Mimix Broadband
Abstract: Characteristic of mesfet GaAs MESFET CF005 MESFET
Text: Broadband Power GaAs MESFET Chips August 2006 - Rev 03-Aug-06 CF005 Series Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 4 Characteristic Data and Specifications are subject to change without notice. 2006 Mimix Broadband, Inc.
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03-Aug-06
CF005
Mimix Broadband
Characteristic of mesfet
GaAs MESFET
MESFET
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4600
Abstract: MESFET CF015-11
Text: Broadband Power GaAs MESFET Chip August 2006 - Rev 03-Aug-06 CF015-11 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 1 Characteristic Data and Specifications are subject to change without notice. 2006 Mimix Broadband, Inc.
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03-Aug-06
CF015-11
4600
MESFET
CF015-11
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CF010
Abstract: GaAs MESFET MIMIX BROADBAND
Text: Broadband Power GaAs MESFET Chips August 2006 - Rev 03-Aug-06 CF010 Series Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 4 Characteristic Data and Specifications are subject to change without notice. 2006 Mimix Broadband, Inc.
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03-Aug-06
CF010
GaAs MESFET
MIMIX BROADBAND
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pseudomorphic HEMT
Abstract: CF004
Text: GaAs Pseudomorphic HEMT and MESFET Chips August 2006 - Rev 03-Aug-06 CF004 Series Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 4 Characteristic Data and Specifications are subject to change without notice. 2006 Mimix Broadband, Inc.
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03-Aug-06
CF004
pseudomorphic HEMT
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pseudomorphic
Abstract: HEMT CF001 MESFET
Text: GaAs Pseudomorphic HEMT and MESFET Chips August 2006 - Rev 03-Aug-06 CF001 Series Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 4 Characteristic Data and Specifications are subject to change without notice. 2006 Mimix Broadband, Inc.
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03-Aug-06
CF001
pseudomorphic
HEMT
MESFET
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CF003
Abstract: hemt
Text: GaAs Pseudomorphic HEMT and MESFET Chips August 2006 - Rev 03-Aug-06 CF003 Series Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 4 Characteristic Data and Specifications are subject to change without notice. 2006 Mimix Broadband, Inc.
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03-Aug-06
CF003
hemt
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GC122
Abstract: DC TO 18GHZ RF AMPLIFIER MMIC mmic distributed amplifier RAYTHEON RMM2080 high power fet amplifier schematic wideband automatic gain control S11510 dual-gate
Text: RMM2080 2-18 GHz Wideband Variable-Gain Driver Amplifier PRODUCT INFORMATION Description Features The Raytheon RMM2080 GaAs MMIC device is a three-stage distributed medium-power amplifier with gain control capability. The circuit incorporates ion-implanted, 0.5-µm gate MESFET devices fabricated on a semi-insulating
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RMM2080
RMM2080
4x125
4x250
3x500
10GHz
18GHz
GC122
DC TO 18GHZ RF AMPLIFIER MMIC
mmic distributed amplifier
RAYTHEON
high power fet amplifier schematic
wideband automatic gain control
S11510
dual-gate
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RAYTHEON
Abstract: an 7073 Raytheon Company RMM2080 dual-gate GC122
Text: RMM2080 2-18 GHz Wideband Variable-Gain Driver Amplifier PRODUCT INFORMATION Description Features The Raytheon RMM2080 GaAs MMIC device is a three-stage distributed medium-power amplifier with gain control capability. The circuit incorporates ion-implanted, 0.5-µm gate MESFET devices fabricated on a semi-insulating
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RMM2080
RMM2080
4x125
4x250
3x500
RAYTHEON
an 7073
Raytheon Company
dual-gate
GC122
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dual-gate
Abstract: GC122
Text: RMM2080 2-18 GHz Wideband Variable-Gain Driver Amplifier PRODUCT INFORMATION Description Features The Fairchild Semiconductor's RMM2080 GaAs MMIC device is a three-stage distributed medium-power amplifier with gain control capability. The circuit incorporates ion-implanted, 0.5-µm gate MESFET devices fabricated on a
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RMM2080
RMM2080
4x125
4x250
3x500
dual-gate
GC122
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CFA0301-A
Abstract: CF003-01 CFB0301-B CFB0301
Text: GaAs MESFET Transistor CF003-01 July 2008 - Rev 15-Jul-08 Features High Gain: 8 dB at 12 GHz P1dB Power: 22 dBm Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF003-01 GaAs-based transistor is a 600 um gate width, sub-half-micron gate length GaAs device with Silicon
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CF003-01
15-Jul-08
CF003-01
CF003-01-000X
CFA0301-A
CFB0301-B
CFB0301
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CF001-01
Abstract: CFB0101 CFB0101B CFA0101A CF001 GaAs MESFET
Text: GaAs MESFET Transistor CF001-01 March 2008 - Rev 15-Mar-08 Features High Gain: Usable to 44 GHz P1dB Power: 21 dBm Wfer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF001-01 GaAs-based transistor is a 300 um gate width, sub-half-micron gate length GaAs device with Silicon
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CF001-01
15-Mar-08
CF001-01
CF001-01-000X
CFB0101
CFB0101B
CFA0101A
CF001
GaAs MESFET
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GaAs FET operating junction temperature
Abstract: TRANSISTOR 318a mesfet datasheet by motorola MRF9811T1
Text: MOTOROLA Order this document by MRF9811T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Small Signal Line Gallium Arsenide MRF9811T1 N–Channel Depletion–Mode MESFET Designed for use in driver stages of moderate power RF amplifiers to 2 GHz.
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MRF9811T1/D
MRF9811T1
MRF9811T1
GaAs FET operating junction temperature
TRANSISTOR 318a
mesfet datasheet by motorola
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mc331694
Abstract: mrf 510 MRF MOSFET GaAs FET operating junction temperature mesfet datasheet by motorola motorola mrf DCS1800 MC33169 MMBD701 MMSF4N01HD
Text: Order this document by MC33169/D MC33169 Advance Information GaAs Power Amplifier Support IC The MC33169 is a support IC for GaAs Power Amplifier Enhanced FETs used in hand portable telephones such as GSM, PCN and DECT. This device provides negative voltages for full depletion of Enhanced MESFETs
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MC33169/D
MC33169
MC33169
DCS1800
MC33169/D*
mc331694
mrf 510
MRF MOSFET
GaAs FET operating junction temperature
mesfet datasheet by motorola
motorola mrf
DCS1800
MMBD701
MMSF4N01HD
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MRF9820T1
Abstract: 16 SOT-143 MOTOROLA
Text: MOTOROLA Order this document by MRF9820T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Small Signal Line GaAs MESFET AGC Amplifier MRF9820T1 The MRF9820T1 is a high performance GaAs AGC amplifier suitable for use in low noise front end amplifier or downconverter applications. The device
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MRF9820T1/D
MRF9820T1
MRF9820T1
16 SOT-143 MOTOROLA
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ITT8507D
Abstract: No abstract text available
Text: 6W Power Amplifier Die 13.0 – 14.5 GHz ITT8507D ADVANCED INFORMATION FEATURES • • • • • Broadband Performance 20% Typical Power Added Efficiency at P1dB 17 dB Typical Gain at P1dB 50Ω Input/Output Impedance Self-Aligned MSAG MESFET Process
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ITT8507D
ITT8507D
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Untitled
Abstract: No abstract text available
Text: 6W Power Amplifier Die 13.0 – 14.5 GHz ITT8507D ADVANCED INFORMATION Features • • • • • Broadband Performance 20% Typical Power Added Efficiency at P1dB 17 dB Typical Gain at P1dB 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process
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ITT8507D
ITT8507D
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mc331694
Abstract: mesfet datasheet by motorola DCS1800 MC33169 MMBD701 MMSF4N01HD MRFIC0913 MRF transistor
Text: Order this document by MC33169/D MC33169 GaAs Power Amplifier Support IC The MC33169 is a support IC for GaAs Power Amplifier Enhanced FETs used in hand–held telephones such as GSM and PCS. This device provides negative voltages for full depletion of Enhanced MESFETs as well as a
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MC33169/D
MC33169
MC33169
DCS1800
mc331694
mesfet datasheet by motorola
MMBD701
MMSF4N01HD
MRFIC0913
MRF transistor
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF9811T1 The RF Small Signal Line G allium Arsenide N-Channel Depletion-Mode MESFET Designed for use in driver stages of moderate power RF amplifiers to 2 GHz. Typical ap p lic atio n s are ce llu la r radio s and personal com m unication
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MRF9811T1
MRF9811T1
18A-05,
OT-143)
MRF9611T1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF9811T1 The RF Small Signal Line Gallium Arsenide N-Channel Depletion-Mode MESFET Designed for use in driver stages of moderate power RF amplifiers to 2 GHz. Typical applications are cellular radios and personal communication
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MRF9811T1
MRF9811T1
18A-05,
OT-143)
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mc331694
Abstract: Voltage Doubler application mc3316940 RF switch negative voltage generator
Text: 8 < MOTOROLA > MC33169 A dvance Inform ation GaAs Power Amplifier Support 1C GaAs POWER AMPLIFIER SUPPORT IC The M C33169 is a support IC for GaAs Power Amplifier Enhanced FETs used in hand portable telephones such as GSM- PCN and DECT. This device provides negative voltages for full depletion of Enhanced MESFETs
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MC33169
C33169
DCS1800
MRFIC0913,
MC33169
mc331694
Voltage Doubler application
mc3316940
RF switch negative voltage generator
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16pin 502
Abstract: No abstract text available
Text: Raytheon Electronics iliSS ìww% MHz G aAs MMIC Driver Amplifier Description The Raytheon RMDA0900-41 is a monolithic driver amplifier for use in CDMA digital systems or analog cellular systems. The circuit uses a 0.5 GaAs Enhancement/ Depletion MESFET low noise process. This process
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RMDA0900-41
16-pin
16pin 502
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sumitomo crm epoxy 1061
Abstract: crm-1061 sumitomo crm epoxy sumitomo crm 1061 sumitomo crm specification L444 NLG2131 AS21 sumitomo epoxy crm CRM1061
Text: NEL MARCH 2 7 , 1995 NLG2131 ULTRA-WIDEBAND AMPLIFIER The NLG2131 is a GaAs MESFET IC that performs signal amplification over the wide frequency range extending from lOOKHz to 8GHz. This IC is applicable to 10 Gb/s optical fiber communication sy stem s. The NLG2131 is fabricated using the 0.15 ¿¿m gate length A-SAINT Advanced Self-A ligned
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NLG2131
NLG2131
10MHz
100KHz
d-S21
100KHz
100KHz-7
sumitomo crm epoxy 1061
crm-1061
sumitomo crm epoxy
sumitomo crm 1061
sumitomo crm specification
L444
AS21
sumitomo epoxy crm
CRM1061
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mc331694
Abstract: No abstract text available
Text: Order this document by MC33169/D MOTOROLA M C 33169 GaAs Power A m plifier Support 1C The MC33169 is a support IC for GaAs Power Am plifier Enhanced FETs used in hand-held telephones such as GSM and PCS. This device provides negative voltages for full depletion of Enhanced MESFETs as well as a
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MC33169/D
MC33169
DCS1800
mc331694
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Advance Information GaAs POWER AMPLIFIER SUPPORT IC GaAs Power Amplifier Support 1C The MC33169 is a support IC lo r G aAs Power Amplifier Enhanced FETs used in hand portable telephones such as GSM, PCN and DECT. This device provides negative voltages for full depletion of Enhanced MESFETs
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MC33169
DCS1800
MC33169
MRFIC0913,
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