upd444c
Abstract: SRM2016C12 SRM2264LC10 SRM2264lm10 SRM2B256SLMX55 SRM20100LRMT85 SRM2016C-12 SRM2016C SRM2264LCT10 SRM20100LMT
Text: 1997 DATABOOK SRAM PRODUCTS 000-97-MEM-1.0 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: 408 922-0200 • Fax: (408) 922-0238 1 THIS PAGE INTENTIONALLY BLANK 2 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: (408) 922-0200 • Fax: (408) 922-0238
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000-97-MEM-1
SRM2016C10/12
16K-Bit
SRM2016C/MT12
SRM2264L10/12
64K-Bit
-44pin-R1
81max
upd444c
SRM2016C12
SRM2264LC10
SRM2264lm10
SRM2B256SLMX55
SRM20100LRMT85
SRM2016C-12
SRM2016C
SRM2264LCT10
SRM20100LMT
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S1D56240D0A0
Abstract: s1d15400f00 smd diode f54 TF019-19 SVM7560 S1D13806F00A S1D13A05B00B S1D15600T00B S1D15600T26A SED1560T0B
Text: TF019-19 CMOS LSIs Product Catalog 2001/2002 Product Catalog Product Catalog ELECTRONIC DEVICES MARKETING DIVISION 2001/2002 Electronic devices information on WWW server This catalog was made with recycle paper, and printed using soy-based inks Revised March 2001
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TF019-19
S1L60000
S1L50000
S1L35000
S1L30000
S1L9000F
S1D56240D0A0
s1d15400f00
smd diode f54
TF019-19
SVM7560
S1D13806F00A
S1D13A05B00B
S1D15600T00B
S1D15600T26A
SED1560T0B
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SRM20100LRM70
Abstract: No abstract text available
Text: SRM20100l_7o/85/io CMOS 1M-BIT STATIC RAM • Low Supply Current • Access Time 70ns/85ns/100ns • 131,072 Words x 8-Bit Asynchronous DESCRIPTION The SRM201 OOI_7o/85/ic is a 131,072 words x 8-bit asynchronous, static, random access memory on a monolithic
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SRM20100l_
70ns/85ns/100ns
SRM201
7o/85/ic
SRM20100L
SRM20100L85.
SRM20100Lio.
SRM20100L70/85/10
SRM201OOL70/85/1
OP6-32pin
SRM20100LRM70
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ba7254s
Abstract: BA7254 lem lt 100 p TMR head preamplifier 8215m
Text: RO HM CO LTD , MDE 7 f l s a cm oocm ^cn b H R H N BA7254S VTRffl IC /IC s for VTR Applications " 7 ^ 7 7 -2 / BA7254 X 4 v * \ s > 7 ° Switchless Video Signal P B /R E C Amplifier #fl2'tfj£l§!/D im ensions U n it: mm BA7254sti, v r n m m m ± y > y x %
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BA7254
BA7254S
BA7254S
629kHz
10mAp
100kHz
24pln
BA7254SH,
BA7254
lem lt 100 p
TMR head preamplifier
8215m
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BA7212S
Abstract: BA7244S BA721 BRHH BA7253 BA7254 BA7212 BA7244BS ba7244 BA7252S
Text: ROHM CO' L T D . * 4DE D H 7826*^*1 0004^00 VTRJS C /IC s for VTR Applications BA7212S ' B^T2i T BIR H II x -r y * 7^ 77-2/ \y 7 . Switchless Video Signal PB/REC Amplifier * vfiiiS /D im ensions (U n it: mm BA7212S(i, V T R ffiH » m & 7 > T C r 2 ^ - y K G » *
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BA721
BA7212S
T-77-2Ã
BA7212SIÃ
BA7212S
30mAp
30nlAp
629kHz
10mAP
BA7244S
BA721
BRHH
BA7253
BA7254
BA7212
BA7244BS
ba7244
BA7252S
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UPD444C
Abstract: SRM2264LC10 hm6116 SRM2264LCT10
Text: Short Form Matrix Static Memory Line-Up The static nature of the memory requires no external clock or refreshing circuit and its very low power consumption makes it ideal for applications requiring non-volatile storage with back-up batteries. S-MOS Systems, Inc. •150 RlverOaks Parkway • San Jose, CA 95134 *Tel: 408 922-0200 • Fax: (408) 922-0238
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DIP-24pin
OP2-24pin
DIP-24pln
OP-24pin
DIP-28pin
OP-28pin
UPD444C
SRM2264LC10
hm6116
SRM2264LCT10
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ba7765as
Abstract: 1511V BA7767AS BA7767
Text: VTR ffl I C / IC s for VTR Applications ROHM CO L T D _ BA7765AS/BA7766AS/BA7767AS 4DE D B 7 a 2 f l em 000SQ4T =] B B R H f l • BA7765AS/2A7735AS Normal Audio Signal Processings 7 ^ 7 7 -2 1 • i'fJfévfìiiSi/D im en sio ns Unit : mm BA7765AS/BA7766AS/BA7767AS ( i , VTR J - 7 )\, t r '< ifflC M S & è i i / d l ^ M a i C T ' t o
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BA7765AS/BA7766AS/BA7767AS
000SQ4T
BA7765AS/2A7735AS
DIP32pin
BA7765AS/BA7766AS
0DQ5057
T-77-21
ba7765as
1511V
BA7767AS
BA7767
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SOP48
Abstract: CF RM sot89 SOP38 14X14X2 epson QFP 216 14X14X1 45x45 mm bga 14X20X2 14x14x2.7 QFP13
Text: Plastic QFP Pin Count 44 46 48 52 60 64 80 100 120 128 144 160 176 184 208 216 232 240 256 304 Package code QFP 13 QFP4 QFP2 QFP6 QFP5 QFP12 QFP5 QFP6 QFP2 QFP6 QFP5 QFP13 QFP15 QFP6 QFP5 Plastic TQFP Body size mm 10X10X1.4 10X10X1.45 14X14X2 14X14X2.7 14X20X2.7
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QFP12
QFP13
QFP15
QFP14
12X12X1
14X20X2
14X14X1
SOP48
CF RM sot89
SOP38
14X14X2
epson QFP 216
45x45 mm bga
14x14x2.7
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SOP6
Abstract: sop6 package SRM20100LMT SRM20116
Text: Memories 4-1 Static RAMs EE PROMs. Memory Device Documentation Memories Static RAMs Part number Power Capacity Oigarizabon supply V Current consumption Operating Standby (mA, Max.) (/¿A, Max.) Ambient Access temperature tiine Fange (ns, Max.) . (t) Additional
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SRM20100LMT70
SRM20100LM
SRM20100LMTio
SRM20V100LLMT?
DIP-32pin,
OP6-32pin
-32pin
-32pin-R1
SOP6
sop6 package
SRM20100LMT
SRM20116
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BA7767AS
Abstract: BA7766AS BA7765AS ba7767 7x53 BA7765 MEQ1
Text: VTR ffl IC /IC s for VTR Applications ROHM CO LTD _ BA7765AS/BA7766AS/BA7767AS 4DE D B 7 a 2 f l em 000SQ4T =] B B R H f l • BA7765AS/2A7735AS Normal Audio Signal Processings 7 ^ 7 7 -2 1 • i'fJfévfüiSi/Dim ensions Unit : mm BA7765AS/BA7766AS/BA7767AS ( i , VTR J - 7
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BA7765AS/BA7766AS/BA7767AS
BA7785AS/iÃ
DIP32pin
122dBV
x-77-21
BA7765AS/BA7766AS
BA7767AS
BA7767AS
BA7766AS
BA7765AS
ba7767
7x53
BA7765
MEQ1
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SRM20100LC
Abstract: SRM20100LC70 SRM20100LC-70 SRM20100LC85 A14C SRM20100LC10 epson ea-d
Text: SEIKO EPSON CORP. PF463-04 SRM20100LC70/ 85/10 CMOS 1M-BIT STATIC RAM •L o w Supply Current •Access Time 70ns/85ns/100ns •131,072 Words X 8-Bit Asynchronous I DESCRIPTION The SRM20100LC7o/85/io is an 131,072 wordsx 8-bit asynchronous, static, random access memory on a monolithic
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PF463-04
SRM20100LC
70ns/85ns/100ns
SRM20100LC70/85/io
SRM2OIOOLC70
SRM201
SRM20100LC
SRM20100LC70
SRM20100LC-70
SRM20100LC85
A14C
SRM20100LC10
epson ea-d
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SRM20100LMT
Abstract: A12E SRM20100LMT85 A16E SRM20100LRMT SRM20100LMT10 SRM20100LTMT A11E 5 pin A13E a13e
Text: P F 638-03 SRM201OOLMT70/85/10 1 M-Bit Static RAM • • • • Industrial Tem perature Range Low Supply Current Access Time 70ns/85ns/1 OOns 131,072 W ordsx8-B it Asynchronous • DESCRIPTION The SRM201OOLMT70/85/10 is an 131,072 w ordsx8-bit asynchronous, static, random access memory on a
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PF638-03
SRM201OOLMT70
70ns/85ns/1
SRM201OOLMT70/85/10
SRM20100LMT
A12E
SRM20100LMT85
A16E
SRM20100LRMT
SRM20100LMT10
SRM20100LTMT
A11E
5 pin A13E
a13e
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SRM20100LLM70
Abstract: srm20100ll SRM20100LLM SRM20100LLM10 SRM20100LLM85 SRM20100LLTM jc 100A1 EPSON timing 2045J
Text: EPSON P F 6 1 9 -0 4 SRM201 O O LLM 70/85/10 1 M-Bit Static RAM • E x tr e m e ly Low S ta n d b y C urre n t •A c c e s s Tim e 70 ns/8 5n s/1 0 0 n s • 1 3 1 ,0 7 2 W o rd s x 8 -B it A s y n ch ro n o u s DESCRIPTION The SRM201OOLLM 7 0 /8 5 /1 0 is an 131,072 w ordsx8-bit asynchronous, static, random access memory on a
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PF619-04
SRM201OOLLM70
70ns/85ns/100ns
SRM201OOLLM70/85/10
SRM201
OOLLM70
SRM20100LLM85
SRM20100LLM70
srm20100ll
SRM20100LLM
SRM20100LLM10
SRM20100LLTM
jc 100A1
EPSON timing
2045J
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BA7244BS
Abstract: ba7244 ic chip 7727 vtr 150
Text: ROHM CO LTD * 7 f l 2 a im MDE 0004^13 VTR ffl IC /IC s for VTR Applications B A 7 2 • RHM BA7244BS ' x 8 < "j 9 \y* if r t m 7 ^ 7 7 -2 / - > -? Switchless Video Signal Playback/ Record Amplifier * 12/'Dimensions U nit: mm BA7244BS l£, VTR fflg 3 ii/H £ 7 7> 7 T 't o 4 ^ 7 KIC
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BA7244BS
BA7244BS
24pin)
23ptn
16pinÃ
T-77-27
27pin)
27pln
ba7244
ic chip 7727
vtr 150
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Untitled
Abstract: No abstract text available
Text: SRM2 0 1 0 0 L70/85/10 CMOS 1M-BIT STATIC RAM • Low Supply Current • Access Time 70ns/85ns/100ns • 131,072 Words x 8-Bit Asynchronous • DESCRIPTION The SRM20100L70/85/10 is a 131,072 words x 8-bit asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring
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70ns/85ns/100ns
SRM20100L70/85/10
SRM20100L70
000-97-MEM-1
SRM20100L70/85/10
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hm6265
Abstract: SRM2264LC12 SRM2A256SLC70 SRM2A256LC 28-pin SRM2A256LC10 SRM2A256LLC70 SRM2A256SLC SRM2B257SLM70 srm20257lc
Text: 4-1 Memories Static RAMs CMOS Static RAMs 5V operation P art num ber Pow er C ap acity Qganizafton supply (V) Ambient Operating Standby (mA, Max.) ( f t A, Max.) range OC) Access time (ns, Max.) 85 SRM2264LC90 SR M 2264LCio Current consumption 64K 8KX8
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SRM2264LC90
2264LCio
SRM2264LC12
SRM2A256LC/0
SRM2A256LCB5
SRM2A256LC10
SRM2A256LLC70
SRM2A256LLC85
SRM2A256LLC10
SRM2A256SLC70
hm6265
SRM2A256LC
28-pin
SRM2A256SLC
SRM2B257SLM70
srm20257lc
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