DIODE B4E Search Results

Contextual Info: bEE I> • b4E7SSS □□374S4 fiSM HNECE N E C ELECTRONICS INC _ LASER DIODE MODULE / NDL5717P 1 3 1 0 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DC-PBH LASER DIODE MODULE DESCRIPTION NDL5717P ¡s a 1 310 nm laser diode DIP module w ith singlemode fiber and internal thermo-electric cooler. It is designed fo r a

Contextual Info: 30E D NEC • b4E? 555 OGai Sl l 7 ■ ELECTRONICS INC LA S ER DIODE / NDL5003 1 300 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DOUBLE HETEROSTRUCTURE LASER DIODE DESCRIPTION NDL50Û3 is a long wavelength laser diode especially designed for long distance high capacity transmission systems. The DCPBH Double Channel Planar Buried Heterostructure can achieve stabfe fundamental oscillation in wide temperature range.

1B89

Abstract: RT-70
Contextual Info: N E C ELE CTRONICS INC b5E ]> • b4E7525 00300^1 3QT ■ NECE DATA SHEET NEC PHOTO DIODE N D L 5405L ELECTRON DEVICE 1 0 0 0 t o i 600 nm OPTICAL FIBER COMMUNICATIONS 0 8 0 um InGaAs PIN PHOTO DIODE DESCRIPTION NDL5405L is an InGaAs PIN photo diode with micro lens for a light detector of long wavelength transmission systems. It

NEC K 2500

Abstract: DAD 1000 05611 LD1104 NDL3000 laser diode for printer NEC diode J22686 6W7525
Contextual Info: ST a ^ DE|b4E7525 642 6 427525 Nfcv ODDSt.ll fi N E C TENTATIVE SPEC IFIC ATION ELECTRONICS'INC 59C 05611 7 D T-41-05 LASER DIODE ELECTRON DEVICE NDL3000 D A D ,V D APPLICA TIO N AIGaAs DOUBLE HETEROSTRUCTURE LASER DIODE DESCRIPTION NDL3000 laser diode is developed for DAD Digital Audio Disk , Video Disk optical head and non impact laser printer. The

Contextual Info: bEE D b4E7S2S DÜ37SM7 111 « N E C E N E C ELECTRONICS INC LASER DIODE N D L 5 6 0 0 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP PHASE-SHIFTED DFB DC PBH LASER DIODE DESCRIPTION N D L 5 6 0 0 is a 1 310 nm D F B D istributed Feed-back laser diode especially designed fo r long distance high capacity transm is­

Contextual Info: DATA SHEET NEC PHOTO DIODE NDLS531P Series 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 030 fim InGaAs AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5531P Series is an In G a A s avalanche photo diode module with single mode fiber. It is designed for detectors

cd photo diode

Abstract: NDL5510
Contextual Info: bEE » • b4E75E5 DD37bß^ 251 BNECE N E C ELECTRONICS INC PHOTO DIODE / NDL5510 1 OOO to 1 6 0 0 nm OPTICAL FIBER COMMUNICATIONS <¿80//m InGaAs AVALANCHE PHOTO DIODE DESCRIPTION NDL5510 is an InGaAs Avalanche Photodiode especially designed fo r a detector o f long wavelength optical fib er communica­

LD-7733

Abstract: LD234 IEI-1209 NEC LASER DIODE butterfly package
Contextual Info: N E C b2E D ELECTRONICS INC • b l427S2S OOBflDbS 217 * N E C E PRELIMINARY DATA SHEET LASER DIODE NDL7537P 1 480 nm OPTICAL FIBER COMMUNICATIONS InGaAsP MQW-DC-PBH LASER DIODE MODULE DESCRIPTION NDL7537P is a 1 480 nm pumping laser diode module w ith optical isolator for an Er-doped optical fiber

NDL5407P

Abstract: NDL5407P1 V8580
Contextual Info: N E C ELECTRONICS INC b2E D • b427525 DD3ñDTfi 7b3 ■ NECE DATA SHEET N EC PHOTO DIODE NDL5407P, NDL5407P1 ELECTRON DEVICE 1 OOO to 1 600 nm OPTICAL FIBER COMMUNICATIONS #80 jam InGaAs PIN PHOTO DIODE MODULE WITH MMF NDL5407P and NDL5407P1 are InGaAs PIN photo diode modules with GI-50/125 multimode fiber pigtail. They are designed

Irf 1540 N

Abstract: Irf 1540 G LC7566 Irf 1540 ndl5654p LC-7566 ld2sc
Contextual Info: N E C ELECTRONICS INC bSE D • tjMS7SES GD38Ü20 05R * N E C E DATA SHEET NEC LASER DIODE MODULE NDL5654P ELECTRON DEVICE 1 550 nm OPTICAL FIBER CO M M UNICATIO NS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE MODULE DESCRIPTION NDL5654P is a 1 550 nm phase-shifted DFB Distributed Feed-Back laser diode DIP module with singlemode fiber. It incorpo­

fro 108

Contextual Info: b£E » • b4S7525 0D37S04 553 MNECE_ N E C ELECTRONICS INC LASER DIODE /_ NDL5735PA 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP D C P B H LASER DIODE MODULE DESCRIPTION N D L 5 7 3 5 P A is a 1 310 nm laser diode DIP m odule w ith singlemode fib e r w ith o u t therm o-electric cooler. It incorporates

NDL5653P

Abstract: NDL5600 NDL5600D NDL5600D1 NDL5604P NDL5650 NDL5650D1 NEC LASER DIODE PIN DIP 10 gb laser diode 5b4 diode
Contextual Info: N E C L.2E T> ELECTRONICS INC NEC b4Z7S2S D03ÛD17 5b4 « N E C E PRELIMINARY DATA SHEET LASER DIODE MODULE NDL5653P ELECTRON DEVICE 1 550 nm OPTICAL FIBER COMMUNICATIONS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE MODULE D ES C R IP TIO N N D L5653P is a 1 550 nm phase-shifted DPB Distributed Feed-Back laser diode B utterfly package module with optical isola­

Contextual Info: b2E T> N E C m b4E7SES 0037410 4TT « N E C E ELECTRONICS INC l A S £ R d ,q d e / M q d ULE NDL5720P 1 5 5 0 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DC-PBH LASER DIODE MODULE DESCRIPTION N D L5720P is a 1 550 nm laser diode DIP m odule w ith singlemode fib e r and internal therm o-electric cooler. It is designed fo r a

Optical Detector

Abstract: common cathod PH314 SYM80L
Contextual Info: N E C ELECTRONICS INC 30E D • b427S2S 0 0 2 ^ 2 5 7 ■ T ~'V \ ~ Ç 3 > PHOTO DIODE PH314 SILICON EPITAXIAL PLANAR PIN PHOTO DIODE DETECTOR for DAD, VD PACKAGE DIMENSIONS (Unit : mm 1.8 ± 0.2 1.27 — °MM. ( 0 . 2) “'o.as FEA TU R ES • • • •

Contextual Info: N AUER PHILIPS/DISCRETE bbSB'lBl OQSblB? 336 BA220 b^E D APX Jl GENERAL PURPOSE DIODE Silicon planar epitaxial diode in a DO-35 envelope; intended for general purpose and can also be used as regulator. Q U IC K R E F E R E N C E D A T A Repetitive peak reverse voltage

A940

Abstract: PH302C
Contextual Info: N E C b4S7S2S OOSTbO? 5 3GE D EL EC TRONICS INC r PHOTODIODE G PH302C PLASTIC MOLDED PIN PHOTO DIODE PACKAGE DIMENSIONS DESCRIPTION Unît: mm 7.Z + 0.Z Cl PH302C is a photo diode with PIN structure. It has a wide photo-receiving 2.8 ± 0.2 1 1 area and high speed response enabling applications for various remote

Contextual Info: 3GE D • b>427525 002=1350 T ■ N e'c ELECTRONICS INC T '^ S O P H O T O D IO D E J NDL5102P 1 300 nm OPTICAL FIBER COMMUNICATIONS 0 3 0 jum GERMANIUM AVALANCHE PHOTO DIODE MODULE D ESCRIPTIO N N DL5102P is a Germanium Avalanche Photo diode with singlemode fiber, especially designed for a detector o f long wave*

Contextual Info: N E C ELECTRONICS INC b5E D • b42752S 003Ô07Û T7S H N E C E DATA SHEET |\|E C Z PHOTO DIODE NDL5104P, NDL5104P1 E U C T H O N D E V IC E 1 300 nm OPTICAL FIBER COM M UNICATIONS <t>1 0 0 am G ERM ANIUM AVALAN CH E PHOTO DIODE M OD ULE D E S C R IP T IO N

IMDL5500P

Abstract: NDL5500P avalanche photodiode 1550nm sensitivity avalanche 1550nm photodiode 5 Ghz detector dm-10 avalanche photodiode ingaas ghz
Contextual Info: 30E D • bM5?S25 002T371 2 ■ T - ty - fO S '- N E C ELECTRONICS INC PHOTO DIODE /_ NDL5500P 1 OOO to 1 600 nm OPTICAL FIBER COM M UNICATIONS

MOTOROLA MJW16212

Abstract: MJW16212 MJF16212 MR10150E
Contextual Info: b4E D MOTOROLA fci3ti72S5 D0flb431 TCH SEMICONDUCTOR! IMOT? MO TO RO LA SC D IO DE S / O P T O TECHNICAL DATA Advance Information SCANSWITCH M R 10150E M o to ro la P re ferre d D ev ice Power R ectifier for use as a Dam per Diode in High and Very High Resolution Monitors

73B34

Abstract: NDL7511P1 DIODE on B34 NDL7511 NDL7161 7511P
Contextual Info: NEC ELECTRONICS INC bEE 5 • L427S5S 0 0 3 7 ^ 7 3 b34 H N E C E PRELIMINARY DATA SHEET M F " / / L A S E R D IO D E M O D U L E N D L 7 5 1 1 P , N P L 7 5 11 P 1 InGaAsP MQW-DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION DESCRIPTION NDL7511P and NDL7511P1 are 1 310 nm newly developed Multiple Quantum Well (MQW structure pulsed laser diode

Contextual Info: MBRS410ET3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

MBRS410ET3

Contextual Info: MBRS410ET3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: MBRS410ET3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay