DIP32PIN Search Results

SRM20100LRM70

Contextual Info: SRM20100l_7o/85/io CMOS 1M-BIT STATIC RAM • Low Supply Current • Access Time 70ns/85ns/100ns • 131,072 Words x 8-Bit Asynchronous DESCRIPTION The SRM201 OOI_7o/85/ic is a 131,072 words x 8-bit asynchronous, static, random access memory on a monolithic

ba7254s

Abstract: BA7254 lem lt 100 p TMR head preamplifier 8215m
Contextual Info: RO HM CO LTD , MDE 7 f l s a cm oocm ^cn b H R H N BA7254S VTRffl IC /IC s for VTR Applications " 7 ^ 7 7 -2 / BA7254 X 4 v * \ s > 7 ° Switchless Video Signal P B /R E C Amplifier #fl2'tfj£l§!/D im ensions U n it: mm BA7254sti, v r n m m m ± y > y x %

BA7212S

Abstract: BA7244S BA721 BRHH BA7253 BA7254 BA7212 BA7244BS ba7244 BA7252S
Contextual Info: ROHM CO' L T D . * 4DE D H 7826*^*1 0004^00 VTRJS C /IC s for VTR Applications BA7212S ' B^T2i T BIR H II x -r y * 7^ 77-2/ \y 7 . Switchless Video Signal PB/REC Amplifier * vfiiiS /D im ensions (U n it: mm BA7212S(i, V T R ffiH » m & 7 > T C r 2 ^ - y K G » *

UPD444C

Abstract: SRM2264LC10 hm6116 SRM2264LCT10
Contextual Info: Short Form Matrix Static Memory Line-Up The static nature of the memory requires no external clock or refreshing circuit and its very low power consumption makes it ideal for applications requiring non-volatile storage with back-up batteries. S-MOS Systems, Inc. •150 RlverOaks Parkway • San Jose, CA 95134 *Tel: 408 922-0200 • Fax: (408) 922-0238

ba7765as

Abstract: 1511V BA7767AS BA7767
Contextual Info: VTR ffl I C / IC s for VTR Applications ROHM CO L T D _ BA7765AS/BA7766AS/BA7767AS 4DE D B 7 a 2 f l em 000SQ4T =] B B R H f l • BA7765AS/2A7735AS Normal Audio Signal Processings 7 ^ 7 7 -2 1 • i'fJfévfìiiSi/D im en sio ns Unit : mm BA7765AS/BA7766AS/BA7767AS ( i , VTR J - 7 )\, t r '< ifflC M S & è i i / d l ^ M a i C T ' t o

SOP48

Abstract: CF RM sot89 SOP38 14X14X2 epson QFP 216 14X14X1 45x45 mm bga 14X20X2 14x14x2.7 QFP13
Contextual Info: Plastic QFP Pin Count 44 46 48 52 60 64 80 100 120 128 144 160 176 184 208 216 232 240 256 304 Package code QFP 13 QFP4 QFP2 QFP6 QFP5 QFP12 QFP5 QFP6 QFP2 QFP6 QFP5 QFP13 QFP15 QFP6 QFP5 Plastic TQFP Body size mm 10X10X1.4 10X10X1.45 14X14X2 14X14X2.7 14X20X2.7

SOP6

Abstract: sop6 package SRM20100LMT SRM20116
Contextual Info: Memories 4-1 Static RAMs EE PROMs. Memory Device Documentation Memories Static RAMs Part number Power Capacity Oigarizabon supply V Current consumption Operating Standby (mA, Max.) (/¿A, Max.) Ambient Access temperature tiine Fange (ns, Max.) . (t) Additional

BA7767AS

Abstract: BA7766AS BA7765AS ba7767 7x53 BA7765 MEQ1
Contextual Info: VTR ffl IC /IC s for VTR Applications ROHM CO LTD _ BA7765AS/BA7766AS/BA7767AS 4DE D B 7 a 2 f l em 000SQ4T =] B B R H f l • BA7765AS/2A7735AS Normal Audio Signal Processings 7 ^ 7 7 -2 1 • i'fJfévfüiSi/Dim ensions Unit : mm BA7765AS/BA7766AS/BA7767AS ( i , VTR J - 7

SRM20100LC

Abstract: SRM20100LC70 SRM20100LC-70 SRM20100LC85 A14C SRM20100LC10 epson ea-d
Contextual Info: SEIKO EPSON CORP. PF463-04 SRM20100LC70/ 85/10 CMOS 1M-BIT STATIC RAM •L o w Supply Current •Access Time 70ns/85ns/100ns •131,072 Words X 8-Bit Asynchronous I DESCRIPTION The SRM20100LC7o/85/io is an 131,072 wordsx 8-bit asynchronous, static, random access memory on a monolithic

SRM20100LMT

Abstract: A12E SRM20100LMT85 A16E SRM20100LRMT SRM20100LMT10 SRM20100LTMT A11E 5 pin A13E a13e
Contextual Info: P F 638-03 SRM201OOLMT70/85/10 1 M-Bit Static RAM • • • • Industrial Tem perature Range Low Supply Current Access Time 70ns/85ns/1 OOns 131,072 W ordsx8-B it Asynchronous • DESCRIPTION The SRM201OOLMT70/85/10 is an 131,072 w ordsx8-bit asynchronous, static, random access memory on a

SRM20100LLM70

Abstract: srm20100ll SRM20100LLM SRM20100LLM10 SRM20100LLM85 SRM20100LLTM jc 100A1 EPSON timing 2045J
Contextual Info: EPSON P F 6 1 9 -0 4 SRM201 O O LLM 70/85/10 1 M-Bit Static RAM • E x tr e m e ly Low S ta n d b y C urre n t •A c c e s s Tim e 70 ns/8 5n s/1 0 0 n s • 1 3 1 ,0 7 2 W o rd s x 8 -B it A s y n ch ro n o u s DESCRIPTION The SRM201OOLLM 7 0 /8 5 /1 0 is an 131,072 w ordsx8-bit asynchronous, static, random access memory on a

upd444c

Abstract: SRM2016C12 SRM2264LC10 SRM2264lm10 SRM2B256SLMX55 SRM20100LRMT85 SRM2016C-12 SRM2016C SRM2264LCT10 SRM20100LMT
Contextual Info: 1997 DATABOOK SRAM PRODUCTS 000-97-MEM-1.0 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: 408 922-0200 • Fax: (408) 922-0238 1 THIS PAGE INTENTIONALLY BLANK 2 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: (408) 922-0200 • Fax: (408) 922-0238

BA7244BS

Abstract: ba7244 ic chip 7727 vtr 150
Contextual Info: ROHM CO LTD * 7 f l 2 a im MDE 0004^13 VTR ffl IC /IC s for VTR Applications B A 7 2 • RHM BA7244BS ' x 8 < "j 9 \y* if r t m 7 ^ 7 7 -2 / - > -? Switchless Video Signal Playback/ Record Amplifier * 12/'Dimensions U nit: mm BA7244BS l£, VTR fflg 3 ii/H £ 7 7> 7 T 't o 4 ^ 7 KIC

S1D56240D0A0

Abstract: s1d15400f00 smd diode f54 TF019-19 SVM7560 S1D13806F00A S1D13A05B00B S1D15600T00B S1D15600T26A SED1560T0B
Contextual Info: TF019-19 CMOS LSIs Product Catalog 2001/2002 Product Catalog Product Catalog ELECTRONIC DEVICES MARKETING DIVISION 2001/2002 Electronic devices information on WWW server This catalog was made with recycle paper, and printed using soy-based inks Revised March 2001

Contextual Info: SRM2 0 1 0 0 L70/85/10 CMOS 1M-BIT STATIC RAM • Low Supply Current • Access Time 70ns/85ns/100ns • 131,072 Words x 8-Bit Asynchronous • DESCRIPTION The SRM20100L70/85/10 is a 131,072 words x 8-bit asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring

hm6265

Abstract: SRM2264LC12 SRM2A256SLC70 SRM2A256LC 28-pin SRM2A256LC10 SRM2A256LLC70 SRM2A256SLC SRM2B257SLM70 srm20257lc
Contextual Info: 4-1 Memories Static RAMs CMOS Static RAMs 5V operation P art num ber Pow er C ap acity Qganizafton supply (V) Ambient Operating Standby (mA, Max.) ( f t A, Max.) range OC) Access time (ns, Max.) 85 SRM2264LC90 SR M 2264LCio Current consumption 64K 8KX8