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    CXK581020 Search Results

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    CXK581020 Price and Stock

    Sony Batteries CXK581020J-45

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    Bristol Electronics CXK581020J-45 1,885
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    Quest Components CXK581020J-45 1,508
    • 1 $6.21
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    • 100 $6.21
    • 1000 $2.484
    • 10000 $2.1735
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    CXK581020J-45 9
    • 1 $4.35
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    Chip 1 Exchange CXK581020J-45 31
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    Sony Batteries CXK581020J-35

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    Bristol Electronics CXK581020J-35 764 1
    • 1 $9.52
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    Quest Components CXK581020J-35 611
    • 1 $12.75
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    CXK581020J-35 409
    • 1 $15
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    CXK581020J-35 3
    • 1 $10.2
    • 10 $7.48
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    Sony Semiconductor CXK581020J-45

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    Bristol Electronics CXK581020J-45 6
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    Quest Components CXK581020J-45 661
    • 1 $6.21
    • 10 $6.21
    • 100 $2.691
    • 1000 $2.484
    • 10000 $2.484
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    Sony Batteries CXK581020SP-45

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    Quest Components CXK581020SP-45 2
    • 1 $87.5396
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    CXK581020 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CXK581020SJ-35 Sony 131,072-word x 8 Bit High Speed CMOS Static RAM Original PDF
    CXK581020SJ-45 Sony 131,072-word x 8 Bit High Speed CMOS Static RAM Original PDF
    CXK581020SJ-55 Sony 131,072-word x 8 Bit High Speed CMOS Static RAM Original PDF
    CXK581020SP-35 Sony 131,072-word x 8 Bit High Speed CMOS Static RAM Original PDF
    CXK581020SP-45 Sony 131,072-word x 8 Bit High Speed CMOS Static RAM Original PDF
    CXK581020SP-55 Sony 131,072-word x 8 Bit High Speed CMOS Static RAM Original PDF

    CXK581020 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    km681001j-20

    Abstract: TC55B328J-12 256Kx4 TC55B465J10 TC55B8128J20 PDM41028SA-15SO TC55B8128J-12 TC55328J-20 KM681001J-25 PDM41024S20
    Text: Cross Reference Guide Cross Reference Guide ALLIANCE VS PARADIGM AS7C1024-10TJ AS7C1024-12TJ AS7C1024-15TJ AS7C1024-20TJ AS7C1024L-10TJ AS7C1024L-12TJ AS7C1024L-15TJ AS7C1024L-20TJ AS7C1028-10TJ AS7C1028-12TJ AS7C1028-15TJ AS7C1028-20TJ AS7C1028L-10TJ AS7C1028L-12TJ


    Original     		PDF AS7C1024-10TJ AS7C1024-12TJ AS7C1024-15TJ AS7C1024-20TJ AS7C1024L-10TJ AS7C1024L-12TJ AS7C1024L-15TJ AS7C1024L-20TJ AS7C1028-10TJ AS7C1028-12TJ km681001j-20 TC55B328J-12 256Kx4 TC55B465J10 TC55B8128J20 PDM41028SA-15SO TC55B8128J-12 TC55328J-20 KM681001J-25 PDM41024S20

    CXK581020

    Abstract: L7C109WC25 L7C109WI17 5962-89598 smd diode K10 smd transistor A6 3 MT5C1008 L7C109WI20 L7C108YMB25 L7C108DMB25
    Text: L7C108/109 128K x 8 Static RAM L7C108/109 DEVICES INCORPORATED 128K x 8 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 128K x 8 Static RAM with Chip Select Powerdown, Output Enable q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 17 ns maximum


    Original     		PDF L7C108/109 MIL-STD-883, CY7C108/109, IDT71024/71B024, MT5C1008, MCM6226A/62L26A, CXK581020 32-pin CXK581020 L7C109WC25 L7C109WI17 5962-89598 smd diode K10 smd transistor A6 3 MT5C1008 L7C109WI20 L7C108YMB25 L7C108DMB25

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original     		PDF CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51

    UM61256AK-15

    Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE


    Original     		PDF CP005-1E AS7C1024-12JC AS7C1024-12PC AS7C1024-12TJC AS7C1024-12TPC AS7C1024-15JC AS7C1024-15PC AS7C1024-15TJC AS7C1024-15TPC AS7C1024-20JC UM61256AK-15 UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256

    L7C108WC25

    Abstract: MT5C1008 l7c109wi25
    Text: L7C108/109 L7C108/109 DEVICES INCORPORATED 128K x 8 Static RAM Low Power 128K x 8 Static RAM (Low Power) DEVICES INCORPORATED FEATURES DESCRIPTION q 128K x 8 Static RAM with Chip Select Powerdown, Output Enable q Auto-Powerdown Design q Advanced CMOS Technology


    Original     		PDF L7C108/109 MIL-STD-883, CY7C108/109, IDT71024/71B024, MT5C1008, MCM6226A/62L26A, CXK581020 32-pin L7C108WC25 MT5C1008 l7c109wi25

    L7C108WI15

    Abstract: mt5c1008 62L26A
    Text: L7C108/109 L7C108/109 DEVICES INCORPORATED 128K x 8 Static RAM Low Power 128K x 8 Static RAM (Low Power) DEVICES INCORPORATED DESCRIPTION O CE 1 WE OE CE 2 (L7C109 only) ROW SELECT ROW ADDRESS 9 CONTROL consume only 1.5 mW (typical), at 3 V, allowing effective battery backup


    Original     		PDF L7C108/109 L7C109 L7C108 L7C109KC15* L7C109KC12* L7C109KC10* L7C109YM15 L7C109YM12 L7C108WI15 mt5c1008 62L26A

    CXK581020AJ

    Abstract: CXK581020AJ-25 32PIN CXK581020AJ-20 CXK58102QAJ scu32
    Text: SONY CXK581020AJ 131072-words x 8-bits High Speed CMOS Static RAM Description The CXK581020AJ is a high speed CM O S static 32 pin S O J Plastic RAM organized as 131072-words by 8 bits. It operates at 20ns/25ns access time from 5V single power supply. The CXK581020AJ is suitable for use in high


    OCR Scan     		PDF 131072-words CXK581020AJ 20ns/25ns CXK581020AJ-20 CXK581020AJ-25 990mW 32PIN CXK58102QAJ scu32

    Untitled

    Abstract: No abstract text available
    Text: CXK581020SP/J -35/45/55 SONY 131072-word X 8-bit High Speed CMOS Static RAM Description C X K 5810 20S P /J are 131,072-word x 8 -bit high speed CMOS static RAMs suitable fo r use in high speed and low power applications. Organized as 131,072 words by 8 bits, it


    OCR Scan     		PDF CXK581020SP/J 131072-word 072-word CXK581020SP 581020S P/J-35 CXK5810 P/J-55 XK581020SP/J-35,

    Untitled

    Abstract: No abstract text available
    Text: SONY Ç X K 5 8 1 2 S P / J -35/45/55 131072-word x 8-bit High Speed CM O S Static RAM D escription CXK581020SP 32 pin DIP Plastic C X K 5 8 1 0 2 0 S P /J are 1 3 1 ,0 7 2 -w o rd x 8 -b it high speed CMOS sta tic RAMs suitable fo r use in high speed and low power applications.


    OCR Scan     		PDF 131072-word CXK581020SP CXK581020J CXK581020SP/J XK581020SP 01P032-P -040Q 581020J

    CXK581020J

    Abstract: sony cxk581020j static ram 2015
    Text: CXK 581020 SP/J SONY 131072-word X -35/45/55 8-bit High Speed CMOS Static RAM Description CXK581020SP 32 pin DIP Plastic CXK581 0 2 0 S P / J are 1 3 1 ,0 7 2 -w o rd x 8 -b it high speed CMOS sta tic RAMs suitable fo r use in high speed and lo w power applications.


    OCR Scan     		PDF CXK581020SP/J 131072-word CXK581 020SP/J 072-word 020SP/ 020SP/J-45 CXK581020SP/J-55 CXK581020J sony cxk581020j static ram 2015

    Untitled

    Abstract: No abstract text available
    Text: CXK581020SP/J -35/45/55 SONY* 131072-word x 8-bit High Speed CMOS Static RAM D escription C X K 5 8 1 0 2 0 S P /J are CXK581020J 32 pin SOJ Plastic CXK581020SP 32 pin DIP (Plastic) 1 3 1 ,0 7 2 -w o rd X 8 - b it h ig h speed CM OS s ta tic R A M s s u ita b le f o r use


    OCR Scan     		PDF CXK581020SP/J CXK581020SP CXK581020J 131072-word CXK581020SP/J 581020SP CXK581020J

    CXK581020A

    Abstract: CXK581020AJ-25 SCU032-P-C400-A
    Text: SONY C X K 581020A J • ” *» 131072-words x 8-bits High Speed CMOS Static RAM Description 32 pin SO J Plastic The CXK581020AJ is a high speed CMOS static RAM organized as 131072-words by 8 bits. It operates at 20ns/25ns access time from 5V single power supply.


    OCR Scan     		PDF 81020A 131072-words CXK581020AJ 20ns/25ns CXK581Q20AJ-20 CXK581020AJ-25 CXK581020AJ-20 990mW CXK581020A SCU032-P-C400-A

    CXK581020J

    Abstract: No abstract text available
    Text: 54E D 0365303 D0D4fl34 11T MSONY «2.3* - / y CXK581020SP/J -35/45/55 SONY 131072-word x 8-bit High Speed CMOS Static RAM S O NY CORP/COMPONENT Description P ROD S C X K 5 8 1 02 0 S P 3 2 pin DIP Plastic C X K 5 8 1 0 2 0 S P /J are 1 3 1 ,0 7 2 -w o rd x 8 -b it


    OCR Scan     		PDF D0D4fl34 CXK581020SP/J 131072-word CXK581020SP 072-word CXK581020SP/J-35 CXK581020SP/ CXK581020SP/J-55 CXK581020J

    232Z2

    Abstract: 109kc
    Text: — “ “ _ ._——— L7C108/109 jtv î;fs incorpüha i - . 12 8K x 8 Static R A M Low Power DESCRIPTION FEATURES □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum


    OCR Scan     		PDF L7C108/109) L7C108-L/109-L) MIL-STD-883, CY7C108/109, IDT71024/71B024, V1T5C1008, MCM6226A 62L26A, CXK581020 32-pin 232Z2 109kc

    Untitled

    Abstract: No abstract text available
    Text: I 7 n in a /in Q v wms _mt — DEVICES INCORPORATED FEATURES 1 0 8 / 1 0 9 128K x 8 Static RAM Low Power DESCRIPTION □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 17 ns maximum


    OCR Scan     		PDF MIL-STD-883, CY7C108/109, IDT71024/71B024, MT5C1008, MCM6226A/62L26A, CXK581020 32-pin L7C109 L7C109KC25*

    Untitled

    Abstract: No abstract text available
    Text: £ O Q l C D E V IC E S IN C O R P O R A T E D L 7 C 1 0 8 / 1 0 9 128K x 8 Static RAM Low Power ESCRIPTION □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ □ □ □ Auto-Powerdown Design Advanced CMOS Technology High Speed — to 17 ns maximum


    OCR Scan     		PDF MIL-STD-883, CY7C108/109, IDT71024/71B024, MT5C1008, MCM6226A/62L26A, CXK581020 32-pin 32-pin 108/9-J

    a1012L

    Abstract: No abstract text available
    Text: L Ö Q IC L7C108/109 128K x 8 Static RA M D E V I C E S INCORHHHATE ' DESCRIPTION FEATURES □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 17 ns maximum □ Low Power Operation


    OCR Scan     		PDF L7C108/109 L7C108 L7C109 TheL7C108has reduc00 03/21/95-LDS 108/9-F a1012L

    organizational structure samsung

    Abstract: NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256
    Text: Static RAM Cross Reference STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 2K 2K X X 32K 8K X e w/CE, OE 8 W/CE1, CE2 X 8 Stow 8 Slow COMPETITIVE VENDOR SH ARP MODEL LH5116 LH5118 LH51256 LH5164A AMD Am9128 Harris CDM6116 Hitachi HM6116A Hyundai HY6116


    OCR Scan     		PDF LH5116 Am9128 CDM6116 HM6116A HY6116 HM6116 MS6516 SRM2016 MK6116 CXK5816 organizational structure samsung NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A

    Untitled

    Abstract: No abstract text available
    Text: l o L 7 C 10 8 /10 9 128K x 8 Static RAM g i c D E V IC E S IN C O R P O R A T E D FEATURES DESCRIPTION □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 17 ns maximum


    OCR Scan     		PDF MIL-STD-883, CY7C108/109, IDT710 MT5C1008, 226A/62L26A, CXK581020 32-pin L7C108/109

    Untitled

    Abstract: No abstract text available
    Text: L 7 C 1 0 8 / 1 0 9 128K x 8 Static R A M L o w Power □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 17 ns maximum □ Low Power Operation Active: 550 mW typical at 25 ns


    OCR Scan     		PDF MIL-STD-883, IDT71024/71B024, MT5C1008, MCM6226A 62L26A, CXK581020 32-pin L7C108

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100

    K93C46

    Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257


    OCR Scan     		PDF 416C256 14800A 14900A 514170B 514280B KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP HN624017FB K93C46 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256

    TC55B8128

    Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6


    OCR Scan     		PDF TC511001 TC514101 514170B 514280B TC5316200P KM2X16100 KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP TC55B8128 KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256