DIODE S04 Search Results

diode F 82 bp

Abstract: DIODE BP ZF8.2 EC10QSO ZF-8.2 Zf12 smd zener bp ZF24 ZF30 Q05CT
Contextual Info: QUANTUM MARKETING INTERNATIONA* a n Nihon Inter Electronics Corporation AUTHORIZED AGENT Case Style Type Circuit E C 10DS1 EC10DS2 EC10DS4 EC10DS6 R ectifier Diode D 64 lo V FM (A) (V) 1.0 1.1 .55 EC10Q S03 EC10QSO_4 Schottky Barrier Diode (S.B.D.) Single C hip

1N3595

Abstract: AM-08
Contextual Info: L ALLEGRO M ICROSYSTEM S INC □S0433Ö 0 GD 3 7 Û Ô 3 • ALGR T-91-Û1 PROCESS TRR Process TRR Medium-Speed Switching Diode Process TRR is a non-gold-doped silicon epitaxial diode designed to 1N3595 specifications and used in medium-speed switching applications.

CMS-S040-020

Contextual Info: CMS-S040-020 SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size A : 1.016 * 1.016 mm 2 Bond Pad size(B) : 0.889 * 0.889 mm 2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag

CMS-S040-040

Contextual Info: CMS-S040-040 SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size A : 1.016 * 1.016 mm 2 Bond Pad size(B) : 0.889 * 0.889 mm 2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag

9909

Abstract: CMS-S040-040L
Contextual Info: CMS-S040-040L SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size A : 1.016 * 1.016 mm 2 Bond Pad size(B) : 0.889 * 0.889 mm 2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag

B047

Abstract: diode b047 tv black/white vr-22k edi r diode BS1-B047
Contextual Info: ELECTRONIC AN A M E R IC A N ELECTRO N IC C O M P O N E N T S C O M P A N Y a i GRAY OAKS AVENUE • YONKERS. NEW YORK -10710 914-965-4400 • FAX 914-9B5-5531 • TELEX BS1-S047 MINIATURE HIGH VOLTAGE FAST RECOVERY SILICON DIODE FOR T.V. APPLICATIONS TYPE - TR 22

ci 4502

Abstract: ECT180
Contextual Info: 4A 35V Tjw150V 7¿Zfr n íZ h FSQS04A035 Fully Molded similar to TO-220AC ttfl» Nihon Inter Electronics Corporation Specification. Construction '> 3 * Schottky Barrier Diode Application High Frequency Rectification I I MAXIMUM RATINGS Ta=25cC: Unless otherwise specified

Contextual Info: diode terminator networks EU features • • • • • • Fast reverse recovery time Fast turn on time Low capacitance SMD packages 16 kV IEC61000-4-2 capable Products with lead-free terminations meet EU RoHS and China RoHS requirements dimensions and construction

Diodo Schottky

Abstract: DIODO
Contextual Info: 4A 65VT»150t Fully Molded similar to TO-220AC FSQS04A065 ttfl« 0 * ^ Nihon Inter Electronics Corporation Specification. lie 'S3 y Construction f f lìÉ Application h K ' 7 ? ' 4 Schottky Barrier Diode High Frequency Rectification MAXIMUM RATINGS Ta=25cC Unless otherwise specified

S06 SMD

Abstract: DIODE s04 a n08 SMD smd code dn N08 sot23 ht q20 DNA 20 PINS CODE DIODE s04 S03 SMD
Contextual Info: resistors DN X diode terminator network EU features • • • • Fast reverse recovery time • Fast turn on time Low capacitance • SMD packages 16 kV IEC61000-4-2 capable Products with lead-free terminations meet EU RoHS and China RoHS requirements

N08 sot23

Abstract: S06 SMD 16kv diode n08 SMD
Contextual Info: diode terminator network EU features • • • • • • Fast reverse recovery time Fast turn on time Low capacitance SMD packages 16 kV IEC61000-4-2 capable Products with lead-free terminations meet EU RoHS and China RoHS requirements dimensions and construction

S0424

Abstract: Si4837DY
Contextual Info: Si4837DY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) D TrenchFETr Power MOSFET D LITTLE FOOT Plust Schottky ID (A) 0.020 @ VGS = –10 V 8.3 0.030 @ VGS = –4.5 V 6.8

DIODE s04 a

Abstract: smd code dn S06 SMD SMD Transistor 1f n08 SMD DIODE s04
Contextual Info: 1733 Reader's Spreadspg189-328:1570 Reader's Spreadspg189-328 1/27/09 4:44 PM Page 5 PMS 300 neg. Black neg. DN X diode terminator network EU features circuit protection • • • • Fast reverse recovery time • Fast turn on time Low capacitance • SMD packages

s04a

Abstract: LM2665 LP2980-3 so4a LM266X so4a marking
Contextual Info: LM2665 Switched Capacitor Voltage Converter General Description Features The LM2665 CMOS charge-pump voltage converter operates as a voltage doubler for an input voltage in the range of +2.5V to +5.5V. Two low cost capacitors and a diode needed during start-up are used in this circuit to provide up

Si4814DY

Contextual Info: Si4814DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 rDS(on) (W) ID (A) 0.021 @ VGS = 10 V 7.0 0.0325 @ VGS = 4.5 V 5.6 0.020 @ VGS = 10 V 7.4 0.0265 @ VGS = 4.5 V 8.4 FEATURES

Contextual Info: VN10KC Vishay Siliconix New Product N-Channel 60-V D-S MOSFET , VA PRODUCT SUMMARY V (BR)DSS M in (V) *DS(on) M a x (£2) VGS(th )(V ) Id (A) 60 5 e v GS = io v 0.8 to 2.5 0.31 FEATURES BENEFITS APPLICATIONS • • Zener Diode Input Protected Low O n-Resistance: 3 Q

13lt 01 g

Abstract: 13lt SUB50P05-13LT
Contextual Info: SUB50P05-13LT Vishay Siliconix P-Channel 55-V D-S MOSFET with Sensing Diode PRODUCT SUMMARY V(BR)DSS (V) –55 rDS(on) (W) ID (A) 0.0135 @ VGS = –10 V –50a 0.019 @ VGS = –4.5 V –50a S D2PAK-5L T1 D1 G D2 T2 1 2 3 4 5 D G D T1 P-Channel MOSFET S T2

marking JB SCHOTTKY BARRIER DIODE

Contextual Info: 4A45VTjw150V ~>3 -y h * —<•<! F S Q S 0 4 A 0 4 5 f f l iÉ Application Fully Molded similar to TÖ-220AC 0 * ^ t t « * Specification. Nihon Inter Electronics Corporation y T y 4 Hr— K '> 3 -y h Construction F Schottky Barrier Dkxie Schottky Barrier Diode

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX

453 optocoupler

Abstract: Transistor 2TY SOT230
Contextual Info: Product specification Philips Semiconductors CNX62A High-voltage optocoupler 3UALITY TECHNOLOGIES CORP 57E D 74bb051 0004570 S04 • Ö T V FEATURES • High current transfer ratio and a low saturation voltage, making the devices suitable for use with TTL integrated circuits

Contextual Info: STP80NS04Z N - CHANNEL CLAMPED 7.5mG - 80A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE STP 80N S04Z V dss R d S o ii Id CLAM PED <0.008 Q. 80 A . TYPICAL RDs(on) = 0.0075 £2 . 100% AVALANCHE TESTED . LOW CAPACITANCE AND GATE CHARGE . 175 °C MAXIMUM JUNCTION

Contextual Info: STP60NS04Z N - CHANNEL CLAMPED 10m£2 - 60A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE STP60N S04Z V R d S o ii Id <0.015 Q. 60 A dss CLAM PED . TYPICAL Ros(on) =0.010 Î2 . 100% AVALANCHE TESTED . LOW CAPACITANCE AND GATE CHARGE . 175 °C MAXIMUM JUNCTION

Contextual Info: STP60NS04Z N - CHANNEL CLAMPED 10m ^ - 60A - T0-220 FULLY PROTECTED MESH OVERLAY MOSFET PRELIMINARY DATA TYPE STP60N S04Z V dss R dS oii Id CLAM PED < 0 .0 1 5 Q. 60 A . . TYPICAL RDS(on) =0.010 £2 100% AVALANCHE TESTED . LOW CAPACITANCE AND GATE CHARGE

Contextual Info: STP80NS04Z N - CHANNEL CLAMPED 7.5mQ - 80A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE STP80N S04Z . . . . V ds s RDS on Id CLAM PED < 0 .0 0 8 Q 80 A TYPICAL RDS(on) = 0.0075 Î2 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175 °C MAXIMUM JUNCTION