C50G Search Results

LMG6382QHFR

Abstract: 2506 lcd dot lcd Hitachi Scans-001 HITACHI LCD LMG63820HFR hitachi electronics
Contextual Info: 3 2 5 “" LMG6382QHFR 256 * 64 DOT LCD MODULE REFLECTIVE FILM BLACK & WHITE MODE W ITH BUILT - IN CONTROLLER AND RAM ^ H IT A C H I 1 E MAX M l 41 R A T 1 \ fj S . AB S i1J J T E E L E CIR i 1 AL T N OS RAT M SYMBOL P OWE R SUPPLY F OR LOGIC vDo-vss P OWE R

C3502

Abstract: c3504 C25M diode C2502 C3502 transistor c3501 C2503 c2504 C2501 C25M
Contextual Info: AUTOMOTIVE RECTIFIERS SENSITRON SEMICONDUCTOR OPERATING AND STORAGE TEMPERATURE –65°C TO +175°C TYPE Maximum Peak Reverse Voltage PRV VPK Maximum Forward Peak Surge Current @8.3ms Superimposed Maximum Reverse Current @PRV @25°C T A I FM Surge APK IR

cell phone

Abstract: C50A C50M working OF IC 723 single LOAD CELL C50B C50D C50G C50J C50K
Contextual Info: C50A – C50M W TE PO WE R SEM IC O ND UC TO R S 50A AUTOMOTIVE RECTIFIER CELL Features ! Diffused Junction ! ! ! ! Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX B D E C Mechanical Data ! ! ! ! A Case: Protected with Silicon Rubber

CR8-04

Abstract: 80G180 DCR604 2N684A 16RC15 C36G C141G 25SDG2JHKO S2512BK
Contextual Info: SILICON CONTROLLED RECTIFIERS Item Number Part Number 10 20 25SDG2JHKO 25SDG2JHNO 2N1794 DCR604SE0202 DCR504ST0202 MCR67-6 MCR68-6 MCR69-6 ~g~j~:~ Motorola Cl08G NCR150B C15G 2Nl773 2Nl773A NCF150C HSE5053 ClOG g~~~ 25 30 NCF150D 2N1845 2N1845A 2N1845B C36G

General Electric SCR C52T

Abstract: C52 SCR General electric SCR c50 General electric SCR C52 c52m 50 20 500 C52T scr c52u scr C50 C52 "SCR" C52E
Contextual Info: 109 PHASE CO N T R O L SCR's 63 TO 190 AMPERES C45, 46 G E TYPE C147 C 50, 52 C l 50, 152 C 60, 62 2 N 1909-16 2 N 1792-98 JEOEC C350 2N 2023-30 E L E C T R IC A L S P E C IFIC A TIO N S | V O L T A G E RA NG E 2b 1200 II 25-1200 25 120Ü 500-1300 25 500 1}

Contextual Info: C50A – C50K 50A AUTOMOTIVE CELL DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX D Anode + C E Mechanical Data      B Case: Cell Diode Passivated with Silicon Rubber

2N2213

Abstract: 2N2046 2N2545 HI-TRON 2N2344 2N2546 transitron diodes 2N2503 2n2047 16RC15 2N2044
Contextual Info: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer 2N1847A Franel Corp Inti Rectfr IntlRect JA Semitronics St Semicon Trans-Tek 2N18478 Inti Device IntlRect IT Semitronics Texas Instr 2N1848 Franel Corp Inti Rectfr IntlRect JA Semicon Com Sensitron

c50a

Abstract: C50B C50D C50G C50J C50K
Contextual Info: C50A – C50K WTE POWER SEMICONDUCTORS Pb 50A AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber Terminal: Copper Disc with Ag Plated

C50N

Abstract: NL-578D C45PB nl579a C137D C45M 579a C45E C60E C147A
Contextual Info: PHASE CONTROL SCRs RICHARDSON/ N A T I O N A L EL b2E D C137 NATIO N AL TYPE NO. • C147 7 7 3 4 11 7 0 0 D 0 7 Q Q TS4 ■ C50 C52 2N1911-16 2N1805-07 2N17931804 C45 C46 NL-S78 NL-579 JEDEC NO. NAT C50X500 C52X500 C60 C62 2N2025-30 35 63 63 80 110 110 110

ge c20f

Abstract: GE C20C ST C318 GE C10781 GE C52U C520 silicon C10781 C10702 C40E hitachi c458
Contextual Info: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer C15E C15F C15G C15M C15U C20A Pirgo Elecs C208 Pirgo Elecs C20C Pirgo Elecs C200 Pirgo Elecs C20F Pirgo Elecs C20U Pirgo Elecs C22A Pirgo C228 Plrgo C22C Pirgo C220 Pirgo C22F Pirgo C22U Plrgo

Contextual Info: C50A – C50K WTE POWER SEMICONDUCTORS Pb 50A AUTOMOTIVE CELL DIODE Features ! Diffused Junction ! ! ! ! Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX D Anode + C E

C52T

Abstract: C50E C52F C50F 2N1792 2N1793 2N1909 2N1910 2N1911 C52H
Contextual Info: High Power Silicon Controlled Rectifier 110 A RMS cso C52 25 to 1200 Volts The General Electric C50 and C52 Silicon Controlled Rectifiers are all diffused devices designed for phase control applications. FEATURES: • High dv/dt With Selection Available • Excellent Surge and I2t Ratings Providing Easy Fusing

Contextual Info: C50A – C50K WTE POWER SEMICONDUCTORS Pb 50A AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber Terminal: Copper Disc with Ag Plated

Contextual Info: C50A – C50K WTE POWER SEMICONDUCTORS Pb 50A AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber Terminal: Copper Disc with Ag Plated