DIODE SY 351 Search Results

diode sy 345

Abstract: diode SY 192 sd 339 sy 320 diode SD 338 SY 345 KT 829 b k3451 KT 828 A SD337
Contextual Info: SERVICE-MITTEILUNGEN V E B R F T I N D U S T R I E V E R T R I E B R U N D F U N K UND F E R N S E H E N t B i n n a |r a d i o - t e l e v i s i o n I Ausgobe 1-2 _ _ Febr. 89 1-7 Mitteilung aus dam VEB RFT IV RuF Leipzig, Organisation Plan der Inventurtermine Ersatztell/sroßhandel 1989

BUK455-400B

Abstract: T0220AB
Contextual Info: N ACIER P H I L I P S / D I S C R E T E b^E D • bhSBTBl 0D3GbS5 3 1 2 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Diode KD 514

Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Contextual Info: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381

VK334V

Abstract: diode sy 715 VK332E tabela varistor VK334Y 220v ac solenoid valve VKF334-G-01 ozono VK332W "DIODE" SY 171
Contextual Info: 3 Port Direct Operated Poppet Solenoid Valve Rubber Seal Series VK300 Model Universal porting Valve Model Available for N.C. valve, N.O. valve, divider valve, selector valve, etc. Nl/min: 196 Compact/Width 18 X Length 63 mm Low consumption 4W DC (Standard)

SYJ3120-5G-M3-Q

Abstract: DXT170-71-1 SYJ3000-14-6 VJ7000 VJ3000-13-1 SYJ3000-21-2A-Q SYJ3000-21-1A-Q diode sy 166 SYJ5143-5LOU-Q SY100-30-4A
Contextual Info: 4, 5 Port Solenoid Valve Rubber Seal Series SYJ3000/5000/7000 SV Low power consumption: 0.5W Without light SY (Current draw: 21mA at 24V DC) SYJ Bright colour tone and state of the art design SX VK VZ VF VFR VP7 VQC SQ VQ VQ4 VQ5 VQZ VQD Completely interchangeable with

BUK442

Abstract: BUK442-60A BUK442-60B 1e47
Contextual Info: 7 ^ 3 9 - 0 ? Philips Components Data sheet status Preliminary specification d ate of issue March 1991 PHILIPS PowerMOS transistor SbE T> INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent m ode field-effect pow er transistor in a lastic full-pack envelope,

SMC - SY5120

Abstract: SMC SY313 omron G71-OD16 SY7120 G71-OD16 SY340 431a1 diode sy GVVZS3000-21A-2 19n marking 2 pin diode
Contextual Info: High Capacity & Simple Choices Series SY 5 Port Rubber Seal Solenoid Valve SV SY SYJ SX VK VZ VF VFR VP7 VQC SQ VQ VQ4 VQ5 VQZ VQD VFS VS VS7 VQ7 Series SY9000 newly realased 1.2-1 CE Marking Compliant Products The SY series complies with the EMC Directive and the Low Energy Directive based

Halbleiterbauelemente DDR

Abstract: sy 170 diode sy-180 diode sy 171 10 diode sy-170 mikroelektronik DDR mikroelektronik Heft 12 VEB mikroelektronik SY 180 Applikation Information
Contextual Info: m o ß ^ t s ie le l- c ia n o r ill- i Information Applikation INFORMATION A PPLIKA TIO N M IK R O E L E K T R O N IK Heft 16: L E IS T U N G S -E L E K T R O N IK II Bauelemente-Sortiment der DDR -Teil 1: Dioden- VEB GLEICHRICHTERWERK STAHNSDORF im VEB Kombinat Mikroelektronik

TRANSISTOR 132-gd

Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes
Contextual Info: Vergleichsliste Halbleiter Bauelemente In h a lt: Einleitung Typenbezeichnung und Form elzeichen G e g e n ü b e r s t e ll u n g n a c h A l p h a b e t : T ransistoren G leichrichterdioden Leistungs-Zenerdioden V e rg le ic h nach T y p e n g ru p p e n

Diode SY 345

Abstract: STR F 6234 VEB mikroelektronik TRANSISTOR KT 837 mikroelektronik RFT STRALSUND RFT KB 100 Mitteilung VEB RFT EY500 aiwa tpr
Contextual Info: SERVICE-MITTEILUNGEN VEB RFT I N D U S T R I E V E R T R I E B RUNDFUNK UND FER N SE H EN ¡RimnM l r a d io - t e / e v is io n | Ausgabe 1988 9-11 Seite 1 - 12 1. Mitteilung aus dem VEB RFT Industrievertrieb RuF Leipzig, Bereich S Raduga 726/730 - Neues Äquivalent für den Hochspannungsgleich­

GP 809 DIODE

Abstract: BUZ,271
Contextual Info: SIEMENS BUZ 271 SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Type BU Z 271 Vos -50 V b -22 A flbsion Package Ordering Code 0.15 n TO-220 A B C67078-S1453-A2 Maximum Ratings Parameter Symbol Continuous drain current Values

smc vt301

Abstract: diode P033 breather valve VT317V solenoid direction control valve connection 220v ac 220v ac solenoid valve L146 DXT060-51-13 varister symbol VT307E
Contextual Info: 3 Port Direct Operated Poppet Rubber Seal Series VT307 Model Large Flow Capacity, yet Compact Size. Dimensions W X H X D •·····30 X 54.5 X 33 VT307······Nl/min 206.02 or more, 1/4 Low Power Consumption VT/VO307······4.8W DC/Standard Style

transistor buz 311

Abstract: Buz 304 C67078-S1305-A4 T-150 diode sy 104 SIEMENS mcx
Contextual Info: SIEMENS BUZ 40 B SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 40 B Vds 500 V Id 8.5 A flDS on 0.8 n Package Ordering Code TO-220 AB C67078-S1305-A4 Maximum Ratings Parameter Symbol Values Continuous drain current

FESS 006

Abstract: 351-07 A1307 C67078-A1307-A5 M20D buz 353 siemens 350 98 O
Contextual Info: SIEMENS BUZ 50 C SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 50 C Vbs 1000 V b wDS on Package Ordering Code 2.3 A 6Q TO-220 AB C67078-A1307-A5 Maximum Ratings Parameter Symbol Drain source voltage Vtis Drain-gate voltage ^DGR Values

PC 014

Contextual Info: SIEMENS BUZ 12 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 12 Vbs 50 V b 42 A RoS on Package Ordering Code 0.028 n TO-220 AB C67078-S1331-A2 Maximum Ratings Parameter Symbol Continuous drain current

VEB mikroelektronik

Abstract: "Mikroelektronik" Heft GWS servo VEB Kombinat zf filter lm 7803 3V Positive Voltage Regulator E355D "halbleiterwerk frankfurt" mikroelektronik Heft U706D VQB71
Contextual Info: H albleiter-B auelem ente Semiconductors D ie vorliegend e Übersicht en th ält in g ed rä n g te r Form d ie wichtigsten G renz- und Kenn­ d aten d e r in d er D D R g efertigten H a lb le ite rb au e le m e n te . Dem A n w en der soll durch diese Übersicht die Auswahl der jew eils in Frage kom menden

5mo 365 r

Abstract: SY5000-26-1A-Q 68705 SX3140-5LOZ-Q VVQ1000-51A-C8 dxt170-75-1 SY3000-11-14 SX3120 diode sx34 PH ON 823 m 8833
Contextual Info: 5 Port Solenoid Valve Rubber Seal Series SX All pilot valves are located on the same side of the manifold. Pilot valves single & double solenoid on one side permit not only a reduction in the size of the valve but also a single wiring direction. In addition, this

Contextual Info: N ANER PHILIPS/DISCRETE LTE D bbS3S31 DD30Mfl0 70b « A P X Product Specification Philips Semiconductors BUK437-400B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in

Contextual Info: Philips Sem iconductors Data Com m unications Products Product specification Transimpedance amplifier 280MHz DESCRIPTION NE5210 PIN CONFIGURATION The NE5210 is a 7kQ transim pedance wide band, low noise am plifier with differential outputs, particularly suitable fo r signal

876-1421

Contextual Info: > O LmFmiTY M i c- K o T he I n f i n i t e P h i h c: i o whr of k o I N i . n n o H s Transient I mmune Undervoltage Sensing P roducti on v a t i o n KEY DESCRIPTION Circuit D ata FEATURES FULLY CHARACTERIZED, TRANSIENT IMMUNE INPUT STAGE (See Product Highlight

Contextual Info: 2: 22 AM TSE Nx160 ASSP Telecom Standard Product Data Sheet Released Au g es da y, 03 TSE Nx160 us t, 20 04 11 :0 PM5376 Data Sheet Proprietary and Confidential Released Issue No. 7: July 2004 Do wn lo ad ed by Sa nj iv Sh ar m ao fR SB SY ST EM S on Tu BIT SLICED TRANSMISSION SWITCH

diode L2

Contextual Info: MG30V2YS40 U n i t in m m HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • T h e E le c tro d e s a r e I s o la te d from C a se. • H ig h I n p u t Im p e d a n c e • I n c lu d e s a C o m p le te H a l f B rid g e in O ne Package.

CCIR601

Abstract: CCIR656 TMC2192 y736 diode MARKING cbn FR17 diode ST163E
Contextual Info: www.cadeka.com TMC2192 10 Bit Encoder Features • Multiple input formats – 20 bit CCIR601 – 10 bit CCIR656 – 10 bit Digital Composite • Synchronization modes – Master – Slave – Genlock – CCIR656 • Subcarrier modes – Free-run – Subcarrier reset

bd-9a

Abstract: led matrix 8 8 one colour ST-163E ph-12 diode TIP 317 data sheet CCIR601 CCIR656 TMC2192 FR17 diode
Contextual Info: www.fairchildsemi.com TMC2192 10 Bit Encoder Features Programmable color space matrix 8:8:8 video reconstruction Three 10 bit D/A’s with independent trim Individual power down modes for each D/A Multiple output formats – S-video – Composite – Digital composite output