CY6214 Search Results

CY62148

Abstract: CY62148-55 CY62148-70SC CY62148-70ZSC CY62148L-70SC CY62148L-70ZSC ZS32
Contextual Info: fax id: 1079 w CY62148 PRELIMINARY / C Y P R E S S 51 2 Kx 8 Features Static RAM an au tom atic pow er-dow n feature th a t reduces pow er co n ­ sum p tion by m ore tha n 99 % w h en deselected. • 4 .5 V -5 .5 V o peratio n W riting to th e device is accom plished by takin g chip enable

Contextual Info: fax id: 1079 CY62148 PRELIMINARY W / C Y P R E S S _ 512Kx 8 Static RAM Features an automatic power-down feature that reduces power con­ sumption by more than 99% when deselected. • 4 .5V -5.5V operation • CMOS for optimum speed/power • Low active power

CY7C109-VC

Contextual Info: Cypress Semiconductor Qualification Report QTP# 98111 VERSION 2.0 June, 1999 4 Meg SRAM, R42H Technology, Hot Aluminum CY62148 512K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Manager 408 432-7069 Cypress Semiconductor, Inc.

CY62148E

Abstract: CY62148ELL-45ZSXI CY62148B CY62148ELL CY62148ELL-55SXA CY62148ELL-55SXI CY62148e CY62148b
Contextual Info: CY62148E MoBL 4-Mbit 512K x 8 Static RAM Functional Description [1] Features • Very high speed: 45 ns The CY62148E is a high performance CMOS static RAM organized as 512K words by 8 bits. This device features advanced circuit design to provide ultra low active current.

00107

Contextual Info: CY62146E MoBL 4-Mbit 256K x 16 Static RAM Features applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when

CY62148BLL-70SC

Abstract: CY62148B CY62148BLL CY62148BLL-70SI CY62148BLL-70ZC CY62148BLL-70ZRC
Contextual Info: CY62148B MoBL 4-Mbit 512K x 8 Static RAM Features is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. This device has an automatic power-down feature that reduces power consumption by more than 99% when deselected.

CY62143BVLL-70BAI

Contextual Info: 47V CY62143BV MoBL PRELIMINARY 256K x 16 Static RAM Features • Low voltage range: — CY62143BV: 2.7V–3.6V • Ultra-low active, standby power • Automatic power-down when deselected • TTL Compatible inputs and outputs • CMOS for optimum speed/power

32 pin soic 450mil

Abstract: CY62128LL-70SI SOIC 32
Contextual Info: fax id: 1079 W / CYPRESS PRELIMINARY_ CY62148 512 K x 8 Static RAM an automatic power-down feature that reduces power con­ sumption by more than 99% when deselected. Features • 4.5V-5.5V operation • CMOS for optimum speed/power • Low active power

Contextual Info: CY62148V MoBL 512Kx 8 MoBL Static RAM Features • Low voltage range: — 1 .8 V - 3 . • • • • • • Ultra low active power Low standby power _ _ Easy memory expansion with CS- /CS2 and OE features TTL-compatible inputs and outputs Automatic power-down when deselected

Contextual Info: A D V A N C E D CY62146V MoBL TM IN F O R M A T IO N 2 5 6 K x 16 Static RAM disabled BHE, BLE HIGH , or during a write operation (CE LOW, and WE LOW). Features • Low voltage range: -1 .8 V - 3 .3 V • • • • • Ultra low active, standby power Easy memory expansion with CE and OE features

Contextual Info: fax id: 1079 CY62148 512K x 8 Static RAM an automatic power-down feature that reduces power con­ sumption by more than 99% when deselected. Featu res • 4.5V -5.5V operation • CMOS for optimum speed/power • Low active power Writing to the device is accomplished by taking chip enable

CY62148E

Abstract: VFBGA CY62148DV30 CY62148EV30 CY62148EV30LL CY62148EV30LL-45BVXI CY62148EV30LL-45ZSXA CY62148EV30LL-45ZSXI CY62148EV30LL-55SXI
Contextual Info: MoBL CY62148EV30 4-Mbit 512K x 8 Static RAM Features Functional Description The CY62148EV30[2] is a high performance CMOS static RAM organized as 512K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This

Contextual Info: THIS SPEC IS OBSOLETE Spec No: 001-06517 Spec Title: CY62148BN MOBL R 4-MBIT (512K X 8) STATIC RAM Sunset Owner: Anuj Chakrapani (aju) Replaced by: NONE CY62148BN MoBL 4-Mbit (512K x 8) Static RAM Features Functional Description • 4.5V–5.5V operation

ultra fine pitch BGA

Abstract: CY62147CV25 CY62147CV30 CY62147CV33 CY62147V
Contextual Info: 47V CY62147CV25/30/33 MoBL 256K x 16 Static RAM Features cantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected CE HIGH or both BLE and BHE are HIGH . The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are

Contextual Info: CY62146E MoBL 4-Mbit 256K x 16 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH).

Contextual Info: CY62146E MoBL 4-Mbit 256K x 16 Static RAM Features cations such as cellular telephones. The device also has an automatic power down feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when

Contextual Info: CY62147DV18 MoBL2 PRELIMINARY 4 Mb 256K x 16 Static RAM Features • • • • • • • • • mode reducing power consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable

Contextual Info: CY62146EV30 MoBL 4-Mbit 256K x 16 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when

Contextual Info: CY62147CV25/30/33 ADVANCE INFORMATION MoBL 256K x 16 Static RAM are placed in a high-impedance state when: deselected CE HIGH , outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW).

Contextual Info: MoBL CY62148CV25/30/33 ADVANCE INFORMATION MoBL 512K x 8 MoBL Static RAM TM are not toggling. The device can be put into standby mode when deselected CE HIGH . Features Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O

Contextual Info: 1May 7, 2001May 7, 2001*CY62147V MoBL CY62147CV25/30/33 ADVANCE INFORMATION MoBLTM 256K x 16 Static RAM Features and BHE are HIGH. The input/output pins I/O0 through I/O15 are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are

CY62148VLL-70ZI

Abstract: CY62148V CY62148VL-70SI CY62148VL-70ZI CY62148VLL-70BAI CY62148VLL-70SI CY62148VL-70BAI
Contextual Info: MoBL ADVANCED INFORMATION CY62148V MoBL 512K x 8 MoBL Static RAM Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A 0 through A18).

CY62147BV18LL-70BAI

Contextual Info: 47V CY62147BV18 MoBL2 256K x 16 Static RAM Features • Low voltage range: — CY62147BV18: 1.65V–1.95V • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected

Contextual Info: CY62147EV18 MoBL 4-Mbit 256K x 16 Static RAM Features Functional Description • Very high speed: 55 ns ■ Wide voltage range: 1.65 V to 2.25 V ■ Pin compatible with CY62147DV18 ■ Ultra low standby power ❐ Typical standby current: 1 A ❐ Maximum standby current: 7 A