C50K Search Results

C50K

Contextual Info: Double Balanced Mixers C50K 5 to 9GHz Specifications RF Frequency LO Frequency LO Power 5 to 9GHz 5 to 9GHz 10 dBm typ Transfer Characteristics Conversion Loss IF Frequency LO to RF Isolation LO to IF Isolation IP3 In P1dB In Available Package Styles Available Package Styles

Contextual Info: C50A – C50K 50A AUTOMOTIVE CELL DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX D Anode + C E Mechanical Data      B Case: Cell Diode Passivated with Silicon Rubber

c50a

Abstract: C50B C50D C50G C50J C50K
Contextual Info: C50A – C50K WTE POWER SEMICONDUCTORS Pb 50A AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber Terminal: Copper Disc with Ag Plated

C50K

Contextual Info: Double Balanced Mixers C50K 5 to 9 GHz Specifications RF Frequency LO Frequency LO Power 5 to 9 GHz 5 to 9GHz 10 dBm typ Transfer Characteristics Conversion Loss IF Frequency LO to RF Isolation LO to IF Isolation IP3 In P1dB In Available Package Styles Available Package Styles

Contextual Info: C50A – C50K WTE POWER SEMICONDUCTORS Pb 50A AUTOMOTIVE CELL DIODE Features ! Diffused Junction ! ! ! ! Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX D Anode + C E

Contextual Info: C50A – C50K WTE POWER SEMICONDUCTORS Pb 50A AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber Terminal: Copper Disc with Ag Plated

Contextual Info: C50A – C50K WTE POWER SEMICONDUCTORS Pb 50A AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber Terminal: Copper Disc with Ag Plated

C5024

Contextual Info: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package C50 Package Weight mg 620 Product Group Type No. C5020, C5024, C5036 C50A – C50K C7020, C7024, C7036 Component Die Material Solder Alloy Slug Copper Alloy Plating Silver

SMD DIODE UF4007

Abstract: 1N5819 SOD-323 1N4007 sod-123 1a7 sot-23 FR107 SOD-123 uf5408 SMD diode Bosch alternator diode bosch alternator 1N5822 SMD 1n5400 smd
Contextual Info: SELECTOR GUIDES WTE POWER SEMICONDUCTORS Pb Automotive Rectifiers Superfast Recovery Rectifiers Automotive Rectifiers are intended for use in automobile and high current applications. Won-Top Electronics manufactures a full range of performance characteristics Press Fit Diodes, Button Diodes and

MIL I 23659

Abstract: 42058
Contextual Info: C50KGD, TMP320BC51KGD DIGITAL SIGNAL PROCESSOR KNOWN GOOD DIE S G ZS 008-JU LY 1996 • F as t Instr uct i on Cy c l e T i me s of 35 ns and SO ns • S o u r c e - C o d e C o m p a t i b l e With all ’C 1 x and ’C2 x D e v i c e s • 1 6- Bi t Parall el L ogi c Uni t P L U

B634X

Abstract: lu1414 Standard TTL AOI Dual 2-Wide 2-Input LU18 c17b2 H8E0
Contextual Info: FUJITSU MICROELECTRONICS 31E I El 3 7 i n 7 ba ÜG13>435 b B F M 0 T - n - l - D January 1990 Edition 1.1 P R O D U C T PR OFILE AU Series CMOS Gate Arrays DESCRIPTION Tha AU series of 1 .2 |im CMOS gate arrays, available in eight device types with from 1 0 K to 100K gates, achieves the ultra fast

t2d 64

Abstract: lu1414 fdn 156 MB631XXX LU18 mb633
Contextual Info: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE AU Series CMOS Gate Arrays DESCRIPTION The AU series of 1.2 Jim CMOS gate arrays, available in eight device types with from 10K to 100K gates, achieves the ultra fast speed of 0.6 ns per gate. Thanks to the channel-free structure of the AU gate array, AU basic cells can be used for logic cells,

7404

Contextual Info: C50KGD, C50KGD DIGITAL SIGNAL PROCESSOR KNOWN GOOD DIE SGZS008C – JULY 1996 – REVISED JUNE 2000 D 25-ns, 35-ns, and 50-ns Single-Cycle D D D D D D Instruction Execution Time for 5-V Operation 50-ns Single-Cycle Instruction Execution Time for 3.3-V Operation

C3502

Abstract: c3504 C25M diode C2502 C3502 transistor c3501 C2503 c2504 C2501 C25M
Contextual Info: AUTOMOTIVE RECTIFIERS SENSITRON SEMICONDUCTOR OPERATING AND STORAGE TEMPERATURE –65°C TO +175°C TYPE Maximum Peak Reverse Voltage PRV VPK Maximum Forward Peak Surge Current @8.3ms Superimposed Maximum Reverse Current @PRV @25°C T A I FM Surge APK IR

counter 7468

Abstract: 74565 MIL I 23659 6884 TMP320C50KGD 68840
Contextual Info: C50KGD, TMP320BC51KGD DIGITAL SIGNAL PROCESSOR KNOWN GOOD DIE SGZS008A – JULY 1996 – REVISED JUNE 1997 D D D D D D Fast Instruction Cycle Times of 35 ns and 50 ns Source-Code Compatible With all ’C1x and ’C2x Devices RAM-Based Operation – 9K-Words x 16-Bit Dual-Access On-Chip

Acc 2089

Abstract: TMP320C50KGD TMP320LC50KGD SPRS030
Contextual Info: C50KGD, C50KGD DIGITAL SIGNAL PROCESSOR KNOWN GOOD DIE SGZS008C − JULY 1996 − REVISED JUNE 2000 D 25-ns, 35-ns, and 50-ns Single-Cycle D D D D D D Instruction Execution Time for 5-V Operation 50-ns Single-Cycle Instruction Execution Time for 3.3-V Operation

Acc 2089

Abstract: TMP320C50KGD TMP320LC50KGD 446526 Texas instruments military products
Contextual Info: C50KGD, C50KGD DIGITAL SIGNAL PROCESSOR KNOWN GOOD DIE SGZS008C – JULY 1996 – REVISED JUNE 2000 D 25-ns, 35-ns, and 50-ns Single-Cycle D D D D D D Instruction Execution Time for 5-V Operation 50-ns Single-Cycle Instruction Execution Time for 3.3-V Operation

B50K

Abstract: c36k
Contextual Info: Double Balanced Mixers COMMUNICATIONS BAND MIXERS ♦ ♦ ♦ ♦ ♦ Wide Range of Connection Types including SMA, Pin, Drop-In, Tab High Isolation Low Conversion Loss Quick Delivery Time Low Cost Operating Temperature Range = -55°C to +100°C Storage Temperature Range = -6S°C to +125°C

mb633

Abstract: QFP196 mb631 SQF-P25 QFP-1002 MB63XXXX
Contextual Info: RPR 2 1993 August 1990 Edition 4.0 DATA SHEET f u j Ît s u : MB63XXXX AU SERIES CMOS GA TE ARRA YS_ DESCRIPTION The AU series of 1 2|j.m CMOS gate arrays, available in 8 types with from 10K to 100K gates, has ultra fast speed of 0.6ns per gate. Thanks to its channel-free structure, basic cells packed are usable for logic cell as well as memory cell, or wiring areas in order to achieve the desired

SPRS030

Abstract: 224K-word XDS510PP dsp processor Architecture of TMS320C5X
Contextual Info: C50KGD, C50KGD DIGITAL SIGNAL PROCESSOR KNOWN GOOD DIE SGZS008C – JULY 1996 – REVISED JUNE 2000 D 25-ns, 35-ns, and 50-ns Single-Cycle D D D D D D Instruction Execution Time for 5-V Operation 50-ns Single-Cycle Instruction Execution Time for 3.3-V Operation

TMS320C50DU

Contextual Info: C50KGD, C50KGD DIGITAL SIGNAL PROCESSOR KNOWN GOOD DIE SGZS008C – JULY 1996 – REVISED JUNE 2000 D 25-ns, 35-ns, and 50-ns Single-Cycle D D D D D D Instruction Execution Time for 5-V Operation 50-ns Single-Cycle Instruction Execution Time for 3.3-V Operation

Contextual Info: C50KGD, C50KGD DIGITAL SIGNAL PROCESSOR KNOWN GOOD DIE SGZS008C - JULY 1996 - REVISED JUNE 2000 D 25-ns, 35-ns, and 50-ns Single-Cycle D D D D D D Instruction Execution Time for 5-V Operation 50-ns Single-Cycle Instruction Execution Time for 3.3-V Operation

TMP320C50KGD

Abstract: TMP320LC50KGD 8405
Contextual Info: C50KGD, C50KGD DIGITAL SIGNAL PROCESSOR KNOWN GOOD DIE SGZS008B – JULY 1996 – REVISED JUNE 1999 D D D D D D D 35-ns and 50-ns Single-Cycle Instruction Execution Time for 5 V Operation 50-ns Single-Cycle Instruction Execution Time for 3.3 V Operation

Acc 2089

Abstract: TMP320C50KGD TMP320LC50KGD
Contextual Info: C50KGD, C50KGD DIGITAL SIGNAL PROCESSOR KNOWN GOOD DIE SGZS008C – JULY 1996 – REVISED JUNE 2000 D 25-ns, 35-ns, and 50-ns Single-Cycle D D D D D D Instruction Execution Time for 5-V Operation 50-ns Single-Cycle Instruction Execution Time for 3.3-V Operation