CXK5826 Search Results

CXK58267AM-10L

Abstract: CXK58267AM-70L CXK58267AM-12L CXK58267AM-85L 70l7 cxk58267
Contextual Info: SONY. CXK58267AM -70LI785LU101LL712LL 32768-word x 8-bit High Speed CMOS Static RAM Description CXK58267AM is 262,144 bits high speed CMOS static RAM organized as 32,768 words by 8 bits and operates from a single 5V supply. The CXK58267AM’s two chip enable inputs are useful for battery back up operation for

Contextual Info: SONY. CXK58267AP/ASP/AM -70LU85Ll3^0LL/12LL 32768-word x 8-bit High Speed CMOS Static RAM Description C X K 5 8 2 6 7 A P /A S P /A M is 262,144 bits high speed CMOS sta tic RAM organized as 32,768 w o rds by 8 b its and operates from a single 5V supply. The C X K 5 8 2 6 7 A P /A S P /A M 's tw o chip

CX58

Abstract: SONY 28 pin SOP Plastic 28-pin static ram CX5 sony sony aa battery
Contextual Info: SONY» CXK58267ATM/AYM -70L L /85L L /10L L yi2L L Advance Information 32768-word X 8-bit High Speed CMOS Static RAM Description C X K 58267A T M /A Y M is a 256K bits, 32768 words by 8 bits, CMOS static RAM. It is suitable fo r portable and battery back-up systems which

Contextual Info: OL/12L SONY. CXK58267ATM/AYM -70LV85L/1 -70LL/85LL71OLL/12LL 32768-word X 8-bit High Speed C M O S Static RAM D escription C X K 582 67A T M /A Y M is a 256K bits, 32768 words by 8 bits, CMOS static RAM. It is suitable fo r portable and battery back-up systems which

Contextual Info: SONY. CXK58267ATM/AYM - 7 0 L U 8 5 u 3 l0 L L /12LL 32768-word x 8-bit High Speed CMOS Static RAM Description C X K 5 8 2 6 7 A T M /A Y M is a 256K bits, 32768 w ords by 8 bits, CMOS sta tic RAM. It is suitable fo r portable and ba tte ry back-up system s w hich

OL10l

Contextual Info: CXK58267AM SONY. -7 0 L /8 5 L /1 0 L /1 2 L -7 0 L U 8 5 L L /1 0 L L y i2 L L 32768-word x 8-bit High Speed CMOS Static RAM D escription C X K 58267A M is 262,14 4 bits high speed C M O S static R A M organized as 3 2 ,768 words by 8 bits and operates from a single 5V supply. Th e C X K 58267A M 's two chip

SONY 28 pin SOP Plastic

Abstract: AM-12L
Contextual Info: SONY. CXK58267AP/ASP/AM -70L/85L/10L/12L -70LL/85LL/1 OLL/12 L L 32768-word x 8-bit High Speed CM OS Static RAM Description C X K 5 8 2 6 7 A P / A S P / A M is 262 ,1 4 4 bits high speed C M O S sta tic R A M organized as 32,76 8 w o rd s by 8 bits and operates from a sin gle 5V

Contextual Info: Sony. CXK58267ATM/AYM -7 0 L /8 5 L /1 0 L /1 2 L 32768-word x 8-bit High Speed CMOS Static RAM D escription C X K 58267A TM /A Y M is a 256K bits, 32768 words by 8 bits, CMOS static RAM. It is suitable for portable and battery back-up systems which require extremely small package and low stand-by

6BS28

Abstract: CEI 23-50 MO-058-AB
Contextual Info: SONY. CXK58267AP/ASP/AM - 7 0 L U 8 5 L l3 ^ 1L L/12LL 32768-word x 8-bit High Speed CMOS Static RAM Description C X K 5 8 2 6 7 A P /A S P /A M is 26 2,144 bits high speed CMOS sta tic RAM organized as 32,768 w ords by 8 b its and operates from a single 5V

Contextual Info: CXK58255AP/AJ s o n y 32768-word X 8 bit High Speed CMOS Static RAM Description C XK58255A P and CXK58255AJ are 262,144 bits high speed CMO S static RAM s organized as 32, 768 words by 8bits and operate from a single 5V supply. These devices are suitable for use in high speed and

Contextual Info: SONY» 7o l / 8 5 L7i o l v i 2L C X K 5 8 2 6 7 A T M /A Y M 32768-word x 8-bit High Speed CMOS Static RAM D e s c rip tio n C X K 5 8 2 6 7 A T M /A Y M is a 2 5 6 K b its , 3 2 7 6 8 w o rd s by 8 b its , CMOS s ta tic R AM . It is su ita b le fo r p o rta b le and b a tte ry back-up syste m s w h ic h

organizational structure samsung

Abstract: NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256
Contextual Info: Static RAM Cross Reference STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 2K 2K X X 32K 8K X e w/CE, OE 8 W/CE1, CE2 X 8 Stow 8 Slow COMPETITIVE VENDOR SH ARP MODEL LH5116 LH5118 LH51256 LH5164A AMD Am9128 Harris CDM6116 Hitachi HM6116A Hyundai HY6116

CXK58266P-101

Abstract: CXK58266P-12L CXK58266P-12LL CXK58266P-15L m5m5255p-10
Contextual Info: 133 - - 2 5 6 K m fe tt £ •¡&mm CC X TAAC «ax ns) TCAC wax (ns) TOE max (ns) CMOS S t a t i c y f- > ? 4 TOH min (ns) TOD max (ns) TWP min (ns) ft TDS tin (ns) RAM ( 3 2 7 6 8 x 8 ) % It TDH TWD (ns) (ns) [ min TWR max (ns) V D O or V C C (V) 2 8 PIN

CXK58257P

Abstract: SONY CX 12LU Sony 187 sony cxk58257m-12l
Contextual Info: SONY CORP/COMPONENT PRODS HTE 1> Ô3Ô2363 CXK58257P/SP/M SONY üüOBb37 5 WSONY 70L/85L/10L/12L 70LL/85LL/10LL/12LL 32768-word X 8 bit High Speed CMOS Static RAM Package Outline Description Unit: mm CXK58257P/SP/M is a 2 6 2 ,1 4 4 bits high speed CMOS static RAM organized as 3 2 ,7 6 8 words by

hm6265

Abstract: SRM2264LC12 SRM2A256SLC70 SRM2A256LC 28-pin SRM2A256LC10 SRM2A256LLC70 SRM2A256SLC SRM2B257SLM70 srm20257lc
Contextual Info: 4-1 Memories Static RAMs CMOS Static RAMs 5V operation P art num ber Pow er C ap acity Qganizafton supply (V) Ambient Operating Standby (mA, Max.) ( f t A, Max.) range OC) Access time (ns, Max.) 85 SRM2264LC90 SR M 2264LCio Current consumption 64K 8KX8