C1684

Abstract: RGEF1400
Contextual Info: PRODUCT: RGEF1400 PolySwitch PTC Devices 308 Constitution Drive Menlo Park, CA 94025-1164 Phone: 800-227-4856 www.circuitprotection.com DOCUMENT: SCD 25202 PCN: C16844 REV LETTER: D REV DATE: MARCH 7, 2008 PAGE NO.: 1 OF 1 Overcurrent Protection Device Raychem Circuit Protection Products

GF1400

Abstract: TYCO GF1400 RGEF1400
Contextual Info: Tyco / Electronics PolySwitch PTC Devices Raychem Circuit Protection 308 Constitution Drive Menlo Park, CA 94025-1164 Phone: 800-227-4856 Fax: 800-227-4866 PRODUCT: RGEF1400 DOCUMENT: SCD 25202 PCN: C16844 REV LETTER: B REV DATE: JUNE 29, 2005 PAGE NO.: 1 OF 1

Contextual Info: E H PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 4N25 4N27 4N26 4N28 PACKAGE DIMENSIONS DESCRIPTION The 4N25, 4N26, 4N27, and 4N28 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide diode. t 1 8-3 6.86

TPS5117

Abstract: Toko 10mm WPC8763L NVIDIA G84 C1740 C2068 stac9228x5 C2073 2 webcam Schematic Diagram 0735A
Contextual Info: A B C D E CPU DC/DC Hawke Intel Discrete Block Diagram CLK GEN 1 ICS9LPRS365 ISL6262A Project code : 91.4W1001.001 PCB P/N : 48.4W101.0SA Revision : 07212-SA Intel Mobile CPU 4 Merom 4M FSB:667 or 800 MHz CRT LCD RGB CRT 17 51 GDDRIII 700MHz LVDS 18 HDMI 16

Contextual Info: dUALITY TECHNOLOGIES CORP QUALITY TECHNOLOGIES e S7E D 7 4 h b Ö S 1 000354*1 4 PHOTOTRANSISTOR OPTOCOUPLERS T—41-83 MCT276 PACKAGE DIMENSIONS db The MCT276 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is

C1684 r .85 transistor

Abstract: 100JjA optocouplers 4n35 25CC 4N35 4N36 4N37 C1684 transistor transistor c1684
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLERS 0FT8ELECTB0HICS 4N35 4N36 4N37 DESCRIPTION PACKAGE DIMENSIONS “T h e 4N 35,4N 36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. FEATURES & APPLICATIONS

Contextual Info: E O TRANSISTOR OUTPUT OPTOCOUPLER OPTOELECTRONICS H11A1 DESCRIPTION PACKAGE DIMENSIONS 1 The H11A1 is a phototransistor-type optically coupled isolator. An infrared em itting diode m anufactured from specially grown gallium arsenide is selectively coupled

Contextual Info: BQ PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS 1 MCT2 PACKAG E DIMENSIONS DESCRIPTION The M C T 2 is a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting t t diode. • a SS I Œ 8.89 8.38 “ J FEATURES & APPLICATIONS

transistor c1684

Abstract: CNY17-3 CNY-17-3 c1685
Contextual Info: QUALITY •[TECHNOLOGIES VDE APPROVED p h o t o t r a n s is t o r o p t o c o u p l e r s CNY17-1/1Z CNY17-3/3Z CNY17-2/2Z CNY17-4/4Z PACKAGE DIMENSIONS tft DESCRIPTION The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor.

C1684 r .85 transistor

Abstract: transistor c1684
Contextual Info: mm QUALITY PHOTOTRANSISTOR OPTOCOUPLER • [ te c h n o lo g ie s MCT275 DESCRIPTION The M CT275 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with a high voltage NPN silicon phototransistor.

Optocoupler IC MCT2E

Abstract: MCT2E equivalent optocoupler mct2e ic MCT2e
Contextual Info: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT2E PACKAGE DIMENSIONS t 6.86 DESCRIPTION The MCT2E is a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. r* 6.35 O I W W L-w FEATURES A APPLICATIONS 8.89

C1681

Abstract: transistor c1684 c1685 NPN C1685 transistor t051
Contextual Info: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT272 PACKAGE DIMENSION! The MCT272 is a phototransistor-type optically coupled Isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor. r ~ 6.86 6.35

transistor c1684

Abstract: h11av2 equivalent H11AVI OPTOCOUPLER 636 H11AV3 H11AV2A H11AV3A 113t CL685
Contextual Info: QUALITY TECHNOLOGIES TRANSISTOR OUTPUT OPTOCOUPLER H11AV1 H11AV2 H11AV3 H11AV1A H11AV2A H11AV3A PACKAGE DIMENSIONS I G.8G 6.36 I ¥ J W The H11AV series consists of a gallium arsenide infrared emitting diode coupled with an NPN silicon phototransistor in a dual-in-line package. The H11AV1A,

Contextual Info: [£Ö PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONI CS 3 CNY17-1 CNY17-3 CNY17-2 CNY17-4 PACKAGE DIMENSION! DESCRIPTION The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. WWW High isolation voltage 5300 VAC RMS— 1 m inute

GNY17-3

Abstract: CNV17 NPN C1685 c1685 C1685 npn GNY17 C1684 C1685 transistor CNY17-2 C1243
Contextual Info: [«51 PHOTOTRANSISTOR OPTOCOUPLERS OPTOE L E CTRONI CS CNY17-1 CNY17-3 CNY17-2 CNY17-4 PACKAGE DIMENSIONS DESCRIPTION The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. rib rih rSi FEATURES 1.9 TYP ~ ï— 4.06 J twLTI

C1685

Abstract: C1685 transistor transistor c1684 smd TRANSISTOR 27e an c1685 transistor SMD Transistor 1c C1636 C1685 R transistor C1681 C1296A
Contextual Info: ÖUALITY TECHNOLOGIES CORP B7E D QUALITY TECHNOLOGIES • 74bbflSl 0GQ3577 DUAL PHOTOTRANSISTOR OPTOCOUPLERS MCT6 MCT62 MCT61 MCT66 T -4 1 -8 3 DESCRIPTION PACKAGE DIMENSIONS The MCT6X optoisoiators have two channels for high density applications. For four channel applications,

Contextual Info: su PHOTOTRANSISTOR OPTOISOLATOR OPTOELECTRONICS TIL111 PACKAGE DIMENSIONS DESCRIPTION The TIL111 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor. The device is

8 pin ic sdc 3733

Abstract: MITAC 8640 PU516 windows china tv kit STR power supply ps2 mouse diagram li-ion battery pack 14.8V RJ 49 CONNECTORS toshiba c850 PU515 SIEMENS BST h45 100
Contextual Info: SERVICE MANUAL FOR 8640 8640 BY: Dragon Jiang TESTING TESTING TECHNOLOGY TECHNOLOGY DEPARTMENT DEPARTMENT // TSSC TSSC Nov .2002 8640 N/B Maintenance Contents 1. Hardware Engineering Specification -1.1 Introduction -1.2 System Overview -1.3 System Hardware -1.4 Electrical Characteristic -

C1685 transistor

Abstract: C1684 r .85 transistor C1685 transistor c1684 C1680 C1681 TRANSISTOR C1685 C1679 C1682 C1683
Contextual Info: L y 1 • PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT2 PACKAGE DIMENSIONS DESCRIPTION The MCT2 is a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. FEATURES & APPLICATIONS AC line/digital logic isolator

capacitor 1.50 MKT 400V

Abstract: IEC 68-2-6 Vibration c1474 C3105 1.50 MKT av series C3684 mkt 1.50 400V capacitor 0 033 j mkt 250v capacitor 100 nf 100v mkt Siemens film capacitor
Contextual Info: fl235bOS GG37b47 7 • S IE G MKT Capacitors SIEMENS A K T I E N 6 E S E L L S C H A F M7E D -/ f 'C E3 B 32520 .B 32529 fS l 7 ' O S. M e ta liz a d p o ly e s te r film c a p a c ito rs in a c c o rd a n c e w it h DIN 4 4 1 1 2 VR = 63 to 6 3 0 Vdc

C1685 transistor

Abstract: transistor c1684 C1681 C2079 KJh transistor TRANSISTOR C1685 C1679 C1680 C1686 MCT271
Contextual Info: [ S PHOTOTRANSISTOR OPTOCOUPLER U OPTOELECTRONICS MCT271 DESCRIPTION PACKAGE DIMENSIONS & The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared em itting diode is selectively coupled with an NPN silicon phototransistor.

transistor c1684

Abstract: C1685 R transistor optocoupler H11A1 C1685 transistor TRANSISTOR C1685 C1685 C1684 transistor C1661
Contextual Info: TRANSISTOR OUTPUT OPTOCOUPLER PTOELECIRDNICS H11A1 DESCRIPTION PACKAGE DIMENSIONS t ~ r~ J-3 6-86 MAX 6.10 w J ' 03 J_ if f g j 8.89 _ 8.38 _ 0.2 a T - The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from

transistor c1684

Abstract: C1685 transistor C1685 R transistor C1681 TIL111 TRANSISTOR C1685 C1684 transistor C1685 npn
Contextual Info: PHOTOTRANSISTOR OPTOISOLATOR OPTDELECIRDIIICS TIL111 DESCRIPTION PACKAGE DIMENSIONS db The TIL111 is a phototransistor-type optically coupled isolator. An infrared em itting dio d e m anufactured from specially grow n gallium arsenide is selectively coupled