DS1106 Search Results

Contextual Info: RFHA1101D Proposed 4.3W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB

Contextual Info: RF5325 3.3V, 2.4GHZ 802.11b/g/n WIFI FRONT END MODULE   C_TX C_BT BT 13 Integrated 2.5GHz b/g/n Amplifier, SP3T Switch, Power Detector Coupler Single Supply Voltage 3.0V to 4.5V POUT =18dBm, 11g, OFDM @ <4% EVM, 20dBm 11b Meeting 11b Spectral Mask 12 GND

Contextual Info: RF3857 DUAL CHANNEL LNA WITH BYPASS MODE   N/C VREF2 13 GAIN SEL1 1 Low Noise and High Intercept Point Adjustable Bias Current Power Down Control Low Insertion Loss Bypass Feature 1.8V to 4V Operation See “Bias Note” on Page 3 0.9GHz to 4.0GHz Operation

Contextual Info: RF5722 3.0V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Features        VC1 RF IN 1 Single Power Supply 3.0V to 3.6V 24dB Minimum Gain Input Matched to 50 2400MHz to 2500MHz Frequency Range +18dBm at <2.5% typ EVM, 120mA at 3.3VCC

SPF5189Z

Abstract: SPF5189
Contextual Info: SPF5189Z SPF5189Z 50MHz to 4000MHz, GaAs pHEMT Low Noise MMIC Amplifier 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER Product Description Features The SPF5189Z is a high performance pHEMT MMIC LNA designed for operation from 50MHz to 4000MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations. The SPF5189Z offers ultra-low noise figure and high linearity

psf-s01-00

Contextual Info: RFDA0045 RFDA0045Digital Controlled Variable Gain Amplifier DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 10MHZ TO 850MHZ Features      Applications  Transceiver IF DVA  Cellular, PCS, GSM, UMTS  Wireless Data, Satellite Terminals DATA

Contextual Info: SXB4089Z SXB4089Z 400MHz to 2500MHz ½W Medium Power InGap/GaAs HBT Amplifier 400MHz to 2500MHz ½W MEDIUM POWER InGaP/GaAs HBT AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SXB4089Z amplifier is a high efficiency InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost, surface-mountable

Contextual Info: AM / FM RADIO TRANSMITTER KEYFOBS Highly Secure Protocol 1 – 3 Switch Options Led Indication Of Transmission Directly Compatible With Keeloq Decoder Power Saving Auto Shut Off Feature Automatically Transmits Battery Low Condition. User Customisable Housing

Contextual Info: RF5112 3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Features  Single Power Supply 3.0V to 5.0V  +23dBm, <4%EVM, 250mA at VCC =5.0V  +21dBm, <4.0%EVM, 185mA atVCC =3.3V  28dB Typical Small Signal Gain  50 Input and Interstage Matching

Contextual Info: RF5125 3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Features Single Power Supply 3.0V to 5.0V 28dB Typical Small Signal Gain  50 Input and Interstage Matching  2400MHz to 2500MHz Frequency Range  +23dBm, <4%EVM, 250mA at VCC =5.0V NC VC1 NC

Contextual Info: RF2172 ISM BAND 3.6V, 250mW AMP WITH ANALOG GAIN CONTROL       BluetoothTM PA 2.4GHz to 2.5GHz ISM Band Systems 902MHz to 928MHz ISM Band Systems 3.6V Spread-Spectrum Cordless Phones Portable Battery-Powered Equipment Spread-Spectrum Systems

Contextual Info: RF5355 3.3V, 5GHz LINEAR POWER AMPLIFIER VC2 VC3 Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.45mm 8 7 Features    Input Match Interstage Match      IEEE802.11a/n and IEEE802.16e Applications HyperLAN WiFi Systems Commercial and Consumer

Contextual Info: RF5521 3.3V, SWITCH AND LNA FRONT END MODULE Package Style: QFN, 10-pin, 1.75mmx1.75mmx0.5mm C_B T 10 Features    Single Supply Voltage 3.0V to 4.5V Integrated SP3T Switch and LNA with Bypass Typical gain is 12dB and 2.0dB NF in RX Mode Pin-toPin

Contextual Info: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =39dBm, and P1dB =25.5dBm. This RF

Contextual Info: RF5565 3.3V, 2.4GHz 802.11b/g/n WiFi FRONT END MODULE Features 2   VCC VCC N/C 12 N /C 11 GND S P3T RX OUT 3 10 ANT LN A V D D 4 9 C BT 5 6 7 8 BT IEEE802.11b/g/n WiFi 2.5GHz ISM Band Solutions Portable Battery-Powered Equipment 13 2 Fo Filter Applications

switch 11g 140

Contextual Info: RF5388 3.3V, DUAL-BAND FRONT-END MODULE Features     RX_g GND GND SW2 31 LNA VCC 1 Single-Module Radio FrontEnd Single Supply Voltage 3.0V to 3.6V Integrated 2.5GHz & 5GHZ PA’s, Diplexers, Filters & Switches for TX & RX POUT =18dBm, 11g, OFDM a

wifi RECEIVER CIRCUIT DIAGRAM

Abstract: wifi 2.4ghz DETECTOR CIRCUIT DIAGRAM
Contextual Info: RF5765 2.4GHz 802.11b/g/n WiFi FRONT-END MODULE Features    Integrated 2.4GHz b/g/n Amplifier, LNA, SP3T Switch, and Power Detector Coupler Single Supply Voltage 3.0V to 4.8V POUT =20dBm, 11g, OFDM at <4% EVM, 23dBm 11b Meeting 11b Spectral Mask Tx In

Contextual Info: SXB4089Z SXB4089Z 400MHz to 2500MHz ½W Medium Power InGap/GaAs HBT Amplifier 400MHz to 2500MHz ½W MEDIUM POWER InGaP/GaAs HBT AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SXB4089Z amplifier is a high efficiency InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost, surface-mountable

RF6650

Abstract: LQM2HPN2R2MG0L material declaration taiyo yuden smps dc-dc circuits Material Declaration MURATA
Contextual Info: RF6650 POWER MANAGEMENT IC Package: 8-Bump WLCSP, 3x3 Array, 1.58mm x1.57mm Features          VPWR C3 A1 RF6650 AGND High Efficiency >95% Transient Response <25s 650mA Load Current Capability Programmable Output Voltage Bypass FET

power-22D

Contextual Info: RF6575 3.3V, 2.4GHz FRONT END MODULE Features   TX Output Power=22dBm TX Gain: 28dB GND NC VBat VBat NC Package Style: QFN, 20-Pin, 3.5mmx3.5mmx0.5mm 15 14 13 12 11 GND 16 10 VB GND 17 9 GND RF_COM 18 8 ANT1 GND 19 7 GND 20 6 ANT2 LNA_VCC 1 2 3 4 5 GND

SGA9289Z

Abstract: MARKING P2Z SGA-9289z SGA9289ZSR rf transistor MARKING CODE 016 marking code of sot89 transistor J4-87 transistor J9
Contextual Info: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9289Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =42.5dBm, and P1dB =27.5dBm. This

wifi amplifier circuit diagram

Abstract: rf3482tr7 RF3482SR bidirectional wifi amplifier DS1106
Contextual Info: RF3482 3.6V, SINGLE-BAND FRONT END MODULE      RXBP GND ANT 12 BTH SW GND 2 11 RX SW BT 3 10 TX SW PAEN 4 9 VB 6 7 8 PDET 5 PABC Single Module Radio Front End Single Voltage Supply 3.0V to 4.8V Integrated 2.5GHz b/g/n Amplifier, RX Balun and

Contextual Info: RF5122 3V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC VC1 Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.6mm 8 7 Features    RF IN 1 6 VC2 Input Match     IEEE802.11b/g/n WiFi Applications 2.5GHz ISM Band Applications Commercial and Consumer

transistor 2.4GHz amplifier schematic

Abstract: transistor 2.4GHz amplifier schematic wifi RF5373 JESD22-115A RF5373PCK-410 High linear output power for IEEE802.11b, class g power amplifier schematic
Contextual Info: RF5373 1.8V TO 3.6V IEEE802.11b/g/n AND BLUETOOTH DRIVER/AMPLIFIER    8 7 RF IN 1 6 N/C Very Low Current see table for all modes Bias >5dBm 11g POUT @<1% and 10dBm 11g POUT @<4% DET N/C 2 5 RF OUT POUT =19dBm Meeting Class 1 BT Gain: 28dB Typ 11b/g/BT