Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 25E D ^53=131 0D20240 T • BUK426-50A BUK426-50B PowerMOS transistor G E N E R A L D E S C R IP T IO N N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in Switched Mode Power Supplies
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0D20240
BUK426-50A
BUK426-50B
BUK426
0Q2QE44
1E-02
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100-P
Abstract: BUK446 BUK446-800A BUK446-800B transistor SE 431 ha 431 transistor
Text: PHI LI P S I N T E R N A T I O N A L bSE D Kl 7 1 1 0 Ô S b Ü O b M Ol b E4S H P H I N Philips Semiconductors Product Specification BUK446-800A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.
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711002b
BUK446-800A/B
-SOT186
BUK446
-800A
-800B
7110a2b
100-P
BUK446-800A
BUK446-800B
transistor SE 431
ha 431 transistor
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ld2sc
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchWIOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has
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BUK9514-55
T0220AB
ld2sc
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BUK436
Abstract: BUK436-200B 200B iran BUK436-200A
Text: Philips Components BUK436-200A BUK436-200B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Pow er Supplies SM PS , motor control, welding,
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BUK436-200A
BUK436-200B
BUK436
-200A
-200B
OT-93;
M89-1144/RST
BUK436-200B
200B
iran
BUK436-200A
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BUK445
Abstract: BUK445-60A BUK445-60B IT48
Text: PHILIPS INTER NAT IONAL bSE ]> B 7H0fl2b 0Db3Tflb TOT • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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BUK445-60A/B
-SOT186
DS/V-12/
ID/100
BUK445
BUK445-60A
BUK445-60B
IT48
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK455-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,
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BUK455-60A/B
BUK475-60A/B
BUK475
OT186A
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BUK456
Abstract: 100-C BUK456-200A BUK456-200B T0220AB
Text: Philips Components BUK456-200A BUK456-200B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK456-200A
BUK456-200B
BUK456
-200A
-200B
M89-1168/RC
100-C
BUK456-200A
BUK456-200B
T0220AB
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V10-40 diode philips
Abstract: V10-40 diode D02G BUK445-450B C25F SL 100 power transistor
Text: N AMER PHILIPS/DISCRETE 25E D • bbSBTBl 0G204QS S ■ PowerMOS transistor BUK445-450B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies
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bbS3T31
0G204QS
BUK445-450B
V10-40 diode philips
V10-40 diode
D02G
BUK445-450B
C25F
SL 100 power transistor
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BUK455-60A
Abstract: K455-60A BUK455-60B diode d2s BUK455 T0220AB k455
Text: N AMER PHILIPS/DISCRETE LTE D ^53^31 □□3Db4Q TTl HiAPX Product Specification Philips Semiconductors B U K455-60A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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Q03DLi40
K455-60A/B
T0220AB
BUK455
BUK455-60A
K455-60A
BUK455-60B
diode d2s
T0220AB
k455
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Untitled
Abstract: No abstract text available
Text: bbS3=l31 0030475 4 SSE D N AMER PHI LIP S/DISCRETE BUK454-600A BUK454-600B PowerMOS transistor T - 37 - 1 1 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUK454-600A
BUK454-600B
BUK454
-600A
-600B
T-39-n
IE-04
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BUK454-450B
Abstract: T0220AB
Text: N AMER PHILIPS/DIS CRET E 2SE D • ^53=131 00204b5 1 ■ PowerMOS transistor BUK454-450B r - 3 7 - GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUK454-450B
T0220AB;
T0220AB
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diode h5e
Abstract: BUK552 BUK552-50A BUK552-50B T0220AB
Text: N AMER P H I L I P S / D I S C R E T E E5E D MÊ t,b53T31 O O S O b a S 2 m PowerMOS transistor Logic Level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-eftect power transistor in a plastic envelope. The device is intended for use in
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BUK552-50A
BUK552-50B
T-39-/Ã
BUK552
diode h5e
T0220AB
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistors PHP6ND50E, PHB6ND50E FREDFET, Avalanche energy rated_ FEATURES • • • • • • SYMBOL QUICK REFERENCE DATA V,D SS Repetitive Avalanche Rated Fast switching
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PHP6ND50E,
PHB6ND50E
PHB6ND50E
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Automotive applications, Switched
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BUK545-60H
OT186
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