DIODE FR 153 Search Results

BC237

Abstract: MMBV2107 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode BAV74LT1 ANODE 1 3 CATHODE 2 ANODE 3 1 MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 50 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1)

5v3 tube

Abstract: 5v3 rectifier TUBE 5v3 general electric I960 rs tube
Contextual Info: 5V3 ET-T1630 5V3 5-60 TWIN DIODE P â d fr * * TUBES Page 1 FOR FULL-WAVE POWER RECTIFIER APPLICATIONS = DESCRIPTION AND RATING“ The 5V3 is a filamentary twin diode designed for use as a full-wave rectifier in the power supply of color television receivers or other equipment that has

BAS16HT1

Abstract: A6 marking diode Diode marking CODE UF SOD
Contextual Info: BAS16HT1 Preferred Device Switching Diode MAXIMUM RATINGS Symbol Value Unit Continuous Reverse Voltage Rating VR 75 Vdc Peak Forward Current IF 200 mAdc IFM surge 500 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board (Note 1) TA = 25°C

marking code 5a sot-363

Abstract: BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Diode MMBD6050LT1 3 3 CATHODE 1 ANODE 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1)

BC237

Abstract: SOT-363 marking jf sot363 marking qs
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Diode BAL99LT1 ANODE 3 CATHODE 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit Continuous Reverse Voltage VR 70 Vdc Peak Forward Current IF 100 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board 1 TA = 25°C

MMDL6050T1

Contextual Info: MMDL6050T1 Switching Diode MAXIMUM RATINGS Symbol Value Unit Continuous Reverse Voltage Rating VR 70 Vdc Peak Forward Current IF 200 mAdc IFM surge 500 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board (Note 1) TA = 25°C Derate above 25°C

BC237

Abstract: A6 TSOP-6 MARKING SOT 23-3 marking code a6 diode
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Diode BAS16LT1 3 CATHODE 1 ANODE Motorola Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1)

BC237

Abstract: MPS9
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Switching Diode BAW56WT1 Motorola Preferred Device CATHODE 1 3 ANODE 2 3 MAXIMUM RATINGS TA = 25°C Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1)

motorola 5118 user manual

Abstract: BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diodes MMBD2837LT1 MMBD2838LT1 ANODE 1 3 CATHODE 2 ANODE 3 MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit VRM 75 Vdc VR 30 50 Vdc IFM 450 300 mAdc IO 150 100 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1)

diode bas32

Contextual Info: BAS32 _ HIGH-SPEED SILICON DIODE FOR SURFACE MOUNTING The BAS32 is a planar epitaxial high-speed diode designed fo r fast logic applications.

BAV70

Abstract: BAV70TT1 BAV70TT1G
Contextual Info: BAV70TT1 Preferred Device Dual Switching Diode Features • Pb−Free Package May be Available.* The G−Suffix Denotes a Pb−Free Lead Finish http://onsemi.com ANODE 1 MAXIMUM RATINGS TA = 25°C Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current

E3P303

Abstract: 279-87 NTMSD3P303R2
Contextual Info: NTMSD3P303R2 FETKY P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Efficiency Components in a Single SO−8 Package • High Density Power MOSFET with Low RDS on , http://onsemi.com Schottky Diode with Low VF

E3P102

Abstract: NTMSD3P102R2
Contextual Info: NTMSD3P102R2 FETKY P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Efficiency Components in a Single SO−8 Package • High Density Power MOSFET with Low RDS on , http://onsemi.com Schottky Diode with Low VF

BAW56TT1

Abstract: BAW56TT1G
Contextual Info: BAW56TT1 Preferred Device Dual Switching Diode Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS TA = 25°C Rating Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit 225 1.8

Contextual Info: NTMSD3P303R2 FETKY P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Efficiency Components in a Single SO−8 Package • High Density Power MOSFET with Low RDS on , • • • • http://onsemi.com MOSFET

E3P303

Abstract: NTMSD3P303R2 NTMSD3P303R2G
Contextual Info: NTMSD3P303R2 FETKY P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Efficiency Components in a Single SO−8 Package • High Density Power MOSFET with Low RDS on , • • • • http://onsemi.com MOSFET

Contextual Info: u n ite d * „ m o n o lith ic sem ico n d u cto rs « »A " : / nU m h h n n CHMl 190 «9V K Band Mixer . GaAs Monolithic Microwave IC t Description The CHM1190 is a balanced Schottky diode mixer based on a six quarter wave ring structure. It could be use in receiver or

Contextual Info: BAV99WT1, BAV99RWT1 Preferred Devices Dual Series Switching Diodes The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Features • Pb−Free Package is Available http://onsemi.com Suggested Applications • • • • • ANODE 1 ESD Protection

Contextual Info: u n ited m o n o lith ic sem ico n du ctors « » *„ : nuM H H n-i C H M l 191 r K Band Mixer . GaAs Monolithic Microwave IC t Description The CHM1191 is a balanced Schottky diode mixer based on a six quarter wave ring structure. It could be use in receiver or

BAV99WT1G

Abstract: BAV99LT1 BAV99RWT1 BAV99RWT1G BAV99WT1
Contextual Info: BAV99WT1, BAV99RWT1 Preferred Devices Dual Series Switching Diodes The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Features • Pb−Free Packages are Available http://onsemi.com Suggested Applications • • • • • ANODE 1 ESD Protection

sot75

Abstract: BAS16TT1 BAS16TT1G BAW62 SOT-75
Contextual Info: BAS16TT1 Preferred Device Silicon Switching Diode Features • Pb−Free Package is Available* http://onsemi.com MAXIMUM RATINGS TA = 25°C Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IF 200 mA IFM(surge) 500 mA Symbol

VITA-57

Contextual Info: DEMO MANUAL DC1532 LTC2268-14/-12, LTC2267-14/-12, LTC2266-14/-12, LTC2265-14/-12, LTC2264-14/-12, LTC2263-14/-12 12-/14-Bit, 25Msps to 125Msps Dual ADCs Description Demonstration circuit 1532 supports a family of 14-/12bit 25Msps to 125Msps ADCs. Each assembly features

Js MARKING CODE SOT23

Contextual Info: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT−23 Features 3 1 CATHODE ANODE

MARKING JS sot-23

Abstract: BAS19 BAS19LT1 BAS19LT3 BAS20 BAS20LT1 BAS21 BAS21DW5T1 BAS21LT1 BAS21LT1G
Contextual Info: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT−23 Features 3 1 CATHODE ANODE