CT2010ALN Search Results

Contextual Info: TITLE: ENGINEERING CONTROL DRAWING. PART IDENTIFIER: CT2010ALN DESCRIPTION: HIGH POWER CHIP TERMINATION, ALUMINUM NITRIDE ASSEMBLY DWG: 1101534 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 IMPEDANCE: 50Ω NOMINAL. 1.1.2 FREQUENCY: DC - 4 GHZ. 1.1.3 VSWR: 1.25:1 MAX.

Contextual Info: TITLE: ENGINEERING CONTROL DRAWING. PART IDENTIFIER: CT2010ALNF DESCRIPTION: HIGH POWER CHIP TERMINATION, ALUMINUM NITRIDE LEAD FREE PLATING ASSEMBLY DWG: 1101654 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 IMPEDANCE: 50Ω NOMINAL. 1.1.2 FREQUENCY: DC - 4 GHZ.

CT2010ALNF

Abstract: 1010135 MIL-STD-454 requirement 9
Contextual Info: TITLE: ENGINEERING CONTROL DRAWING. PART IDENTIFIER: CT2010ALNF DESCRIPTION: HIGH POWER CHIP TERMINATION, ALUMINUM NITRIDE LEAD FREE PLATING ASSEMBLY DWG: 1101654 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 IMPEDANCE: 50Ω NOMINAL. 1.1.2 FREQUENCY: DC - 4 GHZ.

CT2010ALN

Abstract: 1009055 MIL-STD-454
Contextual Info: TITLE: ENGINEERING CONTROL DRAWING. PART IDENTIFIER: CT2010ALN DESCRIPTION: HIGH POWER CHIP TERMINATION, ALUMINUM NITRIDE ASSEMBLY DWG: 1101534 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 IMPEDANCE: 50Ω NOMINAL. 1.1.2 FREQUENCY: DC - 4 GHZ. 1.1.3 VSWR: 1.25:1 MAX.

tva0300n07

Abstract: mmic amplifier marking code N10 MTVA0300N05 PST-02-A-1 TVA0300N07W3 electronic passive components catalog SC-1016 MTVA0300 SMT2010TALN 42TVA
Contextual Info: EMC TECHNOLOGY Custom Engineered Solutions 8851 SW Old Kansas Ave. 772 286-9300 ISO 9001 & 14001 Certified M I C R OWAV E C O M P O N E N T S www.emct.com Resistive Products, Smart Loads , High Reliability Stuart, FL 34997 (800) 544-5594 Thermopads®, Equalizers,

ina 124

Abstract: CT2525ALN "beryllium oxide" HR0500 ct2335 SMT3725ALN SC0066M
Contextual Info: SES 1 Index Tedmolo^ii L Product Index EM C P art Num ber Description Pow er Level W Substrate M aterial M ax VSWR M ax Frequency (G Hz) Page N um ber TVA Series Thermopads 2 Alum ina 1.30:1 6 GHz 12 M TVAXXXXN XX Thermopads 0.2 A lum ina 1.30:1 18 GHz

CT2525ALN

Abstract: CT2010A
Contextual Info: f*TTTS Tedm ohm/ Term inations Chips - Standard EMC's high power chip terminations are optimized fo r RF performance. All EMC chips are designed to minimize the variability o f capacitive reactance. Localized hot spots associated with trimming have been eliminated. Reduced

CT-1005

Abstract: g 0247 0372
Contextual Info: lin T u l litologi/ Chips - Standard Term inations S election Table Power W Substrate Frequency Max. Avg. (GHz) VSWR Type 2 5 5 10 15 15 15 15 20 20 20 40 50 80 85 100 120 120 150 150 150 250 * BeO Alumina AIN BeO BeO AIN BeO AIN BeO AIN Alumina AIN BeO

CT2525ALN

Abstract: CT3523 CT2010A
Contextual Info: Chips – Standard Terminations EMC’s high power chip terminations are optimized for RF performance. All EMC chips are designed to minimize the variability of capacitive reactance. Localized hot spots associated with trimming have been eliminated. Reduced