CXK581020 Search Results

CXK581020AJ

Abstract: CXK581020AJ-25 32PIN CXK581020AJ-20 CXK58102QAJ scu32
Contextual Info: SONY CXK581020AJ 131072-words x 8-bits High Speed CMOS Static RAM Description The CXK581020AJ is a high speed CM O S static 32 pin S O J Plastic RAM organized as 131072-words by 8 bits. It operates at 20ns/25ns access time from 5V single power supply. The CXK581020AJ is suitable for use in high

Contextual Info: CXK581020SP/J -35/45/55 SONY 131072-word X 8-bit High Speed CMOS Static RAM Description C X K 5810 20S P /J are 131,072-word x 8 -bit high speed CMOS static RAMs suitable fo r use in high speed and low power applications. Organized as 131,072 words by 8 bits, it

Contextual Info: SONY Ç X K 5 8 1 2 S P / J -35/45/55 131072-word x 8-bit High Speed CM O S Static RAM D escription CXK581020SP 32 pin DIP Plastic C X K 5 8 1 0 2 0 S P /J are 1 3 1 ,0 7 2 -w o rd x 8 -b it high speed CMOS sta tic RAMs suitable fo r use in high speed and low power applications.

CXK581020J

Abstract: sony cxk581020j static ram 2015
Contextual Info: CXK 581020 SP/J SONY 131072-word X -35/45/55 8-bit High Speed CMOS Static RAM Description CXK581020SP 32 pin DIP Plastic CXK581 0 2 0 S P / J are 1 3 1 ,0 7 2 -w o rd x 8 -b it high speed CMOS sta tic RAMs suitable fo r use in high speed and lo w power applications.

Contextual Info: CXK581020SP/J -35/45/55 SONY* 131072-word x 8-bit High Speed CMOS Static RAM D escription C X K 5 8 1 0 2 0 S P /J are CXK581020J 32 pin SOJ Plastic CXK581020SP 32 pin DIP (Plastic) 1 3 1 ,0 7 2 -w o rd X 8 - b it h ig h speed CM OS s ta tic R A M s s u ita b le f o r use

CXK581020A

Abstract: CXK581020AJ-25 SCU032-P-C400-A
Contextual Info: SONY C X K 581020A J • ” *» 131072-words x 8-bits High Speed CMOS Static RAM Description 32 pin SO J Plastic The CXK581020AJ is a high speed CMOS static RAM organized as 131072-words by 8 bits. It operates at 20ns/25ns access time from 5V single power supply.

CXK581020J

Contextual Info: 54E D 0365303 D0D4fl34 11T MSONY «2.3* - / y CXK581020SP/J -35/45/55 SONY 131072-word x 8-bit High Speed CMOS Static RAM S O NY CORP/COMPONENT Description P ROD S C X K 5 8 1 02 0 S P 3 2 pin DIP Plastic C X K 5 8 1 0 2 0 S P /J are 1 3 1 ,0 7 2 -w o rd x 8 -b it

232Z2

Abstract: 109kc
Contextual Info: — “ “ _ ._——— L7C108/109 jtv î;fs incorpüha i - . 12 8K x 8 Static R A M Low Power DESCRIPTION FEATURES □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum

98-LD

Contextual Info: L7C1 n a/m g L 7 C 1 0 3 /1 OS IJbVIÜI-S INuuHHÜKA I H □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □Auto-Powerdown Design □Advanced CMOS Technology □High Speed — to 10 ns maximum □Low Power Operation Active: 570 mW typical at 15 ns

km681001j-20

Abstract: TC55B328J-12 256Kx4 TC55B465J10 TC55B8128J20 PDM41028SA-15SO TC55B8128J-12 TC55328J-20 KM681001J-25 PDM41024S20
Contextual Info: Cross Reference Guide Cross Reference Guide ALLIANCE VS PARADIGM AS7C1024-10TJ AS7C1024-12TJ AS7C1024-15TJ AS7C1024-20TJ AS7C1024L-10TJ AS7C1024L-12TJ AS7C1024L-15TJ AS7C1024L-20TJ AS7C1028-10TJ AS7C1028-12TJ AS7C1028-15TJ AS7C1028-20TJ AS7C1028L-10TJ AS7C1028L-12TJ

Contextual Info: I 7 n in a /in Q v wms _mt — DEVICES INCORPORATED FEATURES 1 0 8 / 1 0 9 128K x 8 Static RAM Low Power DESCRIPTION □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 17 ns maximum

Contextual Info: £ O Q l C D E V IC E S IN C O R P O R A T E D L 7 C 1 0 8 / 1 0 9 128K x 8 Static RAM Low Power ESCRIPTION □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ □ □ □ Auto-Powerdown Design Advanced CMOS Technology High Speed — to 17 ns maximum

a1012L

Contextual Info: L Ö Q IC L7C108/109 128K x 8 Static RA M D E V I C E S INCORHHHATE ' DESCRIPTION FEATURES □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 17 ns maximum □ Low Power Operation

organizational structure samsung

Abstract: NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256
Contextual Info: Static RAM Cross Reference STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 2K 2K X X 32K 8K X e w/CE, OE 8 W/CE1, CE2 X 8 Stow 8 Slow COMPETITIVE VENDOR SH ARP MODEL LH5116 LH5118 LH51256 LH5164A AMD Am9128 Harris CDM6116 Hitachi HM6116A Hyundai HY6116

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

Contextual Info: l o L 7 C 10 8 /10 9 128K x 8 Static RAM g i c D E V IC E S IN C O R P O R A T E D FEATURES DESCRIPTION □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 17 ns maximum

UM61256AK-15

Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE

L7C108WC25

Abstract: MT5C1008 l7c109wi25
Contextual Info: L7C108/109 L7C108/109 DEVICES INCORPORATED 128K x 8 Static RAM Low Power 128K x 8 Static RAM (Low Power) DEVICES INCORPORATED FEATURES DESCRIPTION q 128K x 8 Static RAM with Chip Select Powerdown, Output Enable q Auto-Powerdown Design q Advanced CMOS Technology

L7C108WI15

Abstract: mt5c1008 62L26A
Contextual Info: L7C108/109 L7C108/109 DEVICES INCORPORATED 128K x 8 Static RAM Low Power 128K x 8 Static RAM (Low Power) DEVICES INCORPORATED DESCRIPTION O CE 1 WE OE CE 2 (L7C109 only) ROW SELECT ROW ADDRESS 9 CONTROL consume only 1.5 mW (typical), at 3 V, allowing effective battery backup

Contextual Info: L 7 C 1 0 8 / 1 0 9 128K x 8 Static R A M L o w Power □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 17 ns maximum □ Low Power Operation Active: 550 mW typical at 25 ns

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

K93C46

Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257

TC55B8128

Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6